ROHM RRH040P03

4V Drive Pch MOSFET
RRH040P03
Dimensions (Unit : mm)
Structure
Silicon P-channel MOSFET
SOP8
Features
1) Low Gate Charge.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (SOP8).
Application
Switching
Each lead has same dimensions
Packaging specifications
Package
Type
Inner circuit
Taping
(8)
(7)
(6)
(5)
TB
Code
Basic ordering unit (pieces)
2500
RRH040P03
∗2
∗1
(1)
(2)
(3)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(4)
(1) Source
(2) Source
(3) Source
(4) Gate
(5) Drain
(6 )Drain
(7) Drain
(8) Drain
Absolute maximum ratings (Ta = 25C)
Symbol
Limits
Unit
Drain-source voltage
VDSS
−30
V
Gate-source voltage
VGSS
±20
V
Parameter
Drain current
Source current
(Body Diode)
Continuous
ID
±4
A
Pulsed
IDP
±16
A
Continuous
Is
−1.6
A
Pulsed
Isp
−16
A
∗1
∗1
∗2
Total power dissipation
PD
2.0
W
Channel temperature
Tch
150
°C
Range of storage temperature
Tstg
−55 to +150
°C
Symbol
Limits
Unit
Rth (ch-a)∗
62.5
°C / W
∗1 Pw≤10μs, Duty cycle≤1%
∗2 Mounted on a ceramic board.
Thermal resistance
Parameter
Channel to Ambient
∗ Mounted on a ceramic board.
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1/5
2009.12 - Rev.A
RRH040P03
Data Sheet
Electrical characteristics (Ta = 25C)
Parameter
Gate-source leakage
Drain-source breakdown voltage
Symbol
Min.
Typ.
Max.
Unit
IGSS
−
−
±10
μA
VGS=±20V, VDS=0V
V (BR)DSS
−30
−
−
V
ID=−1mA, VGS=0V
Test Conditions
IDSS
−
−
−1
μA
VDS=−30V, VGS=0V
Gate threshold voltage
VGS (th)
−1.0
−
−2.5
V
VDS=−10V, ID=−1mA
−
55
75
Static drain-source on-state
resistance
RDS (on)∗
−
85
115
−
95
125
Forward transfer admittance
l Yfs l ∗
3
−
−
S
ID=−4A, VDS=−10V
Input capacitance
Ciss
−
480
−
pF
VDS=−10V
Output capacitance
Coss
−
70
−
pF
VGS=0V
Reverse transfer capacitance
Crss
−
70
−
pF
f=1MHz
td(on) ∗
tr ∗
−
7
−
ns
ID=−2A, VDD
−
18
−
ns
VGS=−10V
td(off) ∗
tf ∗
−
50
−
ns
RL=7.5Ω
−
37
−
ns
RG=10Ω
Qg ∗
−
5.2
−
nC
Qgs ∗
Qgd ∗
−
1.6
−
nC
−
1.6
−
nC
ID=−4A, VDD
VGS=−5V
RL=3.8Ω
RG=10Ω
Zero gate voltage drain current
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
ID=−4A, VGS=−10V
mΩ
ID=−2A, VGS=−4.5V
ID=−2A, VGS=−4V
−15V
−15V
∗Pulsed
Body diode characteristics (Source-Drain) (Ta = 25C)
Parameter
Forward Voltage
Symbol
VSD ∗
Min.
Typ.
Max.
Unit
−
−
−1.2
V
Test Conditions
Is=−4A, VGS=0V
∗Pulsed
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c 2009 ROHM Co., Ltd. All rights reserved.
