High-reliability discrete products and engineering services since 1977 2N4199-2N4204 SILICON CONTROLLED RECTIFIER FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Rating Symbol Value Unit VRRM 50 Volts VDRM 300 400 500 600 700 800 Volts ITRM 100 Amps Peak Reverse Blocking Voltage, Note 1 (TJ = 105°C) Peak Forward Blocking Voltage, Note 1 (TC = 105°C) 2N4199 2N4200 2N4201 2N4202 2N4203 2N4204 Repetitive Peak On-State Current (PW = 3 µs, Duty Cycle = 0.6%, TC = 85°C) Continuous On-State Current (TC = 65°C) IT 5 Amps Current Application Rate, Note 2 di/dt 5000 A/µs Peak Forward Gate Power PGFM 20 Watt Average Forward Gate Power PGF(AV) 1 Watt Peak Forward Gate Current IGFM 5 Amps Peak Gate Voltage – Forward Reverse, Note 3 VGFM VGRM 10 10 Volts Operating Junction Temperature Range Blocking State Conducting State TJ -65 to +105 -65 to +200 Storage Temperature Range Tstg -65 to +200 °C - 15 In. lb. RӨJC 3 °C/W Stud Torque Thermal resistance, junction to case °C Note 1: Characterized for unilateral applications where reverse blocking capability is not important. V DRM and VRRM may be applied as a continuous dc voltage for zero or negative gate voltage but positive gate voltage must not be applied concurrently with a negative potential on the anode. When checking blocking capability, do not permit the applied voltage to exceed the rated voltage. Note 2: Minimum Gate Trigger Pulse: IG = 200 mA, PW = 1 µs, tr = 20 ns. Note 3: Do not reverse bias gate during forward conduction if anode current exceeds 10 amperes. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Characteristics Symbol Min Max Unit IDRM, IRRM - 2 mA Gate Trigger Current (Continuous dc) (Anode Voltage = 7 Vdc, RL = 100 ohms, TC = 25°C) (Anode Voltage = 7 Vdc, RL = 100 ohms, TC = -65°C) IGT - 50 100 mA Gate Trigger Voltage (Continuous dc) (Anode Voltage = rated VDRM, RL = 100 ohms, TC = 105°C) (Anode Voltage = 7 Vdc, RL = 100 ohms, TC = 25°C) (Anode Voltage = 7 Vdc, RL = 100 ohms, TC = -65°C) VGT 0.2 - 1.5 2 Peak Forward or Reverse Blocking Current (Rated VDRM or VRRM, gate open) TC = 105°C) Volts Rev. 20150604 High-reliability discrete products and engineering services since 1977 2N4199-2N4204 SILICON CONTROLLED RECTIFIER Symbol Min Max Unit Holding Current (Anode Voltage = 7 Vdc, gate open, TC = 105°C) Characteristics IH 3 - mA Forward “on” Voltage (ITM = 5 Adc, PW = 1 ms max, Duty Cycle ≤ 1%) VTM 2.6 - Volts Dynamic Forward “on” Voltage (0.5 µs after 50% decay point on dynamic forward voltage waveform) Forward Current: 30 A pulse Gate Pulse: at 200 mA, PW = 1 µs, tr = 20 ns VTM - 25 Volts td tr - 200 200 150 130 100 tq - 20 µs dv/dt 250 - V/µs Turn-on Time ITM = 30 A Delay Time Rise Time All Types 2N4199 & 2N4200 2N4201 2N4202 2N4203 & 2N4204 Pulse Turn-off Time Test Conditions: PFN discharge; Forward Current = 30 A pulse; Reverse Current = 5 A, TC = 85°C, dv/dt = 250V/µs to Rated VDRM; Reverse Anode Voltage during turn-off interval = 0 V; Reverse gate bias during turn-off interval = 6 V Forward Voltage Application Rate (Linear Rise of Voltage) (TC = 105°, gate open, VD = Rated VDRM ns Rev. 20150604 High-reliability discrete products and engineering services since 1977 2N4199-2N4204 SILICON CONTROLLED RECTIFIER MECHANICAL CHARACTERISTICS Case TO-64 Marking Alpha-numeric Pin out See below Rev. 20150604 High-reliability discrete products and engineering services since 1977 2N4199-2N4204 SILICON CONTROLLED RECTIFIER Rev. 20150604 High-reliability discrete products and engineering services since 1977 2N4199-2N4204 SILICON CONTROLLED RECTIFIER Rev. 20150604