20160307062947 6675

WFF12N65L Product Description
Silicon N-Channel MOSFET
Features
D
�
12A,650V,RDS(on)(Max0.8Ω)@VGS=10V
�
Ultra-low Gate charge(Typical 40nC)
�
Fast Switching Capability
�
100%Avalanche Tested
�
Enhanced EMI capability
�
Maximum Junction Temperature Range(150℃)
G
S
General Description
This Power MOSFET is N channel enhanced high voltage power MOS field effect
transistor fabrication by F-CellTM planar high pressure VDMOS process technology. this
product have lower resistance,Superior switching performance and high EAS capability.
The product can be widely used in AC-DC switching power supply, DC-DC power
converter, and high H bridge PWM motor drive.
Absolute Maximum Ratings
Symbol
VDSS
Parameter
Value
Units
Drain Source Voltage
650
V
Continuous Drain Current(@Tc=25℃)
12
A
Continuous Drain Current(@Tc=100℃)
7.5
A
48
A
±30
V
ID
IDM
Drain Current Pulsed
(Note1)
VGS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note2)
550
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note3)
5
V/ns
42
W
0.34
W/℃
-55~150
℃
Total Power Dissipation(@Tc=25℃)
PD
Derating Factor above 25℃
TJ,Tstg
Junction and Storage Temperature
Thermal Characteristics
Value
Symbol
Parameter
Min
Typ
Max
Units
RQJC
Thermal Resistance , Junction -to -Case
-
-
3.0
℃/W
RQJA
Thermal Resistance , Junction-to -Ambient
-
-
62.5
℃/W
WT-F118-Rev.A0 Nov 2015(F0)
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WFF12N65L
Product Description
Silicon N-Channel MOSFET
Electrical Characteristics(Tc=25℃)
Characteristics
Symbol
Gate leakage current
Gate-source breakdown voltage
Drain Cut -off current
Test Condition
Min
Type
Max
Unit
IGSS
VGS=±30V,VDS=0V
-
-
±100
nA
V(BR)GSS
IG=±10 µA,VDS=0V
±30
-
-
V
VDS=650V,VGS=0V
-
-
1
µA
VDS=520V,Tc=125℃
-
-
100
µA
IDSS
Drain -source breakdown voltage
V(BR)DSS
ID=250 µA,VGS=0V
650
-
-
V
Gate threshold voltage
VGS(th)
VDS=VGS,ID=250 µA
2
-
4
V
Drain -source ON resistance
RDS(ON)
VGS=10V,ID=6A
-
0.66
0.8
Ω
Forward Transconductance
gfs
VDS=15V,ID=6A
-
12
-
S
Input capacitance
Ciss
VDS=25V,
-
1994
-
Reverse transfer capacitance
Crss
VGS=0V,
-
9.5
-
Output capacitance
Coss
f=1MHz
-
161
-
VDD=325V,
-
26
-
Turn-on Rise time
tr
Turn-on delay time
Td(on)
ID=12A
-
27
-
tf
RG=10Ω
-
46
-
-
65
-
-
40
-
-
11
-
-
13
-
Switching time
pF
ns
Turn-off Fall time
(Note3,4)
Td(off)
Turn-off delay time
Total gate charge(gate-source
VDD=520V,
Qg
plus gate-drain)
VGS=10V,
nC
Gate-source charge
Qgs
Gate-drain("miller") Charge
Qgd
ID=12A
(Note3,4)
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol
Test Condition
Min
Type
Max
Unit
Continuous drain reverse current
IDR
-
-
-
12
A
Pulse drain reverse current
IDRP
-
-
-
48
A
Forward voltage(diode)
VDSF
-
-
1.5
V
Reverse recovery time
trr
-
652
-
ns
-
4.3
-
µC
-
13.2
-
A
IDR=12A,VGS=0V
IDR=12A,VGS=0V,
Reverse recovery charge
Qrr
dIDR /dt =100 A /µs
Reverse recovery current
Irrm
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=10mH IAS=10.5A,VDD=50V,RG=25Ω,Starting TJ=25℃
3.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
4. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
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WFF12N65L
