SW75N75 N-channel Enhanced mode TO-220 MOSFET Features BVDSS : 75V TO-220 : 75A ID High ruggedness Low RDS(ON) (Typ 6mΩ)@VGS=10V Low Gate Charge (Typ 126nC) Improved dv/dt Capability 100% Avalanche Tested ApplicationSynchronous Rectification, Li Battery Protect Board, DC-DC RDS(ON) : 6mΩ 1 2 2 3 1 1. Gate 2. Drain 3. Source 3 General Description This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. Order Codes Item Sales Type Marking Package Packaging 1 SW P 75N75 SW 75N75 TO-220 TUBE Value Unit 75 V 75* A 47.3* A 28 A ±30 V Absolute maximum ratings Symbol VDSS ID Parameter Drain to source voltage Continuous drain current (@TC=25oC) Continuous drain current (@TC =100oC) IDM Drain current pulsed VGS Gate to source voltage EAS Single pulsed avalanche energy (note 2) 1004 mJ EAR Repetitive avalanche energy (note 1) 45 mJ Peak diode recovery dv/dt (note 3) 7 V/ns 312 W 2.5 W/oC -55 ~ + 150 oC 300 oC Value Unit dv/dt PD TSTG, TJ TL (note 1) Total power dissipation (@TC=25oC) Derating factor above 25oC Operating junction temperature & storage temperature Maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds. *. Drain current is limited by junction temperature. Thermal characteristics Symbol Parameter Rthjc Thermal resistance, Junction to case 0.4 oC/W Rthja Thermal resistance, Junction to ambient 60 oC/W Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Oct. 2015. Rev. 4.0 1/6 SW75N75 Electrical characteristic ( TC = 25oC unless otherwise specified ) Symbol Parameter Test conditions Min. Typ. Max. Unit Off characteristics BVDSS Drain to source breakdown voltage VGS=0V, ID=250uA ΔBVDSS / ΔTJ Breakdown voltage temperature coefficient ID=250uA, referenced to 25oC IDSS Drain to source leakage current 75 V VDS=75V, VGS=0V VDS=60V, TC V/oC 0.07 =125oC 1 uA 20 uA Gate to source leakage current, forward VGS=20V, VDS=0V 100 nA Gate to source leakage current, reverse VGS=-20V, VDS=0V -100 nA 4.0 V 8 mΩ IGSS On characteristics VGS(TH) Gate threshold voltage VDS=VGS, ID=250uA RDS(ON) Drain to source on state resistance VGS=10V, ID = 37.5A 6 Forward transconductance VDS = 40 V, ID = 37.5 A 21 Gfs 2.0 S Dynamic characteristics 960 Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance 15 td(on) Turn on delay time 37 tr td(off) tf Qg Rising time Turn off delay time VGS=0V, VDS=25V, f=1MHz 110 VDS=60V, ID=75A, VGS=10V, RG=25Ω (note 4,5) pF 67 ns 72 Fall time 30 126 Total gate charge Qgs Gate-source charge Qgd Gate-drain charge VDS=37.5V, VGS=10V, ID=75A (note 4,5) 46 nC 47 Source to drain diode ratings characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit 75 A Pulsed source current Integral reverse p-n Junction diode in the MOSFET 300 A Diode forward voltage drop. IS=75A, VGS=0V 1.4 V trr Reverse recovery time Qrr Reverse recovery charge IS=75A, VGS=0V, dIF/dt=100A/us IS Continuous source current ISM VSD 36.5 ns 52 nC ※. Notes 1. Repeatitive rating : pulse width limited by junction temperature. 2. L = 0.36mH, IAS = 75A, VDD = 50V, RG=25Ω, Starting TJ = 25oC 3. ISD ≤ 75A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC 4. Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2% 5. Essentially independent of operating temperature. Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Oct. 2015. Rev. 4.0 2/6 5 1.2Junction Temperture 1.1 0.9 0 0.8 TJ SW75N75 Fig. 2. On-resistance variation vs. drain current and gate voltage Fig. 1. On-state characteristics VGS=10V Notes: 1. 250μs Pulse Test 2. T=25 ℃ 3. VGS 2~10V Step=1V VGS=20V Fig. 4. On state current vs. diode forward voltage Fig. 3. Gate charge characteristics VGS, Gate Source Voltage(V) 12.0 10.0 150℃ VDS=60V 8.0 25℃ 6.0 4.0 2.0 0.0 0.0 50.0 100.0 150.0 Qg, Total Gate Charge (nC) Fig. 6. On resistance variation vs. junction temperature Fig 5. Breakdown Voltage Variation vs. Junction Temperature 2.5 2 1.1 RDSON, (Normalized Drain-Source ON resistance BVDSS, (Normalized Drain-Source Breakdown Voltage 1.2 1 0.9 1.5 1 0.5 0.8 -70 -45 -20 5 30 55 80 105 130 155 180 TJ Junction Temperture （℃） 0 -70 -45 -20 5 30 55 80 105 130 155 180 TJ Junction Temperture （℃） Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Oct. 2015. Rev. 4.0 3/6 SW75N75 Fig. 7. Maximum safe operating area Fig. 8. Transient thermal response curve Fig. 9. Gate charge test circuit & waveform VGS Same type as DUT QG 10V VDS VGS QGS QGD DUT 4mA Charge(nC) Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Oct. 2015. Rev. 4.0 4/6 SW75N75 Fig. 10. Switching time test circuit & waveform VDS RL 90% VDS VDD VIN RGS 10VIN DUT 10% 10% td(on) td(off) tr tON tf tOFF Fig. 11. Unclamped Inductive switching test circuit & waveform Fig. 12. Peak diode recovery dv/dt test circuit & waveform DUT + VDS 10V VGS (DRIVER) L IS di/dt IS (DUT) IRM VDS RG 10VGS Diode reverse current VDD Diode recovery dv/dt Same type as DUT VDS (DUT) *. dv/dt controlled by RG *. Is controlled by pulse period VF VDD Body diode forward voltage drop Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Oct. 2015. Rev. 4.0 5/6 SW75N75 DISCLAIMER * All the data & curve in this document was tested in XI’AN SEMIPOWER TESTING & APPLICATION CENTER. * This product has passed the PCT,TC,HTRB,HTGB,HAST,PC and Solderdunk reliability testing. * Qualification standards can also be found on the Web site (http://www.semipower.com.cn) * Suggestions for improvement are appreciated, Please send your suggestions to [email protected] Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Oct. 2015. Rev. 4.0 6/6