2691

NTE2691 (NPN) & NTE2692 (PNP)
Silicon Complementary Transistors
High Voltage Switch
Features:
D High Breakdown Voltage
D Large Current Capacity
Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180V
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A
Pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5A
Collector Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Maximum Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
ICBO
VCB = 120V, IE = 0
−
−
1
A
Emitter Cutoff Current
IEBO
VEB = 4V, IC = 0
−
−
1
A
DC Current Gain
NTE2691
hFE1
VCE = 5V, IC = 100mA
140
−
280
200
−
400
NTE2692
DC Current Gain
Gain−Bandwidth Product
Output Capacitance
NTE2691
hFE2
VCE = 5V, IC = 10mA
80
−
−
fT
VCE = 10V, IC = 50mA
−
120
−
MHz
Cob
VCB = 10V, f = 1MHz
−
14
−
pF
−
22
−
pF
−
130
450
mV
−
200
500
mV
−
0.85
1.2
V
NTE2692
Collector−Emitter Saturation Voltage
NTE2691
VCE(sat)
IC = 500mA, IB = 50mA
NTE2692
Base−Emitter Saturation Voltage
VBE(sat)
IC = 500mA, IB = 50mA
Electrical Characteristics (Cont’d): (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector−Base Breakdown Voltage
V(BR)CBO IC = 10A, IE = 0
180
−
−
V
Collector−Emitter Breakdown Voltage
V(BR)CEO IC = 1mA, RBE = 
160
−
−
V
Emitter−Base Breakdown Voltage
V(BR)EBO IE = 10A, IC = 0
6
−
−
V
−
40
−
s
−
1.2
−
s
−
0.7
−
s
−
80
−
−
40
−
Turn−On Time
ton
Storage Time
NTE2691
tstg
IC = 10IB1 = −10IB1 = 700mA,
VCC = 100V, Pulse Width = 20s,
Duty Cycle  1%
NTE2692
Fall Time
NTE2691
tf
NTE2692
.098 (2.5)
.271 (6.9)
.040
(1.0)
.177
(4.5)
.079
(2.0)
.161
(4.1)
E
C
B
.100 (2.54)
ns
ns