20140310023425 9476

WFF12N65 Product Description
Silicon N-Channel MOSFET
Features
D
■ 12A,650V,RDS(on)(Max0.78Ω)@VGS=10V
■ Ultra-low Gate Charge(Typical 39nC)
■ Fast Switching Capability
■ 100%Avalanche Tested
G
■ RoHS product
S
General Description
This Power MOSFET is produced using Winsemi’s advanced planar
stripe, VDMOS technology. This latest technology has been especially
designed to minimize on-state resistance, have a high rugged
avalanche characteristics. This devices is specially well suited for
AC-DC switching power supplies, DC-DC power converters,high
voltage H-bridge motor drive PWM
Absolute Maximum Ratings
Symbol
Parameter
VDSS
Value
Units
Drain Source Voltage
650
V
Continuous Drain Current(@Tc=25℃)
12*
A
Continuous Drain Current(@Tc=100℃)
7.6*
A
48*
A
±30
V
880
mJ
12
A
ID
IDM
Drain Current Pulsed
(Note1)
VGS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
IAR
EAR
Repetitive Avalanche Energy
(Note 1)
25
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
51
W
0.41
W/℃
-55~150
℃
300
℃
Total Power Dissipation(@Tc=25℃)
PD
Derating Factor above 25℃
TJ, Tstg
Junction and Storage Temperature
Channel Temperature
TL
* Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Value
Parameter
Min
Typ
Max
Units
RQJC
Thermal Resistance, Junction-to-Case
-
-
2.45
℃/W
RQJA
Thermal Resistance, Junction-to-Ambient
-
-
62.5
℃/W
WT-F057-Rev.A1 Jan.2014
WINSEM I
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WINSEM I
M ICROELECTRONICS
[email protected] Microelectronics Co., Ltd., All right reserved.
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WFF12N65 Product Description
Silicon N-Channel MOSFET
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Gate leakage current
Test Condition
Min
Type
Max
Unit
-
-
±100
nA
±30
-
-
V
VDS = 650 V, VGS = 0 V
-
-
1
μA
VDS = 520 V, Tc = 125℃
-
-
10
μA
VGS = ±30 V, VDS = 0 V
IGSS
Gate−source breakdown
IG = ±10 μA, VDS = 0 V
V(BR)GSS
voltage
Drain cut−off current
IDSS
Drain−source breakdown
V(BR)DSS
ID = 250 μA, VGS = 0 V
650
-
-
V
Gate threshold voltage
VGS(th)
VDS = 10 V, ID =250 μA
3
-
4.5
V
Drain−source ON resistance
RDS(ON)
VGS = 10 V, ID = 6A
-
0.71
0.78
Ω
Forward Transconductance
gfs
VDS = 40 V, ID = 6A
-
13
-
S
Input capacitance
Ciss
VDS = 25 V,
-
1790
2410
Reverse transfer capacitance
Crss
VGS = 0 V,
-
23
31
Output capacitance
Coss
f = 1 MHz
-
175
229
VDD =300 V,
-
133
175
-
78
102
-
104
160
-
233
305
-
39
52
-
8.5
-
-
20
-
voltage
Turn-On Rise time
Switching
Turn-on delay time
tr
ID =12A
Td(on)
ns
RG=25 Ω
time
Turn-On Fall time
tf
Turn-off delay time
Td(off)
pF
(Note4,5)
Total gate charge (gate−source plus
VDD = 480 V,
Qg
gate−drain)
VGS = 10 V,
Gate−source charge
Qgs
Gate−drain (“miller”) Charge
Qgd
nC
ID = 12 A
(Note4,5)
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Type
Max
Unit
Continuous drain reverse current
IDR
-
-
-
12
A
Pulse drain reverse current
IDRP
-
-
-
48
A
Forward voltage (diode)
VDSF
IDR = 12 A, VGS = 0 V
-
-
1.4
V
Reverse recovery time
trr
IDR = 12 A, VGS = 0 V,
-
418
-
ns
Reverse recovery charge
Qrr
dIDR / dt = 100 A / μs
-
4.85
-
μC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=11.2mH,IAS=12A,VDD=50V,RG=25Ω,Starting TJ=25℃
3.ISD≤12A,di/dt≤300A/us, VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test: Pulse Width≤300us,Duty Cycle≤2%
5.Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
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WFF12N65 Product Description
Silicon N-Channel MOSFET
VG S
To p
15V
10V
8V
7V
6 .5 V
6V
5 .5 V
B o tto m 5 V
。
25 C
。
150 C
I D [A ]
I D [A]
10
10
1
N o te s:
1 .2 5 0 u s p u lse te st
2 .Tc=2 5 。
C
1
1
N otes:
1.250us pulse test
2.V D S =40V
0 .1
10
2
4
6
V D S [V]
8
10
VG S [V]
Fig.2 Transfer Characteristics
Fig.1 On-Region Characteristics
0 .8 5
0 .8 0
10
V G S =1 0 V
0 .7 0
2 5 °C
I DR [A]
R DS(on)[Ω]
0 .7 5
0 .6 5
1
1 5 0 °C
V G S =2 0 V
0 .6 0
0 .5 5
Notes:
1.250µs pulse test
2.V G S =0V
N o t e : Tj = 2 5° C
0 .5 0
0
2
4
6
8
10
12
14
16
18
20
0.1
0.1
0.2
0.3
0.4
0.5
0.6
0.7
I D [A]
0.8
0.9
1.0
