SW840

SAMWIN
SW840
N-channel MOSFET
TO-220
Features
TO-220F
BVDSS : 500V
ID
■ High ruggedness
■ RDS(ON) (Max 0.9Ω)@VGS=10V
■ Gate Charge (Typical 47nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
: 8.5A
RDS(ON) : 0.9ohm
1 2
12
3
2
3
1. Gate 2. Drain 3. Source
1
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as
fast switching time, low on resistance, low gate charge and especially excellent
avalanche characteristics. This power MOSFET is usually used at high efficient DC to
DC converter block, high efficiency switch mode power supplies, power factor
correction, electronic lamp ballast based on half bridge.
3
Order Codes
Item
1
2
Sales Type
SW P 840
SW F 840
Marking
SW840
SW840
Package
TO-220
TO-220F
Packaging
TUBE
TUBE
Absolute maximum ratings
Symbol
VDSS
ID
Value
Parameter
TO-220
Drain to Source Voltage
TO-220F
Unit
500
V
Continuous Drain Current (@TC
=25oC)
8.5*
A
Continuous Drain Current (@TC
=100oC)
5.5*
A
34
A
± 30
V
IDM
Drain current pulsed
VGS
Gate to Source Voltage
EAS
Single pulsed Avalanche Energy
(note 2)
445
538
mJ
EAR
Repetitive Avalanche Energy
(note 1)
33
58
mJ
(note 3)
3.5
5.0
V/ns
195
21
W
1.56
0.17
W/oC
dv/dt
PD
TSTG, TJ
TL
(note 1)
Peak diode Recovery dv/dt
Total power dissipation (@TC
Derating Factor above
=25oC)
25oC
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
-55 ~ + 150
oC
300
oC
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Parameter
Value
Unit
Rthjc
Thermal resistance, Junction to case
0.64
5.8
oC/W
Rthcs
Thermal resistance, Case to Sink
0.5
-
oC/W
Rthja
Thermal resistance, Junction to ambient
65
45
oC/W
Co[email protected] SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Jan. 2013. Rev. 2.0
1/5
SAMWIN
SW840
Electrical characteristic ( TC = 25oC unless otherwise specified )
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
-
V
-
V/oC
1
uA
Off characteristics
BVDSS
Drain to source breakdown voltage
VGS=0V, ID=250uA
ΔBVDSS
/ ΔTJ
Breakdown voltage temperature
coefficient
ID=250uA, referenced to 25oC
-
IDSS
Drain to source leakage current
VDS=500V, VGS=0V
-
VDS=400V, TC=125oC
-
-
20
uA
Gate to source leakage current, forward
VGS=30V, VDS=0V
-
-
100
nA
Gate to source leakage current, reverse
VGS=-30V, VDS=0V
-
-
-100
nA
IGSS
500
0.51
On characteristics
VGS(TH)
Gate threshold voltage
VDS=VGS, ID=250uA
2.0
-
4.0
V
RDS(ON)
Drain to source on state resistance
VGS=10V, ID = 4.25A
-
0.75
0.9
Ω
Forward Transconductance
VDS = 50 V, ID = 4.25 A
5
-
-
S
-
1180
1450
-
130
210
-
30
35
-
18
60
-
40
80
-
170
320
-
60
100
-
47
60
-
6.8
-
-
22
-
Min.
Typ.
Max.
Unit
-
-
8.5
A
-
-
34
A
Gfs
Dynamic characteristics
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer capacitance
td(on)
Turn on delay time
tr
td(off)
tf
Rising time
Turn off delay time
VGS=0V, VDS=25V, f=1MHz
VDS=250V, ID=8.5A, RG=25Ω
(note 4,5)
Fall time
Qg
Total gate charge
Qgs
Gate-source charge
Qgd
Gate-drain charge
VDS=400V, VGS=10V, ID=8.5A
(note 4,5)
pF
ns
nC
Source to drain diode ratings characteristics
Symbol
Parameter
Test conditions
IS
Continuous source current
ISM
Pulsed source current
Integral reverse p-n Junction
diode in the MOSFET
VSD
Diode forward voltage drop.
IS=8.5A, VGS=0V
-
-
1.5
V
Trr
Reverse recovery time
-
320
-
ns
Qrr
Reverse recovery charge
IS=8.5A, VGS=0V,
dIF/dt=100A/us
-
3.1
-
uC
※. Notes
1.
Repeatitive rating : pulse width limited by junction temperature.
2.
L = 12.3mH, IAS = 8.5A, VDD = 50V, RG=25Ω, Starting TJ = 25oC
3.
ISD ≤ 8.5A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC
4.
Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%
5.
Essentially independent of operating temperature.
[email protected] SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Jan. 2013. Rev. 2.0
2/5
SAMWIN
SW840
Fig. 1. On-state characteristics
Fig. 2. On-resistance variation vs.
drain current and gate voltage
VGS=10V
VGS=20V
Notes:
1. 250μs Pulse Test
2. T=25 ℃
3. VGS 2~10V Step=1V
Fig. 4. On state current vs. diode
forward voltage
Fig. 3. Gate charge characteristics
Vgs, Gate Source Voltage(V)
12
10
8
150℃
VDS=400V
25℃
6
4
2
0
0
10
20
30
40
50
Qg, Total Gate Charge (nC)
Fig 5. Breakdown Voltage Variation
vs. Junction Temperature
Fig. 6. On resistance variation
vs. junction temperature
3.5
RDSON, (Normalized
Drain-Source ON resistance
BVDSS, (Normalized
Drain-Source Breakdown Voltage
1.2
1.1
1
3
2.5
2
1.5
1
0.9
0.5
0.8
-70
-45
-20
5
30
55
80
105
130
155
180
0
-70
-45
-20
5
30
55
80
105
130
155
180
TJ Junction Temperture (℃)
TJ Junction Temperture (℃)
[email protected] SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Jan. 2013. Rev. 2.0
3/5
SAMWIN
SW840
Fig. 7. Maximum safe operating area
Fig. 8. Transient thermal response curve
Fig. 9. Gate charge test circuit & waveform
VGS
Same type
as DUT
QG
10V
VDS
QGD
QGS
DUT
VGS
2mA
Charge
nC
Fig. 10. Switching time test circuit & waveform
VDS
RL
90%
VDS
Rgs
VDD
VIN
10VIN
DUT
10%
10%
td(on)
tr
tON
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tf
td(off)
tOFF
Jan. 2013. Rev. 2.0
4/5
SAMWIN
SW840
Fig. 11. Unclamped Inductive switching test circuit & waveform
Fig. 12. Peak diode recovery dv/dt test circuit & waveform
DUT
+ VDS
10V
VGS (DRIVER)
L
IS
di/dt
IS (DUT)
IRM
VDS
RG
10VGS
Diode reverse current
VDD
Diode recovery dv/dt
Same type
as DUT
VDS (DUT)
*. dv/dt controlled by RG
*. Is controlled by pulse period
*. di/dt setted 100A/uS
[email protected] SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
VF
VDD
Body diode forward voltage drop
Jan. 2013. Rev. 2.0
5/5