High-reliability discrete products and engineering services since 1977 2N6167-2N6170 SILICON CONTROLLED RECTIFIER FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Symbol Value Peak forward and reverse blocking voltage (1) (TJ = -40 to 100°C) 2N6167 2N6168 2N6169 2N6170 Rating VDRM VRRM 100 200 400 600 Peak non-repetitive reverse blocking voltage (t ≤ 5ms) 2N6167 2N6168 2N6169 2N6170 VRSM Average forward current (TC = -40 to +65°C) (85°C) IT(AV) 13 6.5 Amps Peak surge current (1 cycle, 60Hz, TC = 65°C) (1.5ms pulse @ TJ = 100°C) Preceded and followed by no current or voltage ITSM 240 560 Amps Circuit fusing (TJ = -40 to +100°C, t = 8.3ms) I2t 235 A2s Peak gate power PGM 5 Watts Average gate power PG(AV) 0.5 Watts IGM 2 Amps Operating junction temperature range TJ -40 to 100 °C Storage temperature range Tstg -40 to 150 °C 30 In. lb. RӨJC 1.5 °C/W Forward peak gate current Stud torque Thermal resistance, junction to case 150 250 450 650 Unit Volts Volts Note 1: Ratings apply for zero or negative gate voltage. Devices shall not have a positive bias applied to the gate concurrently with a negative potential on the anode. Devices should not be tested with a constant source for forward or reverse blocking capability such that the voltage applied exceeds the rated blocking voltage. Rev. 20150306 High-reliability discrete products and engineering services since 1977 2N6167-2N6170 SILICON CONTROLLED RECTIFIER ELECTRICAL CHARACTERSITICS (TA = 25°C unless otherwise specified) Characteristic Symbol Min Typ Max Unit - 1 1 1 1 2.0 2.5 3.0 4.0 mA mA mA mA - - 10 µA - 1.5 1.7 OFF CHARACTERISTICS Peak repetitive forward or reverse blocking current (Rated VDRM or VRRM, gate open, TC = 100°C) 2N6167 2N6168 2N6169 2N6170 (Rated VDRM or VRRM, gate open, TC = 25°C) All devices Peak forward on-state voltage (ITM = 41A peak) IDRM, IRRM VTM Gate trigger current (continuous dc) (VD = 12Vdc, RL = 24Ω) TC = -40°C TC = 25°C IGT Gate trigger voltage (continuous dc) (VD = 12Vdc, RL = 24Ω) TC = -40°C TC = 25°C VGT Holding current (VD = 12Vdc, gate open, IT = 200mA) TC = -40°C TC = 25°C IH Turn-on time (ITM = 41A, VD = rated VDRM, IGT = 200mA, rise time ≤ 0.05µs, pulse width = 10µs) ton Turn-off time (ITM = 10A, IR = 10A) (ITM = 10A, IR = 10A, TJ = 100°C) toff Forward voltage application rate (TJ = 100°C, VD = Rated VDRM) Volts mA - 2.1 75 40 Volts - 0.8 0.63 2.5 1.6 mA - 3.5 90 50 - - 1 - 25 40 - - 50 - µs µs dv/dt V/µs Rev. 20150306 High-reliability discrete products and engineering services since 1977 2N6167-2N6170 SILICON CONTROLLED RECTIFIER MECHANICAL CHARACTERISTICS Case TO-48 ISO Marking Alpha-numeric Pin out See below Rev. 20150306