2909

NTE2909
MOSFET
N−Channel, Enhancement Mode
High Speed Switch
Description:
The NTE2909 is a Power MOSFET in a TO220 type package that utilizes advanced processing
techniques to achieve extremely low on−resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design provides an extremely efficient and reliable
device for use in a wide variety of applications.
Features:
D Ultra Low ON−Resistance
D Dynamic dv/dt Rating
D +175C Operating Temperature
D Fast Switching
D Fully Avalanche Rated
D
G
S
Absolute Maximum Ratings:
Continuous Drain Current (VGS = 10V), ID
TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57A
TC = +100C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40A
Pulsed Drain Current (Note 1), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 230A
Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200W
Derate Linearly Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3W/C
Gate−to−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Avalanche Current (Note 1), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28A
Repetitive Avalanche Energy (Note 1), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mJ
Peak Diode Recovery dv/dt (Note 2), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.8V/ns
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +175C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +175C
Lead Temperature (During Soldering, 1.6mm from case for 10sec), TL . . . . . . . . . . . . . . . . . +300C
Mounting Torque (6−32 or M3 Screw) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 lbfin (1.1Nm)
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.75C/W
Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62C/W
Typical Thermal Resistance, Case−to−Sink (Flat, Greased Surface), RthCS . . . . . . . . . . . . 0.5C/W
Note 1. Starting TJ = +25C, L = 0.70mH, RG = 25 , IAS = 28A, VGS = 10V.
Note 2. ISD 28A, di/dt 380A/s, VDD V(BR)DSS, TJ +175C
Rev. 10−13
Electrical Characteristics: (TJ = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0V, ID = 250A
Breakdown Voltage Temp. Coefficient
V(BR)DSS Reference to +25C, ID = 1mA
TJ
Min
Typ
Max
Unit
100
−
−
V
−
0.13
−
V/C
−
−
23
m
Static Drain−to−Source On−Resistance
RDS(on)
VGS = 10V, ID = 28A, Note 3
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250A
2.0
−
4.0
V
VDS = 25V, ID = 280A, Note 3
32
−
−
S
VDS = 100V, VGS = 0V
−
−
25
A
VDS = 80V, VGS = 0V, TJ = +150C
−
−
250
A
Forward Transconductance
Drain−to−Source Leakage Current
gfs
IDSS
Gate−to−Source Forward Leakage
IGSS
VGS = 20V
−
−
100
nA
Gate−to−Source Reverse Leakage
IGSS
VGS = −20V
−
−
−100
nA
ID = 28A, VDS = 80V, VGS = 10V
−
−
130
nC
Total Gate Charge
Qg
Gate−to−Source Charge
Qgs
−
−
26
nC
Gate−to−Drain (“Miller”) Charge
Qgd
−
−
43
nC
Turn−On Delay Time
td(on)
−
12
−
ns
−
58
−
ns
td(off)
−
45
−
ns
tf
−
45
−
ns
Between lead, .250in. (6.0) mm from
package and center of die contact
−
4.5
−
nH
−
7.5
−
nH
VGS = 0V, VDS = 25V, f = 1MHz
−
3130
−
pF
Rise Time
tr
Turn−Off Delay Time
Fall Time
VDD = 50V, ID = 28A, RG = 2.5 ,
VGS = 10V, Note 3
Internal Drain Inductance
LD
Internal Source Inductance
LS
Input Capacitance
Ciss
Output Capacitance
Coss
−
410
−
pF
Reverse Transfer Capacitance
Crss
−
72
−
pF
Single Pulse Avalanche Energy
EAS
−
1060
280
mJ
Note 4
Note 5
Min
Typ
Max
Unit
−
−
57
A
IAS = 28A, L = 0.70mH, Note 1
Source−Drain Ratings and Characteristics:
Parameter
Symbol
Continuous Source Current (Body Diode)
IS
Test Conditions
Pulsed Source Current (Body Diode)
ISM
Note 6
−
−
230
A
Diode Forward Voltage
VSD
TJ = +25C, IS = 28A, VGS = 0V,
Note 3
−
−
1.2
V
Reverse Recovery Time
trr
−
140
220
ns
Reverse Recovery Charge
Qrr
TJ = +25C, IF = 28A,
di/dt = 100A/s, Note 3
−
670
1010
C
Forward Turn−On Time
ton
Note
Note
Note
Note
Note
Note
1.
2.
3.
4.
5.
6.
Intrinsic turn−on time is neglegible (turn−on is dominated by LS+LD)
Starting TJ = +25C, L = 0.70mH, RG = 25 , IAS = 28A, VGS = 10V.
ISD 28A, di/dt 380A/s, VDD V(BR)DSS, TJ +175C
Pulse width 400s; duty cycle 2%.
This is a typical value at device destruction and represents operation outside rated limits.
This is a calculated value limited to TJ = +175C.
Repetitive rating: pulse width limited by max. junction temperature.
.420 (10.67)
Max
.110 (2.79)
.147 (3.75) Dia Max
.500
(12.7)
Max
.250 (6.35)
Max
.500
(12.7)
Min
.070 (1.78) Max
Gate
.100 (2.54)
Source
Drain/Tab