ROHM QST5TR

QST5
Transistors
Low frequency amplifier
QST5
zExternal dimensions (Unit : mm)
zApplication
Low frequency amplifier
Driver
2.8
Collector current
Power dissipation
Junction temperature
Range of storage temperature
(3)
2.9
(2)
0.16
0.85
1pin mark
Each lead has same dimensions
ROHM : TSMT6
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Limits
−30
−30
−6
−2
−4
500
1.25
150
−55 to +150
Abbreviated symbol : T05
zEquivalent circuit
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
(1)
(6)
zFeatures
1) A collector current is large.
2) VCE(sat) : max. −370mV
At lc= −1.5A / lB= −75mA
(5)
0.4
(4)
1.6
Unit
V
V
V
A
A
mW
W
°C
°C
(6)
(5)
(4)
(1)
(2)
(3)
∗1
∗2
∗3
∗1 Single pulse, Pw=1ms
∗2 Each terminal mounted on a recommended
∗3 Mounted on a 25mm×25mm× t 0.8mm ceramic substrate
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff curent
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min.
−30
−30
−6
−
−
−
270
−
−
Typ.
−
−
−
−
−
−180
−
280
20
Max.
−
−
−
−100
−100
−370
680
−
−
Unit
V
V
V
nA
nA
mV
−
MHz
pF
Conditions
IC= −10µA
IC= −1mA
IE= −10µA
VCB= −30V
VEB= −6V
IC= −1.5A, IB= −75mA
VCE= −2V, IC= −200mA
VCE= −2V, IE=200mA, f=100MHz
VCB= −10V, IE=0A, f=1MHz
Rev.B
1/2
QST5
Transistors
zPackaging specifications
Taping
package
Type
TR
Code
Basic ordering unit(pieces)
3000
QST5
VCE=−2V
Pulsed
Ta=25 C
Ta=−40 C
100
10
0.001
0.01
0.1
1
10
10
IC/IB=20/1
Pulsed
1
0.1
Ta=25 C
Ta=100 C
0.01
0.001
TRANSITION FREQUENCY : fT (MHz)
COLLECTOR CURRENT :IC (A)
1
10
Ta=100 C
Ta=25 C
1
Ta=−40 C
0.1
0.1
1
1
Fig.4 Grounded emitter propagation
characteristics
IC/IB=50/1
IC/IB=20/1
0.1
0.001
IC/IB=10/1
0.01
0.1
1
10
Fig.3 Base-emitter saturation voltage
vs. collector current
10000
Ta=25 C
VCE=−2V
f=100MHz
100
Ta=25 C
VCE=−2V
IC/IB=20/1
Pulsed
1000
tstg
100
tf
tdon
10
tr
10
0.01
10
1000
Ta=25 C
Pulsed
COLLECTOR CURRENT : IC (A)
1000
VBE=−2V
Pulsed
BASE TO EMITTER CURRENT : VBE (V)
COLLECTOR CURRENT :IC (A)
0.1
Fig.2 Collector-emitter saturation voltage
vs. collector current
Fig.1 DV current gain
vs. collector current
0.01
0.01
10
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
10
Ta=−40 C
SWITCHINGTIME : (ns)
DC CURRENT GAIN : hFE
Ta=100 C
BASE SATURATION VOLTAGE : VBE(sat) (V)
1000
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
zElectrical characteristic curves
0.1
1
10
1
0.01
0.1
1
EMITTER CURRENT : IE (A)
COLLECTOR CURRENT : IC(A)
Fig.5 Gain bandwidth product
vs. emitter curent
Fig.6 Switching time
10
IC=0A
f=1MHz
Ta=25 C
Cib
100
Cob
10
1
0.001
0.01
0.1
1
10
100
EMITTER TO BASE VOLTAGE : VBE (V)
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.7 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
Rev.B
2/2
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1