○
2/5
2009.12 - Rev.A
RRH040P03
Data Sheet
Electrical characteristic curves
6
18
4
VGS= -3.0V
2
14
12
10
6
4
VGS= -3.0V
2
0
0.2
0.4
0.6
0.8
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= - 25°C
0.1
0.01
1
0
2
4
6
8
1
10
1.5
2
2.5
3
DRAIN-SOURCE VOLTAGE : -VDS[V]
DRAIN-SOURCE VOLTAGE : -VDS[V]
GATE-SOURCE VOLTAGE : -VGS[V]
Fig.1 Typical Output Characteristics(Ⅰ)
Fig.2 Typical Output Characteristics(Ⅱ)
Fig.3 Typical Transfer Characteristics
100
1000
VGS= -10V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
100
10
10
10
0.1
DRAIN-CURRENT : -ID[A]
10
10
FORWARD TRANSFER
ADMITTANCE : |Yfs| [S]
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
100
1
10
DRAIN-CURRENT : -ID[A]
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅳ)
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○
10
0.1
1
VDS= -10V
Pulsed
1
Ta= -25°C
Ta=25°C
Ta=75°C
Ta=125°C
0.01
0.1
1
10
DRAIN-CURRENT : -ID[A]
0.1
10
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
100
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅱ)
1000
0.1
VGS= -4.5V
Pulsed
DRAIN-CURRENT : -ID[A]
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅰ)
VGS= -4.0V
Pulsed
1
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅲ)
REVERSE DRAIN CURRENT : -Is [A]
1
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[mΩ]
VGS= -4.0V
VGS= -4.5V
VGS= -10V
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[mΩ]
1000
Ta=25°C
Pulsed
0.1
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[mΩ]
VDS= -10V
Pulsed
1
0
0
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[mΩ]
VGS= -4.0V
VGS= -3.5V
8
VGS= -2.5V
1000
10
Ta=25°C
Pulsed
VGS= -10V
16
DRAIN CURRENT : -ID[A]
DRAIN CURRENT : -ID[A]
8
20
Ta=25°C
Pulsed
VGS= -10V
VGS= -4.5V
VGS= -4.0V
VGS= -3.5V
DRAIN CURRENT : -ID[A]
10
10
10
VGS=0V
Pulsed
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.1
0.01
0
0.5
1
1.5
DRAIN-CURRENT : -ID[A]
SOURCE-DRAIN VOLTAGE : -VSD [V]
Fig.8 Forward Transfer Admittance
vs. Drain Current
Fig.9 Reverse Drain Current
vs. Sourse-Drain Voltage
3/5
2009.12 - Rev.A
RRH040P03
Data Sheet
10000
250
200
ID= -2.0A
150
ID= -4.0A
100
50
0
td(off)
1000
tf
5
Ta=25°C
VDD= -15V
VGS=-10V
RG=10Ω
Pulsed
GATE-SOURCE VOLTAGE : -VGS [V]
Ta=25°C
Pulsed
SWITCHING TIME : t [ns]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[mΩ]
300
100
td(on)
10
tr
1
0
5
10
15
GATE-SOURCE VOLTAGE : -VGS[V]
Fig.10 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
0.01
0.1
1
10
DRAIN-CURRENT : -ID[A]
Fig.11 Switching Characteristics
4
3
2
Ta=25°C
VDD= -15V
ID= -4.0A
RG=10Ω
Pulsed
1
0
0
1
2
3
4
5
6
TOTAL GATE CHARGE : Qg [nC]
Fig.12 Dynamic Input Characteristics
CAPACITANCE : C [pF]
10000
Ta=25°C
f=1MHz
VGS=0V
Ciss
1000
100
Crss
Coss
10
0.01
0.1
1
10
100
GATE-SOURCE VOLTAGE : -VDS[V]
Fig.13 Typical Capacitance
vs. Drain-Source Voltage
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c 2009 ROHM Co., Ltd. All rights reserved.
○
4/5
2009.12 - Rev.A
RRH040P03
Data Sheet
Measurement circuit
Pulse Width
VGS
ID
VDS
VGS
10%
50%
90%
50%
RL
D.U.T.
10%
10%
RG
VDD
VDS
90%
td(on)
90%
td(off)
tr
ton
Fig.1-1 Switching Time Measurement Circuit
tf
toff
Fig.1-2 Switching Waveforms
VG
VGS
ID
VDS
RL
D.U.T.
IG(Const.)
Qg
VGS
Qgs
RG
Qgd
VDD
Charge
Fig.2-1 Gate Charge Measurement Circuit
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c 2009 ROHM Co., Ltd. All rights reserved.
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Fig.2-2 Gate Charge Waveform
5/5
2009.12 - Rev.A
Notice
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