AOC3864 20V Common-Drain Dual N-Channel AlphaMOS General Description Product Summary • Trench Power AlphaMOS (αMOS LV) technology • Low RSS(ON) • Fully protected AlphaDFN package • With ESD protection to improve battery performance and safety • Common drain configuration for design simplicity • RoHS and Halogen-Free Compliant Applications VSS 20V RSS(ON) (at VGS=4.5V) < 5.7mΩ RSS(ON) (at VGS=4.0V) < 5.8mΩ RSS(ON) (at VGS=3.7V) < 6mΩ RSS(ON) (at VGS=3.1V) < 7.5mΩ RSS(ON) (at VGS=2.5V) < 9mΩ Typical ESD protection HBM Class 2 • Battery protection switch • Mobile device battery charging and discharging D2 D1 AlphaDFN 2.7x1.8_6 Top View Bottom View Top View Bottom View 3 1 Pin1 S1 G1 S1 S2 G2 S2 G2 G1 Pin1 4 6 S2 S1 Pin1 Orderable Part Number Package Type Form Minimum Order Quantity AOC3864 AlphaDFN 2.7x1.8_6 Tape & Reel 5000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Source-Source Voltage Symbol VSS Gate-Source Voltage Source Current(DC) Note1 TA=25°C Source Current(Pulse) Note2 Power Dissipation Note1 TA=25°C Junction and Storage Temperature Range Units V V VGS ±8 IS 19 ISM 80 PD TJ, TSTG Thermal Characteristics Parameter Symbol t ≤ 10s Maximum Junction-to-Ambient RθJA Steady-State Maximum Junction-to-Ambient Note 1. Is rated value is based on bare silicon.Mounted on 70mmx70mm FR-4 board. Note 2. PW <10 µs pulses, duty cycle 1% max. Rev.1.0: August 2015 Rating 20 www.aosmd.com A 2.4 W -55 to 150 °C Typical 43 52 Units °C/W °C/W Page 1 of 5 AOC3864 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVSSS Source-Source Breakdown Voltage Conditions Min Typ Max IS=250µA, VGS=0V Test Circuit 6 VSS=20V, VGS=0V Test Circuit 1 1 TJ=55°C Test Circuit 2 5 20 Units V ISSS Zero Gate Voltage Source Current IGSS VGS(th) Gate leakage current VSS=0V, VGS=±8V ±10 µA Gate Threshold Voltage VSS=VGS, IS=250µA Test Circuit 3 0.5 0.9 1.3 V VGS=4.5V, IS=4A Test Circuit 4 3.4 4.5 5.7 4.7 6.2 7.9 VGS=4.0V, IS=4A TJ=125°C Test Circuit 4 3.5 4.6 5.8 mΩ VGS=3.7V, IS=4A Test Circuit 4 3.6 4.7 6.0 mΩ VGS=3.1V, IS=4A Test Circuit 4 3.7 5.2 7.5 mΩ VGS=2.5V, IS=4A Test Circuit 4 3.8 5.9 9.0 mΩ 1 V RSS(ON) Static Source to Source On-Resistance gFS Forward Transconductance VSS=5V, IS=4A Test Circuit 3 55 VFSS Forward Source to Source Voltage IS=1A,VGS=0V Test Circuit 5 0.60 DYNAMIC PARAMETERS Rg Gate resistance f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge VG1S1=4.5V, VSS=10V, IS=4A tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VG1S1=4.5V, VSS=10V, RL=2.5Ω, RGEN=3Ω Test Circuit8 mΩ S 1 27 µA KΩ 38 nC 1.2 µs 2.2 µs 5.5 µs 6.5 µs THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: August 2015 www.aosmd.com Page 2 of 5 AOC3864 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 30 1.5V VDS=5V 25 25 2.0V 2.5V 3.0V 3.5V 4.0V 4.5V 15 20 IS(A) IS (A) 20 10 15 125°C 10 5 25°C 5 VGS=1V 0 0 0 1 2 3 4 0 5 0.5 1.5 2 VGS(Volts) Figure 2: Transfer Characteristics VSS (Volts) Figure 1: On-Region Characteristics 8 1.6 VGS=3.1V VGS=2.5V 6 Normalized On-Resistance 7 RSS(ON) (mΩ) 1 5 4 VGS=4.5V VGS=4.0V VGS=3.7V 3 VGS=4.5V IS=4A 1.4 VGS=3.7V IS=4A VGS=4.0V IS=4A 1.2 VGS=3.1V IS=4A 1 VGS=2.5V IS=4A 0.8 2 0 2 4 6 8 0 10 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature IS (A) Figure 3: On-Resistance vs. Source Current and Gate Voltage 14 1.0E+01 12 1.0E+00 10 1.0E-01 8 IS (A) RSS(ON) (mΩ) IS=4A 125°C 6 125°C 1.0E-02 1.0E-03 4 25°C 1.0E-04 25°C 2 1.0E-05 0 1 2 3 4 5 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Rev.1.0: August 2015 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VFSS (Volts) Figure 6: Forward Source to Source Characteristics Page 3 of 5 AOC3864 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 VSS=10V IS=4A VGS (Volts) 4 3 2 1 0 0 5 10 15 20 25 30 Qg (nC) Figure 7: Gate-Charge Characteristics 1000 1000.0 10µs 10µs RSS(ON) limited 10.0 100 Power (W) 100.0 IS (Amps) TJ(Max)=150°C TA=25°C 100µs 1ms 1.0 0.1 10ms TJ(Max)=150°C TA=25°C 0.0 0.01 10 DC 0.1 1 VSS (Volts) 1 10 0.1 1E-050.00010.001 0.01 100 ZθJA Normalized Transient Thermal Resistance 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note1) VGS> or equal to 2.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note1) 10 0.1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 0.1 PD 0.01 Single Pulse Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note1) Rev.1.0: August 2015 www.aosmd.com Page 4 of 5 AOC3864 TEST CIRCUIT 1 Isss TEST CIRCUIT 2 Igss1,2 POSITIVE VSS FOR ISSS+ POSITIVE VGS FOR IGSS1+ S2 NEGATIVE VSS FOR ISSS- S2 NEGATIVE VGS FOR IGSS1When FET1 is measured between GATE and SOURCE G2 A G2 of FET2 are shorted D2 D2 D1 D1 VSS G1 G1 A VG S1 TEST CIRCUIT 3 Vgs(off) S1 TEST CIRCUIT 4 Rss(on) S2 S2 When FET1 is measured Vss/Is between GATE and SOURCE of FET2 are shorted G2 G2 A Is D2 D2 D1 D1 VSS G1 G1 V VSS VGS VGS S1 TEST CIRCUIT 5 VF(SS)1,2 S1 TEST CIRCUIT 6 BVDSS POSITIVE VSS FOR ISSS+ NEGATIVE VSS FOR ISSS- S2 S2 4.5V When FET1 measured G2 G2 IF FET2 VGS=4.5V Is D2 D2 D1 D1 G1 G1 V V VSS VGS=0 S1 S1 TEST CIRCUIT 8 Switching time TEST CIRCUIT 7 BVGSO1,2 POSITIVE VSS FOR ISSS+ NEGATIVE VSS FOR ISSS- S2 Vout S2 When FET1 is measured between GATE and SOURCE G2 of FET2 are shorted G2 D2 D2 D1 D1 Vin G1 G1 V IG Rev.1.0: August 2015 S1 S1 www.aosmd.com Page 5 of 5