30131

NTE30131
Infrared Emitting Diode for
Remote Control and Night Vision Applications
T−3 1/4 (10mm) Type Package
Features:
D High Reliability
D Low−Voltage Characteristics
D Narrow Viewing Angle
D Gallium Aluminum Arsenide
D Water Clear Lens
Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Power Dissipation (Per Chip), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mW
Reverse Voltage (Per Chip), VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Forward Current (Per Chip), IF
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Peak (F = 1kHz, Duty Ratio = 0.1%) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −25 to +85C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −25 to +85C
Note 1. IFP Condition: Pulse Width  10ms, Duty Cycle = 10%.
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter
Forward Voltage
Reverse Current
Peak Emission Wavelength
Half Intensity Angle
Symbol
Test Conditions
Min
Typ
Max
Unit
VF
IF = 20mA
1.1
−
1.4
V
IR
p
IF = 100mA
VR = 5V
IF = 20mA
IF = 20mA
−
−
−
−
1.3
−
940
35
1.6
10
−
−
V
A
nm
degree
IF = 20mA
IF = 100mA
VR = 0V, f = 1MHz
IFP = 100mA, f = 1kHz, tp/T = 1%
−
−
−
−
20
100
50
1
−
−
−
−
mw/sr
mw/sr
pF
ns
21/2
Radiant Intensity
IE
Junction Capacity
Rise/Fall Time
Cj
tr/tf
.429 (10.9)
Dia
.392 (9.95) Dia
.535
(13.6)
1.000
(25.4)
Min
Cathode
.100 (2.54) Min