UTT12P10

UNISONIC TECHNOLOGIES CO., LTD
UTT12P10
Power MOSFET
100V, 12A P-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC UTT12P10 is a P-channel power MOSFET using
UTC’s advanced technology to provide the customers with high
switching speed, cost-effectiveness and a minimum on-state
resistance. It can also withstand high energy in the avalanche.

FEATURES
* RDS(ON) < 0.2Ω @ VGS=-10V, ID=-12A
* High Switching Speed

SYMBOL
2.Drain
1.Gate
3.Source

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UTT12P10L-TM3-T
UTT12P10G-TM3-T
UTT12P10L-TN3-R
UTT12P10G-TN3-R
Note: Pin Assignment: G: Gate
D: Drain
S: Source

Package
TO-251
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tape Reel
MARKING
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UTT12P10

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-100
V
Gate-Source Voltage
VGSS
±20
V
Continuous,
TC=25°C
ID
-12
A
[email protected]
Drain Current
Pulsed (Note 2)
IDM
-48
A
60
mJ
Single Pulsed (Note 2)
EAS
Power Dissipation (TC=25°C)
PD
125
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive rating; pulse width limited by max. junction temperature.
3. VDD=-25V, starting TJ=25°C, L=0.83mH, RG=25Ω, IAS=12A. (See Figure 2)

THERMAL DATA
PARAMETER
SYMBOL
θJC
Junction to Case

RATINGS
1.0
UNIT
°C/W
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate- Source Leakage Current
SYMBOL
BVDSS
IDSS
Forward
Reverse
IGSS
TEST CONDITIONS
ID=-250µA, VGS=0V
VDS=-100V, VGS=0V
VGS=+20V
VGS=-20V
MIN TYP MAX UNIT
-100
-1
+100
-100
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=-250µA
-2.0
-4.0
Static Drain-Source On-State Resistance
RDS(ON)
VGS=-10V, ID=-12A (Note 2)
0.2
DYNAMIC PARAMETERS
Input Capacitance
CISS
1400
VDS=-25V, VGS=0V, f=1.0MHz
Output Capacitance
COSS
590
140
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Turn-ON Delay Time
tD(ON)
40
50
VDD=-50V, ID=-12A, RG=9.1Ω,
Rise Time
tR
38
45
RD = 2.4Ω, See Fig. 1(Note 2)
Turn-OFF Delay Time
tD(OFF)
314 330
Fall-Time
tF
66
75
Total Gate Charge
QG
35
40
VDS=-80V, VGS=-10V, ID=-12A,
Gate to Source Charge
QGS
8
See Fig 3 (Note 2)
6
Gate to Drain ("Miller") Charge
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
-12
Maximum Body-Diode Pulsed Current
ISM
(Note 1)
-48
Drain-Source Diode Forward Voltage
VSD
TJ=25°C, IS=-12A,VGS=0V(Note 2)
-5.0
Body Diode Reverse Recovery Time
tRR
130 260
TJ=25°C, IF=-12A,
di/dt=100A/µs (Note 2)
0.35 0.70
Body Diode Reverse Recovery Charge
QRR
Notes: 1. Repetitive rating; pulse width limited by max. junction temperature.
2. Pulse width ≤ 300µs; duty cycle ≤ 2%.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
V
µA
nA
nA
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
A
V
ns
µC
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TEST CIRCUITS AND WAVEFORMS
VGS
VDS
VDS
90%
RG
D.U.T.
RD
-10V
VDD
+

Power MOSFET
Pulse Width≤1μs
Duty Factor≤0.1%
10%
VGS
TD(ON) TR
TD(OFF) TF
Fig. 1a Switching Time Test Circuit
Fig. 1b Switching Time Waveforms
Fig. 2a Unclampled Inductive Test Circuit
Fig. 2b Unclampled Inductive Waveforms
Fig.3a Gate Charge Test Circuit
Fig. 3b Gate Charge Waveform
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UTT12P10
TEST CIRCUITS AND WAVEFORMS(Cont.)
+

Power MOSFET
Notes: 1. Repetitive rating; pulse width limited by max. junction temperature.
2. VDD=-25V, starting TJ=25°C, L=2.7mH, RG=25Ω, IAS=-12A. (See Figure 2)
3. ISD≤-12A, di/dt≤200A/µs, VDD≤BVDSS, TJ≤175°C
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UTT12P10

TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Breakdown Voltage
300
Drain Current vs. Gate Threshold Voltage
300
250
Drain Current, -ID (µA)
Drain Current, -ID (µA)
Power MOSFET
200
150
100
50
0
250
200
150
100
50
0
30
60
90
120
0
0
150
0.5
1
1.5
2
2.5
3
Gate Threshold Voltage, -VTH (V)
Drain Current, -ID (A)
Drain Current, -ID (A)
Drain-Source Breakdown Voltage, -BVDSS (V)
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UTT12P10

Power MOSFET
TYPICAL CHARACTERISTICS
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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www.unisonic.com.tw
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