UNISONIC TECHNOLOGIES CO., LTD UTT15P06 Power MOSFET 15A, 60V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT15P06 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed, cost-effectiveness and minimum on-state resistance. It can also withstand high energy in the avalanche. FEATURES * RDS(ON) < 90mΩ @ VGS = -10V, ID = -15A * High Switching Speed SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTT15P06L-TA3-T UTT15P06G-TA3-T UTT15P06L-TF3-T UTT15P06G-TF3-T UTT15P06L-TM3-T UTT15P06G-TM3-T UTT15P06L-TN3-R UTT15P06G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F TO-251 TO-252 Pin Assignment 1 2 3 G D S G D S G D S G D S Packing Tube Tube Tube Tape Reel MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 3 QW-R502-733.D UTT15P06 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL VDSS VGSS ID IDM RATINGS UNIT -60 V ±25 V Continuous -15 A Drain Current Pulsed -45 A TO-220 40 Power Dissipation TO-220F PD 37 W TO-251/TO-252 31.3 Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. Drain-Source Voltage Gate-Source Voltage THERMAL DATA PARAMETER Junction to Ambient (Steady state) Junction to Case SYMBOL TO-220/TO-220F TO-251/TO-252 TO-220 TO-220F TO-251/TO-252 θJA θJC RATINGS 62 110 3.125 3.3 4 UNIT °C/W °C/W °C/W ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=-250µA, VGS=0V Drain-Source Leakage Current IDSS VDS=-60V, VGS=0V Forward VGS=+25V, VDS=0V Gate-Source Leakage Current IGSS Reverse VGS=-25V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=-250µA Static Drain-Source On-State Resistance RDS(ON) VGS= -10V, ID= -15A (Note 1) DYNAMIC PARAMETERS (Note 2) Input Capacitance CISS VGS=0V, VDS=-25V, f=1.0MHz Output Capacitance COSS (Note 2) Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Turn-ON Delay Time tD(ON) Rise Time tR VDD=-30V, ID=-1A, RG=12.5Ω (Note 3) Turn-OFF Delay Time tD(OFF) Fall-Time tF Total Gate Charge QG VGS=-10V, VDS=-30V, Gate to Source Charge QGS ID=-15A (Note 3) Gate to Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS (TC=25°C) (Note 2) Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IF=-15A, VGS=0V (Note 1) Notes: 1. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. 2. Guaranteed by design, not subject to production testing. 3. Independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT -60 -1 -1 +100 -100 V µA nA nA -3 90 V mΩ 1100 2660 115 90 16 30 50 20 14 3 8 -1.0 27 -15 -45 -1.5 pF pF pF ns ns ns ns nC nC nC A A V 2 of 3 QW-R502-733.D UTT15P06 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R502-733.D