2904

NTE2904
MOSFET
N−Ch, Enhancement Mode
High Speed Switch
TO−220 Type Package
Features:
D Advanced Process Technology
D Ultra Low On−Resistance
D Dynamic dv/dt Rating
D +175C Operating Temperature
D Fast Switching
D Fully Avalanche Rated
D
G
S
Absolute Maximum Ratings:
Continuous Drain Current (VGS = 10V), ID
TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64A
TC = +100C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45A
Pulsed Drain Current (Note 1), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 210A
Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7130W
Derate Linearly Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.83W/C
Gate−to−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Avalanche Current (Note 1), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32A
Repetitive Avalanche Energy (Note 1), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13mJ
Peak Diode Recovery dv/dt (Note 3), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0V/ns
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +175C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +175C
Lead Temperature (During Soldering, 1.6mm from case for 10sec), TL . . . . . . . . . . . . . . . . . +300C
Mounting Torque (6−32 or M3 Screw) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 lbfin (1.1Nm)
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.15C/W
Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62C/W
Typical Thermal Resistance, Case−to−Sink (Flat, Greased Surface), RthCS . . . . . . . . . . . . 0.5C/W
Note 1. Repetitive rating; pulse width limited by maximum junction temperature.
Note 2. Starting TJ = +25C, L = 0.37mH, RG = 25W, IAS = 32A
Note 3. ISD 32A, di/dt 220A/ms, VDD V(BR)DSS, TJ +175C
Rev. 7−14
Electrical Characteristics: (TJ = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Drain−to−Source Breakdown Voltage
V(BR)DSS
Breakdown Voltage Temp. Coefficient
DV(BR)DSS Reference to +25C, ID = 1mA
DTJ
VGS = 0V, ID = 250mA
Min
Typ
Max
Unit
55
−
−
V
−
0.058
−
V/C
−
−
0.014
W
Static Drain−to−Source On−Resistance
RDS(on)
VGS = 10V, ID = 32A, Note 4
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250mA
2.0
−
4.0
V
VDS = 25V, ID = 32A, Note 4
24
−
−
mhos
VDS = 55V, VGS = 0V
−
−
25
mA
VDS = 44V, VGS = 0V, TJ = +150C
−
−
250
mA
Forward Transconductance
Drain−to−Source Leakage Current
gfs
IDSS
Gate−to−Source Forward Leakage
IGSS
VGS = 20V
−
−
100
nA
Gate−to−Source Reverse Leakage
IGSS
VGS = −20V
−
−
−100
nA
ID = 32A, VDS = 44V, VGS = 10V
−
−
81
nC
Total Gate Charge
Qg
Gate−to−Source Charge
Qgs
−
−
19
nC
Gate−to−Drain (“Miller”) Charge
Qgd
−
−
30
nC
Turn−On Delay Time
td(on)
−
12
−
ns
−
78
−
ns
td(off)
−
34
−
ns
tf
−
50
−
ns
Between lead, .250in. (6.0) mm from
package and center of die contact
−
4.5
−
nH
−
7.5
−
nH
VGS = 0V, VDS = 25V, f = 1MHz
−
1970
−
pF
Rise Time
tr
Turn−Off Delay Time
Fall Time
VDD = 28V, ID = 32A, RG = 0.85W,
RD = 79 , Note 4
Internal Drain Inductance
LD
Internal Source Inductance
LS
Input Capacitance
Ciss
Output Capacitance
Coss
−
470
−
pF
Reverse Transfer Capacitance
Crss
−
120
−
pF
Single Pulse Avalanche Energy
EAS
mJ
IAS = 32A, L = 0.37mH, Note 2
−
700
190
Note 5
Note 6
Min
Typ
Max
Unit
−
−
64
A
Source−Drain Ratings and Characteristics:
Parameter
Symbol
Continuous Source Current (Body Diode)
IS
Test Conditions
Pulsed Source Current (Body Diode)
ISM
Note 1
−
−
210
A
Diode Forward Voltage
VSD
TJ = +25C, IS = 32A, VGS = 0V,
Note 4
−
−
1.3
V
Reverse Recovery Time
trr
−
68
100
ns
Reverse Recovery Charge
Qrr
TJ = +25C, IF = 32A,
di/dt = 100A/ms, Note 4
−
220
330
mC
Forward Turn−On Time
ton
Note
Note
Note
Note
1.
4.
5.
6.
Intrinsic turn−on time is neglegible (turn−on is dominated by LS+LD)
Repetitive rating; pulse width limited by maximum junction temperature.
Pulse width 400ms; duty cycle 2%.
This is the destructive value not limited to the thermal limit.
This is the thermal limited value.
.420 (10.67)
Max
.110 (2.79)
.147 (3.75) Dia Max
.500
(12.7)
Max
.250 (6.35)
Max
.500
(12.7)
Min
.070 (1.78) Max
Gate
.100 (2.54)
Source
Drain/Tab