2696

NTE2696
Silicon NPN Transistor
Low Noise Audio Amplifier
TO−92 Type Package
(Compl to NTE234)
Description:
The NTE2696 is a silicon NPN transistor in a TO−92 type package designed for use in low frequency
and low noise applications. The function of this device is to lower the noise figure in the region of low
signal source impedance, and to lower the pulse noise. The NTE2696 can also be used in the first
stages of equalizer amplifiers.
Features:
D Low Noise:
NF = 4db (Typ), RG = 100, VCE = 6V, IC = 100A, f = 1kHz
NF = 0.5db (Typ), RG = 1k, VCE = 6V, IC = 100A, f = 1kHz
D Low Pulse Noise: Low l/f Noise
D High DC Current Gain: hFE = 350 to 700
D High Breakdown Voltage: VCEO = 120V
Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA
Collector Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +125C
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
Collector Cutoff Current
ICBO
VCB = 120V, IE = 0
−
−
0.1
A
Emitter Cutoff Current
IEBO
VEB = 5V, IC = 0
−
−
0.1
A
120
−
−
V
Collector−Emitter Breakdown Voltage
V(BR)CEO IC = 1mA, IC = 2mA
Electrical Characteristics (Cont’d): (TA = +25C unless otherwise specified)
Parameter
Symbol
DC Current Gain
Test Conditions
Min
Typ
Max Unit
hFE
VCE = 6V, IC = 2mA
350
−
700
VCE(sat)
IC = 10mA, IB = 1mA
−
−
0.3
V
Base−Emitter Voltage
VBE
VCE = 6V, IC = 2mA
−
0.65
−
V
Transition Frequency
fT
VCE = 6V, IC = 1mA
−
100
−
MHz
−
3.0
−
pF
f = 10Hz, RG = 10k
−
−
6
dB
f = 1kHz, RG = 10k
−
−
2
dB
f = 1kHz, RG = 100
−
4
−
dB
Collector−Emitter Saturation Voltage
Collector Output Capacitance
Cob
VCB = 10V, IE = 0, f = 1MHz
Noise Figure
NF
VCE = 6V,
IC = 0.1mA
.135 (3.45) Min
.210
(5.33)
Max
Seating Plane
.500
(12.7)
Min
.165 (4.2) Max
E C B
.100 (2.54)
.050 (1.27)
.165
(4.2)
Max
.105 (2.67) Max
.205 (5.2) Max
.105 (2.67) Max