SAMWIN SW840 N-channel MOSFET TO-220 Features TO-220F BVDSS : 500V ID ■ High ruggedness ■ RDS(ON) (Max 0.9Ω)@VGS=10V ■ Gate Charge (Typical 47nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested : 8.5A RDS(ON) : 0.9ohm 1 2 12 3 2 3 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block, high efficiency switch mode power supplies, power factor correction, electronic lamp ballast based on half bridge. 3 Order Codes Item 1 2 Sales Type SW P 840 SW F 840 Marking SW840 SW840 Package TO-220 TO-220F Packaging TUBE TUBE Absolute maximum ratings Symbol VDSS ID Value Parameter TO-220 Drain to Source Voltage TO-220F Unit 500 V Continuous Drain Current (@TC =25oC) 8.5* A Continuous Drain Current (@TC =100oC) 5.5* A 34 A ± 30 V IDM Drain current pulsed VGS Gate to Source Voltage EAS Single pulsed Avalanche Energy (note 2) 445 538 mJ EAR Repetitive Avalanche Energy (note 1) 33 58 mJ (note 3) 3.5 5.0 V/ns 195 21 W 1.56 0.17 W/oC dv/dt PD TSTG, TJ TL (note 1) Peak diode Recovery dv/dt Total power dissipation (@TC Derating Factor above =25oC) 25oC Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. -55 ~ + 150 oC 300 oC *. Drain current is limited by junction temperature. Thermal characteristics Symbol Parameter Value Unit Rthjc Thermal resistance, Junction to case 0.64 5.8 oC/W Rthcs Thermal resistance, Case to Sink 0.5 - oC/W Rthja Thermal resistance, Junction to ambient 65 45 oC/W Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Jan. 2013. Rev. 2.0 1/5 SAMWIN SW840 Electrical characteristic ( TC = 25oC unless otherwise specified ) Symbol Parameter Test conditions Min. Typ. Max. Unit - V - V/oC 1 uA Off characteristics BVDSS Drain to source breakdown voltage VGS=0V, ID=250uA ΔBVDSS / ΔTJ Breakdown voltage temperature coefficient ID=250uA, referenced to 25oC - IDSS Drain to source leakage current VDS=500V, VGS=0V - VDS=400V, TC=125oC - - 20 uA Gate to source leakage current, forward VGS=30V, VDS=0V - - 100 nA Gate to source leakage current, reverse VGS=-30V, VDS=0V - - -100 nA IGSS 500 0.51 On characteristics VGS(TH) Gate threshold voltage VDS=VGS, ID=250uA 2.0 - 4.0 V RDS(ON) Drain to source on state resistance VGS=10V, ID = 4.25A - 0.75 0.9 Ω Forward Transconductance VDS = 50 V, ID = 4.25 A 5 - - S - 1180 1450 - 130 210 - 30 35 - 18 60 - 40 80 - 170 320 - 60 100 - 47 60 - 6.8 - - 22 - Min. Typ. Max. Unit - - 8.5 A - - 34 A Gfs Dynamic characteristics Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance td(on) Turn on delay time tr td(off) tf Rising time Turn off delay time VGS=0V, VDS=25V, f=1MHz VDS=250V, ID=8.5A, RG=25Ω (note 4，5) Fall time Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge VDS=400V, VGS=10V, ID=8.5A (note 4，5) pF ns nC Source to drain diode ratings characteristics Symbol Parameter Test conditions IS Continuous source current ISM Pulsed source current Integral reverse p-n Junction diode in the MOSFET VSD Diode forward voltage drop. IS=8.5A, VGS=0V - - 1.5 V Trr Reverse recovery time - 320 - ns Qrr Reverse recovery charge IS=8.5A, VGS=0V, dIF/dt=100A/us - 3.1 - uC ※. Notes 1. Repeatitive rating : pulse width limited by junction temperature. 2. L = 12.3mH, IAS = 8.5A, VDD = 50V, RG=25Ω, Starting TJ = 25oC 3. ISD ≤ 8.5A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC 4. Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2% 5. Essentially independent of operating temperature. Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Jan. 2013. Rev. 2.0 2/5 SAMWIN SW840 Fig. 1. On-state characteristics Fig. 2. On-resistance variation vs. drain current and gate voltage VGS=10V VGS=20V Notes: 1. 250μs Pulse Test 2. T=25 ℃ 3. VGS 2~10V Step=1V Fig. 4. On state current vs. diode forward voltage Fig. 3. Gate charge characteristics Vgs, Gate Source Voltage(V) 12 10 8 150℃ VDS=400V 25℃ 6 4 2 0 0 10 20 30 40 50 Qg, Total Gate Charge (nC) Fig 5. Breakdown Voltage Variation vs. Junction Temperature Fig. 6. On resistance variation vs. junction temperature 3.5 RDSON, (Normalized Drain-Source ON resistance BVDSS, (Normalized Drain-Source Breakdown Voltage 1.2 1.1 1 3 2.5 2 1.5 1 0.9 0.5 0.8 -70 -45 -20 5 30 55 80 105 130 155 180 0 -70 -45 -20 5 30 55 80 105 130 155 180 TJ Junction Temperture （℃） TJ Junction Temperture （℃） Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Jan. 2013. Rev. 2.0 3/5 SAMWIN SW840 Fig. 7. Maximum safe operating area Fig. 8. Transient thermal response curve Fig. 9. Gate charge test circuit & waveform VGS Same type as DUT QG 10V VDS QGD QGS DUT VGS 2mA Charge nC Fig. 10. Switching time test circuit & waveform VDS RL 90% VDS Rgs VDD VIN 10VIN DUT 10% 10% td(on) tr tON Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. tf td(off) tOFF Jan. 2013. Rev. 2.0 4/5 SAMWIN SW840 Fig. 11. Unclamped Inductive switching test circuit & waveform Fig. 12. Peak diode recovery dv/dt test circuit & waveform DUT + VDS 10V VGS (DRIVER) L IS di/dt IS (DUT) IRM VDS RG 10VGS Diode reverse current VDD Diode recovery dv/dt Same type as DUT VDS (DUT) *. dv/dt controlled by RG *. Is controlled by pulse period *. di/dt setted 100A/uS Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. VF VDD Body diode forward voltage drop Jan. 2013. Rev. 2.0 5/5