N50
WFP13
P13N50
Silicon N-Channel MOSFET
Features
�
13A,500V, RDS(on)(Max0.46Ω)@VGS=10V
�
Ultra-low Gate charge(Typical 43nC)
�
Fast Switching Capability
�
100%Avalanche Tested
�
Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi’s trench
layout-based process.This technology improves the performances
compared with standard parts from various sources. All of these
power MOSFETs are designed for applications in switching
regulators, switching convertors, motor and relay drivers, and drivers
for high power bipolar switching transistors demanding high speed
and low gate drive power.
Absolute Maximum Ratings
Symbol
VDSS
Parameter
Value
Units
Drain Source Voltage
500
V
Continuous Drain Current(@Tc=25℃)
13
A
Continuous Drain Current(@Tc=100℃)
8
A
52
A
±30
V
ID
IDM
Drain Current Pulsed
(Note1)
VGS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note2)
845
mJ
EAR
Repetitive Avalanche Energy
(Note1)
5
mJ
dv/dt
Peak Diode Recovery dv /dt
(Note3)
3.5
V/ ns
Total Power Dissipation(@Tc=25℃)
195
W
Derating Factor above 25℃
1.56
W/℃
-55~150
℃
300
℃
PD
TJ,Tstg
TL
Junction and Storage Temperature
Channel Temperature
Thermal Characteristics
Symbol
Parameter
Value
Min
Typ
Max
Units
RQJC
Thermal Resistance , Junction -to -Case
-
-
0.64
℃/W
RQCS
Thermal Resistance , Case-to-Sink
-
0.5
-
℃/W
RQJA
Thermal Resistance , Junction-to -Ambient
-
-
62.5
℃/W
Rev.A Nov.2010
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
N50
WFP13
P13N50
Electrical Characteristics(Tc=25℃)
Characteristics
Symbol
Gate leakage current
Gate-source breakdown voltage
Test Condition
Min
Type
Max
Unit
IGSS
VGS=±30V,VDS=0V
-
-
±100
nA
V(BR)GSS
IG=±10 µA,VDS=0V
±30
-
-
V
VDS=500V,VGS=0V
-
-
1
µA
10
µA
Drain cut -off current
IDSS
VDS=400V,TC=125℃
Drain -source breakdown voltage
V(BR)DSS
Breakdown voltage Temperature
△BVDSS/
ID=250 µA,VGS=0V
500
-
-
V
-
0.5
-
V/℃
ID=250µA,Referenced
Coefficient
△TJ
to 25℃
Gate threshold voltage
VGS(th)
VDS=10V,ID=250 µA
3
-
4.5
V
Drain -source ON resistance
RDS(ON)
VGS=10V,ID=6.5A
-
0.37
0.46
Ω
Forward Transconductance
gfs
VDS=50V,ID=6.5A
-
15
-
S
Input capacitance
Ciss
VDS=25V,
-
1580
2055
Reverse transfer capacitance
Crss
VGS=0V,
-
21
26
Output capacitance
Coss
f=1MHz
-
180
235
VDD=250V,
-
25
60
ID=13A
-
100
210
tf
RG=9.1Ω
-
130
270
toff
RD=31Ω
-
100
210
-
43
56
-
7.5
-
-
18.5
-
Min
Type
Max
Rise time
tr
Turn-on time
ton
Switching time
pF
ns
Fall time
Turn-off time
Total gate charge(gate-source
(Note4,5)
VDD=400V,
Qg
plus gate-drain)
VGS=10V,
nC
Gate-source charge
Qgs
Gate-drain("miller") Charge
Qgd
ID=13A
(Note4,5)
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol
Test Condition
Unit
Continuous drain reverse current
IDR
-
-
-
13
A
Pulse drain reverse current
IDRP
-
-
-
52
A
Forward voltage(diode)
VDSF
IDR=13A,VGS=0V
-
-
1.4
V
Reverse recovery time
trr
IDR=13A,VGS=0V,
-
442
633
ns
Reverse recovery charge
Qrr
dIDR / dt =100 A / µs
-
2.16
3.24
µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=500uH IAS=13A,VDD=50V,RG=0Ω,Starting TJ=25℃
3.ISD≤13A,di/dt≤300A/us,VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
2/7
Steady, keep you advance
N50
WFP13
P13N50
Please handle with caution
Fig.1 On State Characteristics
Fig.2 Transfer Characteristics
Fig.3 Capacitance Variation vs
Drain Voltage
Fig.4 Maximum Avalanche Energy
Fig.5 On-Resistance Variation vs
Junction temperature
vs On-State Current
Fig.6 Gate Charge Characteristics
Steady, keep you advance
3/7
N50
WFP13
P13N50
Fig.7 Maximum Safe Operation Area
Fig.8 Maximum Drain Current
vs Case temperature
Fig.9 Transient thermal Response Curve
4/7
Steady, keep you advance
N50
WFP13
P13N50
Fig.10 Gate Test circuit & Waveform
Fig.11 Resistive Switching Test Circuit & Waveform
Fig.12 Unclamped Inductive Switching Test Circuit & Waveform
5/7
Steady, keep you advance
N50
WFP13
P13N50
Fig.13 Peak Diode Recovery dv/dt Test Circuit & Waveform
6/7
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N50
WFP13
P13N50
TO-220 Package Dimension
Unit:mm
7/7
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