ROHM 2SC5053T100R

2SC5053
Transistors
Medium power transistor (50V, 1A)
2SC5053
zDimensions (Unit : mm)
zFeatures
1) Low saturation voltage, typically VCE(sat) = 0.12V at IC /
IB = 500mA/ 50mA
2) PC=2W (on 40×40×0.7mm ceramic board)
3) Complements the 2SA1900
MPT3
(1)Base
(2)Collector
(3)Emitter
z Absolute maximum ratings (Ta=25°C)
Symbol
Limits
Unit
Collector-base voltage
Collector-emitter voltage
VCBO
60
V
VCEO
50
V
Emitter- base voltage
VEBO
5
V
Parameter
IC
Collector current
1
A
2
0.5
A (Pulse)
Collector power dissipation
PC
2
W
Collector power dissipation
tj
150
°C
tstg
−55 to +150
°C
Storage temperature
∗1
W
∗2
+
+
∗1 Single pulse Pw=100ms
∗2 When mounted on a 40 40 0.7mm seramic board.
zElectrical characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Parameter
BVCBO
BVCEO
60
50
−
−
−
−
V
V
Emitter-base breakdown voltage
BVEBO
ICBO
5
−
−
V
IE = 50µA
−
−
0.1
µA
VCB = 40V
−
−
−
−
0.1
0.4
µA
V
VEB = 4V
IC/IB = 500mA/50mA
120
−
390
−
Transition frequency
IEBO
VCE(sat)
hFE
fT
−
150
−
MHz
Output capacitance
Cob
−
15
−
pF
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Conditions
IC = 50µA
IC = 1mA
VCE/IC = 3V/0.5A
VCE = 5V , IE = −50mA , f=100MHz
VCB = 10V , IE = 0A , f=1MHz
zPackaging specifications and hFE
Type
2SC5053
Package
hFE
MPT3
QR
CG ∗
Marking
Code
T100
Basic ordering unit (pleces)
1000
∗ Denotes hFE
Rev.D
1/2
2SC5053
Transistors
1000
9mA
A
7mA
8m
10mA
800
5mA
700
4mA
600
3mA
500
400
2mA
300
IB=1mA
200
VCE=3V
200
100
50
20
10
5
2
100
0
0
Ta=25°C
500
6mA
1
2
3
4
1
0.001
0.005
0.02 0.05 0.1 0.2
0.002
0.01
5
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
200
100
50
20
10
5
2
1
−1m
−10m
−0.1
EMITTER CURRENT : IE (A)
Fig.4 Gain bandwith product
vs. emitter current
−1
2
200
100
50
20
10
5
2
1
1m
Ta=25°C
f=1MHz
IE=0A
200
10m
100m
1
2
COLLECTOR CURRENT : IC (A)
Fig.2 DC current gain
vs. collector current
COLLECTOR OUTPUT CAPACITANCE : Cob( (pF)
TRANSITION FREQUENCY : fT (MHz)
Ta=25°C
VCE=5V
500
1
Ta=25°C
IC/IB=10
500
COLLECTOR CURRENT : IC (A)
Fig.1 Grounded emitter output characteristics
1000
0.5
1000
100
50
20
10
5
Fig.3 Collector-emitter saturation voltage
vs.collector current
5
IC Max. (Pulse ∗)
COLLECTOR CURRENT : IC (A)
900
DC CURRENT GAIN : hFE
COLLECTOR CURRENT : IC (mA)
1000
COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV)
zElectric characteristics curves
2
10ms
100ms
1
0.5
0.2
DC
0.1
0.05
2
1
0.1
0.2
0.5
1
2
5
10
20
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.5 Collector output capacitance
vs. collector-base voltage
0.02 Ta=25°C
∗Single
0.01 nonrepeatitive pulse
0.2
0.5
1
2
5
10
20
50 100
COLLECTOR TO EMITTER VOLTAGE : ICE (V)
Fig.6 Safe operating area
Rev.D
2/2
Appendix
Notes
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The contents described herein are subject to change without notice. The specifications for the
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that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
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Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
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Appendix1-Rev2.0