1.1
1.2
1.3
1.4
V S D [V]
Fig.3 On-Resistance variation
vs Drain Current and Gate
Voltage
Fig.4 Body Diode Forward Voltage
Variation with Source Current and
Temperature
12
3000
Ci ss=Cg s+Cg d (Cd s=sh o rte d )
VD S =480V
Co ss=Cd s+Cg d
Crss=Cg d
2500
10
2000
C iss
1500
1000
C oss
500
N o te :
1 .V G S =0 V
2 .f=1 MH z
C rs s
0
10
V GS G ate S ou rce Volta ge [V ]
Ca pacit an ce [pF ]
VD S =300V
8
VD S =120V
6
4
2
0
-1
10
0
10
0
1
10
Fig.5 Capacitance Characteristics
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30
40
Qg Toltal Gate Charge[nC]
V D S [V]
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Fig.6 Gate Charge Characteristics
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WFF12N65 Product Description
Silicon N-Channel MOSFET
1 .2
3 .0
BV DS(Normalixed)
2 .5
R DS(on) (Normalized)
1 .1
1 .0
0 .9
2 .0
1 .5
1 .0
Notes:
1.V G S =0V
2.I D=250µA
0 .8
-7 5
-5 0
-2 5
25
0
50
75
100
125
Notes:
1.VG S =10V
2.I D=6.0A
0 .5
0 .0
-75
150
-50
-25
25
0
TJ [°C]
50
75
100
125
150
TJ [°C]
Fig.7 Breakdown Voltage Variation
vs. Temperature
Fig.8 On-Resistance Variation
vs. Temperature
14
Operation in This Area
is limite d b y R D S (o n )
10
12
2
I D Drain Current[A]
I D DrainCurrent[A]
10µs
100µs
10
1
1ms
10ms
10
0
10
8
6
4
1 0 0 ms
10
Notes:
1 . Tc =25。C
。
2.TJ=150 C
3.Single pulse
-1
10
0
10
VD S
2
DC
1
102
Drain-Source Voltage[V]
10
0
25
3
50
100
125
150
Fig.10 Maximum Drain Current
vs Case Temperature
Fig.9 Maximum Safe Operation Area
ZθJC (t),Thermal Response
75
。
Tc Case Temperature[ C ]
D=0.5
1
0 .2
0 .1
* N o te:
0 .1
。
1.Zθ J C (t)=2.45 C /W Max.
2.D uty Factor,D =t1/t2
3.T JM-T C=P DM* Zθ J C (t)
0 .0 5
0 .0 2
0 .0 1
PD M
t1
Single pulse
t2
0.01
1 E -5
1 E-4
1 E-3
0.01
1
0.1
10
t1 ,Square Wave Pulse Duration [sec]
Fig.11 Transient Thermal Response curve
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WFF12N65 Product Description
Silicon N-Channel MOSFET
50K Ω
12V
VG S
Same type
as D U T
Qg
200nF
10V
300nF
VD S
VG S
Qg s
Qg d
DUT
3m A
Ch a rg e
Fig.12 Gate Test circuit & Waveform
VD S
RG
RL
VD S
90%
VD D
VG S
VG S
DUT
10V
10%
td(on)
tr
td(off)
to n
tf
to f f
Fig.13 Resistive Switching Test Circuit & Waveform
L
EA S =
VD S
B V DSS
B V D S S - VD D
B V DSS
IA S
ID
RG
VD D
DUT
10V
1
L IA S 2
2
I D( t)
VD S( t )
VD D
tp
tp
Tim e
Fig.14 Uncamped Inductive Switching Test Circuit & Waveform
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WFF12N65 Product Description
Silicon N-Channel MOSFET
DUT
VD S
IS D
L
Driver
RG
S am e Type
as DUT
VG S
VD D
dv/dt controlled by RG
IS D conteolled by pulse period
VG S
Gate Pulse Width
Gate Pulse Period
D =
(Driver)
10V
IF M ,Body Diode Forward Current
IS D
di/dt
(DUT)
IR M
Body Diode Reverse Current
VD S
(DUT)
Body Diode Recovery dv/dt
VD D
VS D
Body Diode
Forward Voltage Drop
Fig.15 Peak Diode Recovery dv/dt Test Circuit & Waveform
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WFF12N65 Product Description
Silicon N-Channel MOSFET
TO-220F Package Dimension
U n it:m m
E
符 号
Symbol
M IN
M AX
A
4 .5
4 .9
B
-
1 .4 7
b
0 .7
0 .9
c
0 .4 5
0 .6
D
1 5 .6 7
1 6 .0 7
E
9 .9 6
1 0 .3 6
Q
F
L2
D
P
e
L
B
b
C
2.54TYPE
F
2 .3 4
2 .7 4
L
1 2 .5 8
1 3 .3 8
L2
3 .1 3
3 .3 3
ФP
3 .0 8
3 .2 8
Q
3 .2
3 .4
Q1
2 .5 6
2 .9 6
Q1
e
A
e
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WFF12N65 Product Description
Silicon N-Channel MOSFET
NOTE:
1.We strongly recommend customers check carefully on the trademark when buying our product, if there is any
question, please don't be hesitate to contact us.
2.Please do not exceed the absolute maximum ratings of the device when circuit designing.
3.Winsemi Microelectronics Co., Ltd reserved the right to make changes in this specification sheet and is
subject to change without prior notice.
CONTACT:
Winsemi Microelectronics Co., Ltd.
ADD:Futian District, ShenZhen Tian An Cyber Tech Plaza two East Wing 1002
Post Code : 518040
Tel : +86-755-8250 6288
FAX : +86-755-8250 6299
Web Site : www.winsemi.com
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