20140717083427 6141

WFU4N60
Product Description
Silicon N-Channel MOSFET
D
Features
�
4.0A,600V,RDS(on)(Max2.3Ω)@VGS=10V
�
Ultra-low Gate charge(Typical15nC)
�
Fast Switching Capability
�
100%Avalanche Tested
�
Maximum Junction Temperature Range(150℃)
G
S
General Description
This Power
MOSFET is produced using Winsemi's advanced
planar stripe,VDMOS technology.this latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics .This devices is specially well
suited for half bridge and full bridge resonant topology line a
electronic lamp ballast, high efficiency switched mode power
supplies, active power factor correction.
Absolute Maximum Ratings
Symbol
VDSS
Parameter
Value
Units
Drain Source Voltage
600
V
Continuous Drain Current(@Tc=25℃)
4.0
A
Continuous Drain Current(@Tc=100℃)
2.6*
A
16
A
±30
V
ID
IDM
Drain Current Pulsed
(Note1)
VGS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note2)
240
mJ
EAR
Repetitive Avalanche Energy
(Note1)
10
mJ
dv/dt
Peak Diode Recovery dv /dt
(Note3)
4.5
V/ns
83
W
0.78
W/℃
Total Power Dissipation(@Tc=25℃)
PD
Derating Factor above 25℃
TJ
Junction Temperature
-55~150
℃
Tstg
Storage Temperature
-55~150
℃
TL
Channel Temperature
300
℃
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Value
Parameter
Min
Typ
Max
Units
RQJC
Thermal Resistance , Junction -to -Case
-
-
1.5
℃/W
RQJA
Thermal Resistance , Junction-to -Ambient
-
-
83
℃/W
WT-F072-Rev.A0 Jul 2014
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MICROELECTRONICS
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MICROELECTRONICS
[email protected] Microelectronics Co., Ltd., All right reserved.
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WFU4N60 Product Description
Silicon N-Channel MOSFET
Electrical Characteristics(Tc=25℃)
Characteristics
Symbol
Gate leakage current
Gate-source breakdown voltage
Test Condition
Min
Type
Max
Unit
IGSS
VGS=±30V,VDS=0V
-
-
±100
nA
V(BR)GSS
IG=±10 µA,VDS=0V
±30
-
-
V
VDS=600V,VGS=0V
-
-
10
µA
VDS=500V,Tc=125℃
-
-
100
µA
ID=250 µA,Referenced to 25℃
-
0.65
-
V/℃
Drain Cut -off current
IDSS
Breakdown voltage Temperature coefficient
△BVDSS/△TJ
V(BR)DSS
ID=250 µA,VGS=0V
600
-
-
V
Gate threshold voltage
VGS(th)
VDS=VGS,ID=250 µA
2
-
4
V
Drain -source ON resistance
RDS(ON)
VGS=10V,ID=2.0A
-
-
2.3
Ω
Forward Transconductance
gfs
VDS=40V,ID=2.0A
-
4.7
-
S
Input capacitance
Ciss
VDS=25V,
-
550
720
Reverse transfer capacitance
Crss
VGS=0V,
-
8
11
Output capacitance
Coss
f=1MHz
-
60
80
VDD=325V,
-
35
80
Drain -source breakdown voltage
Turn-on Rise time
tr
Turn-on delay time
Td(on)
ID=4.0A
-
10
30
tf
RG=25Ω
-
40
90
-
60
100
-
15
20
-
2.8
-
-
6
-
Switching time
pF
ns
Turn-off Fall time
Turn-off delay time
(Note4,5)
Td(off)
Total gate charge(gate-source
VDD=480V,
Qg
plus gate-drain)
VGS=10V,
nC
Gate-source charge
Qgs
Gate-drain("miller") Charge
Qgd
ID=4.0A
(Note,5)
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol
Test Condition
Min
Continuous drain reverse current
IDR
-
-
Pulse drain reverse current
IDRP
-
Forward voltage(diode)
VDSF
Reverse recovery time
Reverse recovery charge
Type
Max
Unit
-
4.0
A
-
-
16
A
IDR=4.0A,VGS=0V
-
-
1.4
V
trr
IDR=4.0A,VGS=0V,
-
300
-
ns
Qrr
dIDR /dt =100 A /µs
-
2.2
-
µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=25mH IAS=4.0A,VDD=50V,RG=25Ω,Starting TJ=25℃
3.ISD≤4.0A,di/dt≤200A/us,VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
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WFU4N60 Product Description
Silicon N-Channel MOSFET
VGS
15V
10V
8V
7V
6.5V
6V
5.5V
B ottom 5V
10
To p
150℃
ID[A]
I D [A ]
10
1
25℃
1
Note:
1.250us pulse test
2 . V D S =40V
Note:
1.250us pulse test
2 . Tc=25 ℃
0 .1
1
10
2
4
8
6
V D S [V]
10
V G S [V ]
Fig.2 Transfer Characteristics
Fig.1 On Region Characteristics
10
2 .4
2 .0
I DR[A]
R DS(O N)[ Ω]
2 .2
VG S =10V
1 .8
25℃
150℃
1
1 .6
VG S =20V
1 .4
Note:
1.250us pulse test
2 . VG S =0V
Note:Tj=25℃
