SW30N06

SW30N06
N-channel Enhanced mode TO-220/TO-251/TO-252 MOSFET
Features
TO-251
TO-220






High ruggedness
Low RDS(ON) (Typ 24mΩ)@VGS=10V
Low Gate Charge (Typ 25nC)
Improved dv/dt Capability
100% Avalanche Tested
Application:DC-DC Converter, Motor
Control, Synchronous Rectification
BVDSS : 60V
TO-252
: 30A
ID
RDS(ON) : 24mΩ
1
2
1
3
2
1
3
2
2
3
1. Gate 2. Drain 3. Source
1
General Description
3
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
Order Codes
Item
Sales Type
Marking
Package
Packaging
1
2
3
SW P 30N06
SW I 30N06
SW D 30N06
SW30N06
SW30N06
SW30N06
TO-220
TO-251
TO-252
TUBE
TUBE
REEL
Absolute maximum ratings
Symbol
VDSS
ID
Value
Parameter
TO-220 TO-251 TO-252
Drain to source voltage
Unit
60
V
Continuous drain current (@TC
=25oC)
30*
A
Continuous drain current (@TC
=100oC)
14*
A
120
A
±20
V
IDM
Drain current pulsed
VGS
Gate to source voltage
EAS
Single pulsed avalanche energy
(note 2)
378
mJ
EAR
Repetitive avalanche energy
(note 1)
33
mJ
Peak diode recovery dv/dt
(note 3)
5.5
V/ns
dv/dt
PD
TSTG, TJ
TL
(note 1)
Total power dissipation (@TC=25oC)
Derating factor above
25oC
250
186
104
W
2
1.46
0.83
W/oC
Operating junction temperature & storage temperature
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
-55 ~ + 150
oC
300
oC
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Parameter
Rthjc
Thermal resistance, Junction to case
Rthja
Thermal resistance, Junction to ambient
Value
TO-220 TO-251 TO-252
0.55
0.67
65
65
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
1.2
Unit
oC/W
oC/W
Oct. 2015. Rev. 4.0
1/6
SW30N06
Electrical characteristic ( TC = 25oC unless otherwise specified )
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Off characteristics
Drain to source breakdown voltage
VGS=0V, ID=250uA
ΔBVDSS
/ ΔTJ
Breakdown voltage temperature
coefficient
ID=250uA, referenced to 25oC
IDSS
Drain to source leakage current
BVDSS
IGSS
60
V
VDS=60V, VGS=0V
VDS=48V, TC
V/oC
0.06
=125oC
1
uA
50
uA
Gate to source leakage current, forward
VGS=20V, VDS=0V
100
nA
Gate to source leakage current, reverse
VGS=-20V, VDS=0V
-100
nA
4
V
36
mΩ
On characteristics
VGS(TH)
Gate threshold voltage
VDS=VGS, ID=250uA
RDS(ON)
Drain to source on state resistance
VGS=10V, ID=15A
24
Forward transconductance
VDS=20V, ID=15A
5.5
Gfs
2
S
Dynamic characteristics
580
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer capacitance
60
td(on)
Turn on delay time
8
tr
td(off)
tf
Qg
Rising time
Turn off delay time
VGS=0V, VDS=25V, f=1MHz
220
VDS=30V, ID=30A, VGS=10V,
RG=25Ω
(note 4,5)
pF
63
ns
40
Fall time
39
25
Total gate charge
Qgs
Gate-source charge
Qgd
Gate-drain charge
VDS=48V, VGS=10V, ID=30A
(note 4,5)
nC
3
15
Source to drain diode ratings characteristicsa
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
30
A
Pulsed source current
Integral reverse p-n Junction
diode in the MOSFET
120
A
Diode forward voltage drop.
IS=30A, VGS=0V
1.4
V
trr
Reverse recovery time
Qrr
Reverse recovery charge
IS=30A, VGS=0V,
dIF/dt=100A/us
IS
Continuous source current
ISM
VSD
45
ns
63
uC
※. Notes
1.
Repeatitive rating : pulse width limited by junction temperature.
2.
L = 840uH, IAS = 30A, VDD = 25V, RG=25Ω, Starting TJ = 25oC
3.
ISD ≤ 30.0A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC
4.
Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%
5.
Essentially independent of operating temperature.
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Oct. 2015. Rev. 4.0
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SW30N06
Fig. 2. On-resistance variation vs.
drain current and gate voltage
Fig. 1. On-state characteristics
Notes:
Notes:
1.1.250μs
250μs Pulse
PulseTest
Test
2.2.T=25
T=25℃℃
3.3.VGS
2~10V
Step=1V
VGS 2~10V Step=1V
VGS=20V
VGS=10V
Fig. 4. On state current vs. diode
forward voltage
Fig. 3. Gate charge characteristics
VGS, Gate Source Voltage(V)
12
10
8
VDS=48V
6
150℃
25℃
4
2
0
0
5
10
15
20
25
30
Qg, Total Gate Charge (nC)
Fig 5. Breakdown Voltage Variation
vs. Junction Temperature
Fig. 6. On resistance variation
vs. junction temperature
2.5
RDSON, (Normalized
Drain-Source ON resistance
BVDSS, (Normalized
Drain-Source Breakdown Voltage
1.2
1.1
1
0.9
2
1.5
1
0.5
0
0.8
-70 -45 -20
5
30
55
80 105 130 155 180
TJ Junction Temperture （℃）
-70 -45 -20
5
30
55
80 105 130 155 180
TJ Junction Temperture （℃）
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Oct. 2015. Rev. 4.0
3/6
SW30N06
Fig. 7. Maximum safe operating area
Fig. 8. Transient thermal response curve
Fig. 9. Gate charge test circuit & waveform
VGS
Same type
as DUT
QG
10V
VDS
QGS
QGD
DUT
VGS
3mA
Charge(nC)
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Oct. 2015. Rev. 4.0
4/6
SW30N06
Fig. 10. Switching time test circuit & waveform
VDS
RL
RGS
90%
VDS
VDD
VIN
10VIN
DUT
10%
10%
td(on)
tf
td(off)
tr
tON
tOFF
Fig. 11. Unclamped Inductive switching test circuit & waveform
Fig. 12. Peak diode recovery dv/dt test circuit & waveform
DUT
+ VDS
10V
VGS (DRIVER)
L
IS
di/dt
IS (DUT)
IRM
VDS
RG
10VGS
Diode reverse current
VDD
Diode recovery dv/dt
Same type
as DUT
VDS (DUT)
*. dv/dt controlled by RG
*. Is controlled by pulse period
VF
VDD
Body diode forward voltage drop
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Oct. 2015. Rev. 4.0
5/6
SW30N06
DISCLAIMER
* All the data & curve in this document was tested in XI’AN SEMIPOWER TESTING & APPLICATION CENTER.
* This product has passed the PCT,TC,HTRB,HTGB,HAST,PC and Solderdunk reliability testing.
* Qualification standards can also be found on the Web site (http://www.semipower.com.cn)
* Suggestions for improvement are appreciated, Please send your suggestions to [email protected]
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Oct. 2015. Rev. 4.0
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