ROHM RB160VA-40TR

Schottky Barrier Diodes
RB160VA-40
Applications
General rectification
Dimensions (Unit : mm)
 Land size figure (Unit : mm)
1.1
0.17±0.1
0.05
1.9±0.1
3) High reliability.
2.5±0.2
Features
1) Small mold type. (TUMD2)
2) Low VF, Low IR.
0.8 0.5
2.0
1.3±0.05
TUMD2
Structure
0.8±0.05
Construction
Silicon epitaxial planar
0.6±0.2
0.1
ROHM : TUMD2
dot (year week factory) + day
 Taping specifications (Unit : mm)
1.43±0.05
4.0±0.1
φ1.0±0.2
0
8.0±0.2
2.8±0.05
2.8±0.05
0.25±0.05
1.75±0.1
φ1.55±0.1
0.05
2.0±0.05
3.5±0.05
4.0±0.1
0.9±0.08
Absolute maximum ratings (Ta=25C)
Parameter
Reverse voltage (repetitive)
Reverse voltage (DC)
Average rectified forward current
Forward current surge peak (60Hz・1cyc)
Forward current surge peak(t=100μs・1cyc)
Junction temperature
Storage temperature
Limits
40
40
1
5
10
150
-40 to +150
Symbol
VRM
VR
Io
IFSM
IFSM
Tj
Tstg
Unit
V
V
A
A
A
℃
℃
Electrical characteristics (Ta=25C)
Parameter
Forward voltage
Reverse current
Symbol
VF
Min.
Typ.
Max.
Unit
-
0.50
0.55
V
IR
-
1.5
50
μA
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©2010 ROHM Co., Ltd. All rights reserved.
1/3
Conditions
IF=700mA
VR=40V
2010.06 - Rev.D
RB160VA-40
Data Sheet
Electrical characteristic curves (Ta=25C)
100000
1
Ta=150℃
f=1MH
Ta=75℃
Ta=25℃
0.01
Ta=-25℃
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ta=125℃
0.1
1000
Ta=125℃
10000
REVERSE CURRENT:IR(uA)
FORWARD CURRENT:IF(A)
Ta=150℃
1000
Ta=75℃
100
10
Ta=25℃
1
Ta=-25℃
0.1
100
10
0.01
0.001
100
200
300
400
500
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
600
0
510
500
AVE:501.9mV
490
10
20
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
25
190
20
15
10
AVE:1.5772uA
5
0
180
170
160
150
140
130
120
110
100
Ct DISPERSION MAP
IR DISPERSION MAP
20
30
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
20
15
15
10
10
5
5
0
0
25
20
15
10
5
0
1
10
100
1
10
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
IFSM DISRESION MAP
1
1000
30
200
Ta=25℃
VR=40V
n=30pcs
VF DISPERSION MAP
0.3
0.9
D=1/2
100
0.7
REVERSE POWER
DISSIPATION:PR (W)
0.8
FORWARD POWER
DISSIPATION:Pf(W)
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
0
40
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
520
REVERSE CURRENT:IR(uA)
Ta=25℃
IF=0.7A
n=30pcs
480
PEAK SURGE
FORWARD CURRENT:IFSM(A)
10
20
30
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
30
530
FORWARD VOLTAGE:VF(mV)
1
0.001
0
Sin(θ=180)
0.6
DC
0.5
0.4
0.3
0.2
Sin (θ=180)
D=1/2
0.1
DC
0.2
0.1
10
0.001
0.1
10
TIME:t(s)
Rth-t CHARACTERISTICS
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©2010 ROHM Co., Ltd. All rights reserved.
1000
0
0
0
0.5
1
1.5
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
2/3
2
0
10
20
30
40
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
2010.06 - Rev.D
RB160VA-40
2
2
0A
0V
D=1/2 DC
1.5
Io
t
T
VR
D=t/T
VR=20V
Tj=150℃
1
0.5
Sin(θ=180)
DC
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Data Sheet
Sin(θ=180)
1.5
D=1/2
1
Io
0A
0V
0.5
t
0
0
0
25
50
75
100
125
AMBIENT TEMPERATURE:Ta(℃)
Derating Curve゙(Io-Ta)
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©2010 ROHM Co., Ltd. All rights reserved.
150
0
25
VR
D=t/T
VR=20V
T Tj=125℃
50
75
100
125
150
CASE TEMPARATURE:Tc(℃)
Derating Curve゙(Io-Tc)
3/3
2010.06 - Rev.D
Notice
Notes
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R1010A