0 .1
1 .2
0
1
2
3
4
5
0 .4
6
0 .5
0 .6
0 .7
I D [A]
V GS Gat e Sou rce Voltage[V]
Ca pacit ance[pF ]
1 .3
12
6 .0 X 1 0 2
0 .0
1 .2
Ciss=Cgs+Cgd(Cds =s horted)
Crs s =Cgd
2 .0 X 1 0
1 .1
1 .0
Fig.4 Body Diode Forward Voltage Variation
vs. Source Current and Temperature
2
Coss=Cds+Cgd
4 .0 X 1 0
0 .9
V S D [V]
Fig.3 On-Resistance Variation vs Drain
Current and Gate Voltage
8 .0 X 1 0
0 .8
2
2
10
-1
10
0
10
VD S =480V
10
VD S =300V
V D S =120V
8
6
4
2
0
1
0
V D S [V]
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6
8
10
12
14
Qg Toltal Gate Charge[nC]
Fig.6 Gate Charge Characteristics
Fig.5 Capacitance Characteristics
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WFU4N60 Product Description
1.15
3.0
1.10
2.5
RDS(on) (Normalized)
BVDS (Normalized)
Silicon N-Channel MOSFET
1.05
1.00
0.95
Note:
1.V G S =0V
2 . I D=250uA
0.90
2.0
1.5
1.0
Note:
1.VG S =0V
2. ID =2.0A
0.5
0.0
-7 5
-5 0
-2 5
0
25
50
125
100
75
150
-7 5
-5 0
-2 5
0
25
T j[ ℃ ]
150
100us
4
I D Drain Current[A]
10ms
I D[A]
125
1
1ms
100ms
0
D C
10
100
5
Operation in This Area
is L im ite d b y R D S(on)
10
75
Fig.8 On-Resistance Variation
vs. Temperature
Fig.7 Breakdown Voltage Variation
vs. Temperature
10
50
T j[ ℃ ]
-1
3
2
1
N o t e s:
1 .Tc= 2 5 °C
2 . T J =150°C
3.Single pulse
10
0
-2
10
0
10
1
10
2
10
3
25
50
100
125
150
Fig.10 Maximum Drain Current
vs Case temperature
Fig.9 Maximum Safe Operation Area
10
75
Tc C a s e Te mp e ra tu re [℃ ]
V D S [V ]
0
*N o te :
1.Zθ J C (t)=2.5°C/W Max.
2.Duty Factor,D=t1/t2
3.TJM-TC=PDM* ZθJ C (t)
10
-1
PD M
Single pulse
θ
t1
t2
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Fig.11 Transient thermal Response Curve
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WFU4N60 Product Description
Silicon N-Channel MOSFET
50K Ω
12V
VG S
Same type
as D U T
Qg
200nF
10V
300nF
VD S
VG S
Qg s
Qg d
DUT
3m A
Ch a rg e
Fig.12 Gate Test circuit & Waveform
VD S
RG
RL
VD S
90%
VD D
VG S
VG S
DUT
10V
10%
td(on)
tr
td(off)
to n
tf
to f f
Fig.13 Resistive Switching Test Circuit & Waveform
L
EA S =
VD S
B V DSS
B V D S S - VD D
B V DSS
IA S
ID
RG
VD D
DUT
10V
1
L IA S 2
2
I D( t)
VD S( t )
VD D
tp
tp
Tim e
Fig.14 Unclamped Inductive Switching Test Circuit & Waveform
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WFU4N60 Product Description
Silicon N-Channel MOSFET
DUT
VD S
IS D
L
Driver
RG
S am e Type
as DUT
VG S
VD D
dv/dt controlled by RG
IS D conteolled by pulse period
VG S
D =
(Driver)
Gate Pulse Width
Gate Pulse Period
10V
IF M ,Body Diode Forward Current
IS D
di/dt
(DUT)
IR M
Body Diode Reverse Current
VD S
(DUT)
Body Diode Recovery dv/dt
VD D
VS D
Body Diode
Forward Voltage Drop
Fig.15 Peak Diode Recovery dv/dt Test Circuit & Waveform
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WFU4N60 Product Description
Silicon N-Channel MOSFET
TO-251 Package Dimension
0.852±0.15
2.3±0.20
6.6±0.20
0.508±0.05
6.10±0.20
5.32±0.20
5.0±0.30
3-0.80±0.20
3-0.76±0.10
2.286
光面
1.00±0.10
毛刺面
0.508±0.05
2.286
注:
1.塑封体未标注为光面 Ra=0.1;亚光面 Ra=0.8
2.未注公差±0.15;未标注圆角 Rmax=0.25
3.塑封体无缺损、缩孔、裂纹、气泡等不良缺陷
4.标注单位 mm
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WFU4N60 Product Description
Silicon N-Channel MOSFET
NOTE:
1.We strongly recommend customers check carefully on the trademark when buying our product, if there is any
question, please don't be hesitate to contact us.
2.Please do not exceed the absolute maximum ratings of the device when circuit designing.
3.Winsemi Microelectronics Co., Ltd reserved the right to make changes in this specification sheet and is
subject to change without prior notice.
CONTACT:
Winsemi Microelectronics Co., Ltd.
ADD:Room 1002, East, Phase 2, HighTech Plaza,Tian-An Cyber Park,Che gong miao, FuTian, Shenzhen, P.R.
China.
Post Code : 518040
Tel : +86-755-8250 6288
FAX : +86-755-8250 6299
Web Site : www.winsemi.com
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