644

NTE644 & NTE645
Silicon Rectifier
Fast Recovery, Dual, Common Anode
TO220 Type Package
Description:
The NTE644 and NTE645 are dual, fast recovery, common anode silicon rectifiers in a TO220 type
package designed for special applications such as DC power supplies, inverters, converters, ultrasonic systems, choppers and low RF interference.
Features:
D Low Forward Voltage
D High Current Capability
D Fast Switching for High Efficiency
D High Surge Capacity
D Glass Passivated Chip Junction
Absolute Maximum Ratings:
Peak Repetitive Reverse Voltage, VRRM
NTE644 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE645 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
Working Peak Reverse Voltage, VRWM
NTE644 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE645 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
DC Blocking Voltage, VR
NTE644 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE645 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
RMS Reverse Voltage, VR(RMS)
NTE629 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140V
NTE630 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 420V
Average Rectifier Forward Current (Rated VR, TC = +1505C), IF(AV)
Per Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Total Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A
Non−Repetitive Peak Surge Current, IFSM
(8.3ms Single Half Sine−Wave Superimposed on Rated Load) . . . . . . . . . . . . . . . . . . . . 250A
Operating Junction Temperature Range (Reverse Voltage Applied), TJ . . . . . . . . . . −655 to +1755C
Storage Temperature Range (Reverse Voltage Applied), Tstg . . . . . . . . . . . . . . . . . . . −655 to +1755C
Electrical Characteristics:
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Instantaneous Forward Voltage
VF
IF = 8A
−
−
1.3
V
Instantaneous Reverse Current
IR
At Rated VR, TC = +255C
−
−
10
5A
At Rated VR, TC = +1005C
−
−
250
5A
Junction Capacitance
CP
Note 1
−
50
−
pF
Reverse Recovery Time
NTE644
trr
IF = 0.5A, IR = 1A, irr = 0.25A
−
−
150
ns
−
−
250
ns
NTE645
Note 1. Measured at 1MHz and applied reverse voltage of 4V.
.147 (3.75) Dia Max
.110 (2.79)
.185 (4.7)
.054 (1.38)
.392
(9.95)
.245 (6.22)
A
.608
(15.42)
Max
.040 (1.02)
K
A
K
.500
(12.7)
Min
.100 (52.54)
.018 (0.48)