High-reliability discrete products and engineering services since 1977 2N6394-2N6399 SILICON CONTROLLED RECTIFIERS FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Rating Peak repetitive forward and reverse blocking voltage(1) (TJ = -40 to +125°C, sine wave, 50 to 60 Hz, gate open) 2N6394 2N6395 2N6397 2N6399 On state RMS current (180° conduction angles, TC = 90°C) Symbol Value Unit 50 100 400 800 VRRM, VDRM IT(RMS) Volts Amps 12 Peak non-repetitive surge current (1/2 cycle, 60Hz, sine wave, TJ = 90°C) ITSM Circuit fusing considerations (t = 8.3ms) I2t 40 A2s Forward peak gate power (pulse width ≤ 1.0µs, TC = 90◌ۜ°C) PGM 20 Watts Forward average gate power (t = 8.3ms, TC = 90°C) Amps 100 PG(AV) 0.5 Watts Forward peak gate current (pulse width ≤ 1.0µs, TC = 90◌ۜ°C) IGM 2 Amps Operating junction temperature range TJ -40 to +125 °C Storage temperature range Tstg -40 to +150 °C Note 1: VDRM and VRRM for all types can be applied on a continuous basis without incurring damage. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. THERMAL CHARACTERISTICS Characteristic Thermal resistance, junction to case Symbol Maximum Unit RӨJC 2.0 °C/W TL 260 °C Maximum lead temperature for soldering purposes 1/8” from case for 10 seconds ELECTRICAL CHARACTERISTICS (TC = 25°C) Characteristic Symbol Min. Typ. Max. Unit - - 10 2.0 µA mA - 1.7 2.2 - 5.0 30 OFF CHARACTERISTICS Peak forward or reverse blocking current (VAK = Rated VDRM or VRRM, gate open) TJ = 25°C TJ = 100°C IDRM or IRRM ON CHARACTERISTICS Peak forward on-state voltage (2) (ITM = 24A peak) VTM Gate trigger current (continuous dc) (VD = 12 Vdc, RL = 100 Ω) IGT Rev. 20130117 Volts mA High-reliability discrete products and engineering services since 1977 2N6394-2N6399 SILICON CONTROLLED RECTIFIERS ELECTRICAL CHARACTERISTICS (TC = 25°C) Characteristic Symbol Min. Typ. Max. - 0.7 1.5 0.2 - - - 6.0 50 - 1.0 2.0 - 15 35 - - 50 - Unit OFF CHARACTERISTICS Gate trigger voltage (continuous dc) (VD = 12 Vdc, RL = 100 Ω) VGT Gate non-trigger voltage (VD = 12 Vdc, RL = 100 Ω, T J = 125°C) VGD Holding current (VD = 12Vdc, initiating current = 200mA, gate open) IH Turn on time (ITM = 12A, IGT = 40mAdc, VD = rated VDRM) tgt Turn-off time (VD = rated VDRM) (ITM = 12A, IR = 12A) (ITM = 12A, IR = 12A, TJ = 125°C) tq Volts Volts mA µs µs DYNAMIC CHARACTERISTICS Critical rate of rise of off-state voltage exponential (VD = rated VDRM, TJ = 125°C) dv/dt V/µs Note 2: Pulse test: Pulse width ≤ 300µs, duty cycle ≤ 2%. MECHANICAL CHARACTERISTICS Case: TO-220AB Marking: Body painted, alpha-numeric Pin out: See below Rev. 20130117 High-reliability discrete products and engineering services since 1977 2N6394-2N6399 SILICON CONTROLLED RECTIFIERS Rev. 20130117 High-reliability discrete products and engineering services since 1977 2N6394-2N6399 SILICON CONTROLLED RECTIFIERS Rev. 20130117 High-reliability discrete products and engineering services since 1977 2N6394-2N6399 SILICON CONTROLLED RECTIFIERS Rev. 20130117