AOTF12T50P 500V,12A N-Channel MOSFET General Description Product Summary • Latest Trench Power AlphaMOS-II technology • Low RDS(ON) • Low Ciss and Crss • High Current Capability • RoHS and Halogen Free Compliant VDS @ Tj,max 600V IDM 48A RDS(ON),max < 0.5Ω Qg,typ 22nC Eoss @ 400V 4µJ Applications 100% UIS Tested 100% Rg Tested • General Lighting for LED and CCFL • AC/DC Power supplies for Industrial, Consumer, and Telecom TO-220F D G D S G S AOTF12T50P Orderable Part Number Package Type Form Minimum Order Quantity AOTF12T50P AOTF12T50PL TO-220F Pb Free TO-220F Green Tube Tube 1000 1000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage Continuous Drain Current VGS TC=25°C TC=100°C Pulsed Drain Current C Avalanche Current C AOTF12T50P L=1mH 500 AOTF12T50PL Units V ±30 V 12* ID A 8* IDM 48 IAR 12 A Repetitive avalanche energy C EAR 72 mJ Single pulsed avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds EAS 480 50 5 mJ dv/dt PD Rev.2.0: September 2014 43 33 0.3 0.26 TJ, TSTG W -55 to 150 °C 300 °C TL Thermal Characteristics Parameter Symbol RθJA Maximum Junction-to-Ambient A,D Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. V/ns AOTF12T50P AOTF12T50PL Units 65 2.9 65 3.8 °C/W °C/W www.aosmd.com Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 500 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V, TJ=150°C 600 ID=250µA, VGS=0V 0.47 VDS=500V, VGS=0V 1 10 Gate-Body leakage current VDS=0V, VGS=±30V VDS=5V, ID=250µA RDS(ON) VGS=10V, ID=6A gFS Forward Transconductance VDS=40V, ID=6A VSD Diode Forward Voltage IS=1A,VGS=0V IS ISM ±100 nA 5 V 0.39 0.5 Ω 1 V Maximum Body-Diode Continuous Current 12 A Maximum Body-Diode Pulsed Current C 48 A Coss Output Capacitance Co(er) Effective output capacitance, energy related H Crss Effective output capacitance, time related I Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=100V, f=1MHz Gate Source Charge 10 0.74 S 1477 pF 63 pF 50 pF 90 pF 6.3 pF 2 Ω VGS=0V, VDS=0 to 400V, f=1MHz VGS=0V, VDS=100V, f=1MHz f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs 3 µA 4 DYNAMIC PARAMETERS Input Capacitance Ciss Co(tr) V/ oC VDS=400V, TJ=125°C Gate Threshold Voltage Static Drain-Source On-Resistance IGSS VGS(th) V 22 VGS=10V, VDS=400V, ID=12A 32 nC 8 nC Qgd Gate Drain Charge 5.5 nC tD(on) Turn-On DelayTime 37 ns tr Turn-On Rise Time 54 ns tD(off) Turn-Off DelayTime VGS=10V, VDS=250V, ID=12A, RG=25Ω 46 ns tf trr 28 ns Body Diode Reverse Recovery Time IF=12A,dI/dt=100A/µs,VDS=100V 428 Qrr Body Diode Reverse Recovery Charge IF=12A,dI/dt=100A/µs,VDS=100V 6.1 ns µC Turn-Off Fall Time A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R qJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. L=60mH, IAS=4A, VDD=150V, RG=25Ω, Starting TJ=25°C. H. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS. I. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.2.0: September 2014 www.aosmd.com Page 2 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 25 -55°C 10V 20 VDS=40V 8V 7V 10 ID(A) ID (A) 15 6.5V 10 125°C 1 6V 5 25°C VGS=5.5V 0 0.1 0 5 10 15 20 25 30 2 VDS (Volts) Figure 1: On-Region Characteristics 8 10 3 Normalized On-Resistance 1.2 RDS(ON) (Ω) 6 VGS(Volts) Figure 2: Transfer Characteristics 1.5 0.9 VGS=10V 0.6 0.3 2.5 0 5 10 15 20 VGS=10V ID=6A 2 1.5 1 0.5 0 0 -100 25 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1.3 1E+02 1.2 1E+01 1.1 1E+00 1 0.9 -50 0 50 100 200 125°C 1E-01 25°C 1E-02 0.8 150 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature IS (A) BVDSS (Normalized) 4 1E-03 0.7 -100 -50 0 50 100 150 200 1E-04 TJ (°C) Figure 5: Break Down vs. Junction Temperature Rev.2.0: September 2014 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics Page 3 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10000 1000 Capacitance (pF) VGS (Volts) Ciss VDS=400V ID=12A 12 9 6 3 0 100 Coss 10 Crss 1 0 7 14 21 28 35 0.1 10 100 1000 VDS (Volts) Figure 8: Capacitance Characteristics 7.5 15 6 12 Current rating ID(A) Eoss(uJ) Qg (nC) Figure 7: Gate-Charge Characteristics 1 4.5 Eoss 3 1.5 9 6 3 0 0 0 100 200 300 400 0 500 25 50 75 100 125 TCASE (°C) Figure 10: Current De-rating (Note F) VDS (Volts) Figure 9: Coss stored Energy 100 100 10µs RDS(ON) limited 10 10µs RDS(ON) limited 10 100µs 1ms 1 10ms DC 0.1s 0.1 1s 100µs ID (Amps) ID (Amps) 150 1ms 1 10ms DC 0.1s 0.1 1s TJ(Max)=150°C TC=25°C TJ(Max)=150°C TC=25°C 0.01 0.01 1 10 100 1000 VDS(Volts) Figure 11: Maximum Forward Biased Safe Operating Area for TO-220F Pb Free (Note F) Rev.2.0: September 2014 www.aosmd.com 1 10 100 1000 VDS(Volts) Figure 12: Maximum Forward Biased Safe Operating Area for TO-220F Green (Note F) Page 4 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS ZθJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=2.9°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Single Pulse Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 13: Normalized Maximum Transient Thermal Impedance for TO-220F Pb Free (Note F) ZθJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=3.8°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Single Pulse Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 14: Normalized Maximum Transient Thermal Impedance for TO-220F Green (Note F) Rev.2.0: September 2014 www.aosmd.com Page 5 of 6 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.2.0: September 2014 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6