2676

NTE2676
Silicon NPN Transistor
High Voltage, High Speed Switch
TO3P(H)IS Type Package
Features:
D High Breakdown Voltage: VCBO = 1500V Min
D High Switching Speed
D Low Saturation Voltage
Applications:
D Color TV Horizontal Deflection Output
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Collector Power Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +150°C
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector−Emitter Saturation Voltage
VCE(sat)
IC = 6A, IB = 1.5A
−
−
3.0
V
Base−Emitter Saturation Voltage
VBE(sat)
IC = 6A, IB = 1.5A
−
−
1.4
V
Collector Cutoff Current
ICBO
VCB = 1500V, IE = 0
−
−
1.0
mA
Emitter Cutoff Current
IEBO
VEB = 5V, IC = 0
−
−
10
μA
DC Current Gain
hFE
IC = 1A, VCE = 5V
10
−
30
IC = 6A, VCE = 5V
4
−
8
IC = 100mA, VCE = 10V
−
1.7
−
MHz
Current Gain Bandwidth Product
fT
Output Capacitance
COB
IE = 0, VCB = 10V, ftest = 1.0MHz
−
135
−
pF
Storage Time
tstg
ICP = 6A, IB1(end) = 1.5A, fH =
15.75kHz
−
−
11
μs
−
−
0.7
μs
Fall Time
tf
.217 (5.5)
.610 (15.5)
.130 (3.3)
.177
(4.5)
.378
(9.6)
.965
(24.5)
.177
(4.5)
.720
(18.3)
Min
B
.215 (5.47)
C
E
.138 (3.5)