2695

NTE2695
Silicon PNP Transistor
Low Power Audio Amp
TO−126 Type Package
Description:
The NTE2695 is a silicon PNP transistor in a TO−126 type package designed for low power audio
amplifier and low−current, high−speed switching applications.
Features:
D High Collector−Emitter Sustaining Voltage
D High DC Current Gain at IC = 200mA
D Low Collector−Emitter Saturation Voltage
D High Current Gain Bandwidth Product
D Annular Construction for Low Leakage
Absolute Maximum Ratings: (Note 1)
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15W
Derate above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120mW/C
Total Power Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W
Derate above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12mW/C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.34C/W
Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.4C/W
Note 1. Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions)
and are not valid simultaneously. If these limits are exceeded, device functional operation
is not implied, damage may occur and reliability may be affected.
Electrical Characteristics: (TC = +25C unless otherwise specified))
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
100
−
−
V
−
−
0.1
A
−
−
0.1
A
−
−
0.1
A
IC = 200mA
40
−
180
IC = 1A
15
−
−
IC = 500mA, IB = 50mA
−
−
0.3
V
IC = 1A, IB = 100mA
−
0.6
V
OFF Characteristics
Collector−Emitter Sustaining Voltage
Collector Cutoff Current
VCEO(sus) IC = 10mA, IB = 0
ICBO
VCB = 100V, IE = 0
TC +125C
Emitter Cutoff Current
IEBO
VBE = 7V, IC = 0
hFE
VCE = 1V
ON Characteristics
DC Current Gain
Collector−Emitter Saturation Voltage
VCE(sat)
Base−Emitter Saturation Voltage
VBE(sat)
IC = 2A, IB = 200mA
−
−
1.8
V
Base−Emitter ON Voltage
VBE(on)
IC = 500mA, VCE = 1V
−
−
1.5
V
IC = 100mA, VCE = 10V, ftest = 10MHz
40
−
−
MHz
VCB 10V, IE = 0, f = 0.1MHz
−
−
50
pF
Dynamic Characteristics
Current−Gain−Bandwidth Product
Output Capacitance
fT
Cob
.330 (8.38)
Max
.175
(4.45)
Max
.450
(11.4)
Max
.118 (3.0) Dia
.655
(16.6)
Max
.030 (.762) Dia
E
C
B
.090 (2.28)
.130 (3.3)
Max