Data Sheet Schottky barrier Diode RB551V-30 Dimensions (Unit : mm) Applications High frequency rectification 1.25±0.1 Land size figure (Unit : mm) 0.1±0.1 0.05 0.8MIN. 0.9MIN. 2.5±0.2 1.7±0.1 2.1 Features 1) Small mold type. (UMD2) 2) Low VF. 3) High reliability. UMD2 Construction Silicon epitaxial planar 0.7±0.2 0.1 0.3±0.05 Structure ROHM : UMD2 JEDEC : S0D-323 JEITA : SC-90/A dot (year week factory) Taping specifications (Unit : mm) 0.3±0.1 φ1.55±0.05 2.0±0.05 4.0±0.1 1.40±0.1 2.8±0.1 2.75 8.0±0.2 3.5±0.05 1.75±0.1 4.0±0.1 φ1.05 1.0±0.1 Absolute maximum ratings (Ta=25°C) Parameter Symbol VRM Reverse voltage (repetitive peak) VR Reverse voltage (DC) Average rectified forward current Io IFSM Forward current surge peak (60Hz・1cyc) Junction temperature Tj Storage temperature Tstg Electrical characteristics (Ta=25°C) Parameter Symbol Forward voltage Reverse current www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Limits 30 20 500 2 125 40 to 125 Unit V V mA A °C °C Min. Typ. Max. Unit VF 2 - - 0.36 0.47 V V IF=100mA IF=500mA IR - - 100 μA VR=20V VF 1 1/3 Conditions 2011.05 - Rev.C Data Sheet RB551V-30 100000 1000 10 Ta=-25℃ 1 100 Ta=25℃ 10 Ta=-25℃ 1 200 300 400 500 0 600 10 20 1 30 0 440 430 420 410 Ta=25℃ VR=20V n=30pcs 180 REVERSE CURRENT:IR(uA) Ta=25℃ IF=500mA n=30pcs 160 140 120 100 80 60 40 20 AVE:420.4mV 400 Ta=25℃ f=1MHz VR=0V n=10pcs 60 50 AVE:59.5pF AVE:42.7uA 40 VF DISPERSION MAP IR DISPERSIPN MAP Ct DISPERSION MAP 100 8.3ms 10 5 AVE:8.60A Ifsm PEAK SURGE FORWARD CURRENT:IFSM(A) 15 PEAK SURGE FORWARD CURRENT:IFSM(A) 100 1cyc Ifsm 8.3ms 8.3ms 1cyc 10 0 Ifsm 1 1 10 100 0.1 1 10 100 TIME:t(ms) IFSM-t CHARACTERISTICS NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 1000 t 10 1 IFSM DISPERSION MAP 30 70 0 20 20 80 200 450 10 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS CAPACITANCE BETWEEN TERMINALS:Ct(pF) 100 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS PEAK SURGE FORWARD CURRENT:IFSM(A) 10 0.1 0 FORWARD VOLTAGE:VF(mV) Ta=75℃ 1000 0.1 0.5 0.5 Rth(j-a) Rth(j-c) Mounted on epoxy board IM=1mA IF=10mA 10 1ms time 0.3 DC 0.4 REVERSE POWER DISSIPATION:PR (W) D=1/2 0.4 100 FORWARD POWER DISSIPATION:Pf(W) TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=25℃ f=1MHz 10000 REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(mA) Ta=75℃ 100 100 Ta=125℃ Ta=125℃ Sin(θ＝180) 0.2 0.3 Sin(θ＝180) 0.2 D=1/2 DC 0.1 0.1 300us 1 0.001 0 0 0.1 10 1000 TIME:t(s) Rth-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 0 0.2 0.4 0.6 0.8 AVERAGE RECTIFIED FORWARD CURRENT Io(A) Io-Pf CHARACTERISTICS 2/3 1 0 5 10 15 20 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 2011.05 - Rev.C Data Sheet RB551V-30 Io 0V VR t 1 1 DC 0.8 0.7 0.6 0V t T D=1/2 Io 0.9 VR 0.8 D=t/T VR=15V Tj=125℃ 0.5 0.4 0.3 0.2 Sin(θ＝180) 0.1 0 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0A 0.9 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0A DC 0.7 T D=1/2 0.6 0.5 0.4 0.3 0.2 Sin(θ＝180) 0.1 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. D=t/T VR=15V Tj=125℃ 0 0 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 3/3 2011.05 - Rev.C Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A