Product Description
Silicon N-Channel MOSFET
24
30
Notes :
1.250µs pulse test
2.Tc =25°C
VG S =10V
25
VG S =7V
18
I D[ A]
I D[ A]
20
VG S =6V
12
15
10
VG S =5V
6
25°C
150°C
0
0
10
5
15
0
25
20
N otes:
1.250µs pulse test
2.V D S =20V
5
VG S =4.5V
2
6
4
V D S [V ]
10
V G S [V ]
Fig.2 Transfer Characteristics
Fig.1 Output Characteristics
1 .0
16
0 .9
12
IDR[A]
RD S(ON)[ Ω]
8
0 .8
VG S =1 0V
8
25°C
150°C
0 .7
4
Note:Tc =25°C
0 .6
0
3
0
6
12
9
0
0 .2
0 .4
0 .6
I D [A]
1 .2
Fig.4 Body Diode Transfer Characteristics
12
Ciss=Cgs+Cgd(Cds=shorted)
Coss=Cds+Cgd
C rss= C gd
10
1000
520V
325V
C is s
130V
100
C os s
VGS (V)
8
pF
1 .0
VS D [V ]
Fig.3 Drain to Source ON Resistance vs
Drain Current
10000
0 .8
6
4
10
2
Note:
1.VG S =0V
2.f=1MHz
C rs s
Note: I D=12A
0
1
0 .1
10
1
0
100
10
VD S [V ]
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40
50
Q g(nC)
Fig.5 Capacitance vs Drain to source
Voltage
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Fig.6 Gate Charge vs Gate to source
Voltage
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WFF12N65L
Product Description
Silicon N-Channel MOSFET
2 .5
1.15
2 .2 5
2 .0
RDS(ON)
BV DSS
1.05
0.95
1 .7 5
1 .5
1 .2 5
0.85
1 .0
N ote:
1.V G S =0V
2.ID =250uA
0.75
-5 5
-3 0
20
-5
45
70
95
120
145
N ote:
1.V G S = 0V
2.I D= 6A
0 .7 5
0 .5
-5 0
170
0
50
TJ ( ° C )
TJ ( ° C )
Fig.7 Breakdown Voltage vs Junction
Temperature
10
150
100
Fig.8 Drian to Source On-Resistance vs
Junction Temperature
2
18
100µs
1 01
12
10ms
1 00
I D[A]
I D[A]
1ms
DC
O p e ra t io n in Th is A re a
is L im it e d b y RDS(ON)
1 0 -1
6
No t e s:
1 .Tc= 2 5 °C
2 . T J =150°C
3.Single pulse
0
1 0 -2
1 00
1 01
0
1 03
1 02
25
50
75
100
125
V D S [V]
Tc( ° C )
Fig.9 Maximum Forward Bias Safe
Operatiing Area
Fig.10 Maximum Continuous Drain
Current vs Case temperature
150
10
D=1
0.5
ZθJA(t),Thermal Response
1
0.2
0.1
0.05
0.1
0.02
0.01
0.01
*N o t e:
1.D uty Factor,D = t1/t2
2.T JM = PDM * RθJ A + TA
S in g le p u lse
0.001
PD
M
t1
t2
0.0001
0.000001
0. 00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1 S q u a r e W a v e P u l s e D u r a t i o n [ s e c ]
Fig.11 Maximum Effective Thermal Impendance Junction to Case
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WFF12N65L
Product Description
Silicon N-Channel MOSFET
50K Ω
12V
VG S
Same type
as D U T
Qg
200nF
10V
300nF
VD S
VG S
Qg s
Qg d
DUT
3m A
Ch a rg e
Fig.12 Gate Test circuit & Waveform
VD S
RG
RL
VD S
90%
VD D
VG S
VG S
DUT
10V
10%
td(on)
tr
td(off)
to n
tf
to f f
Fig.13 Resistive Switching Test Circuit & Waveform
L
EA S =
VD S
B V DSS
B V D S S - VD D
B V DSS
IA S
ID
RG
VD D
DUT
10V
1
L IA S 2
2
I D( t)
VD S( t )
VD D
tp
tp
Tim e
Fig.14 Unclamped Inductive Switching Test Circuit & Waveform
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WFF12N65L
Product Description
Silicon N-Channel MOSFET
DUT
VD S
IS D
L
Driver
RG
S am e Type
as DUT
VG S
VD D
dv/dt controlled by RG
IS D conteolled by pulse period
VG S
D =
(Driver)
Gate Pulse Width
Gate Pulse Period
10V
IF M ,Body Diode Forward Current
IS D
di/dt
(DUT)
IR M
Body Diode Reverse Current
VD S
(DUT)
Body Diode Recovery dv/dt
VD D
VS D
Body Diode
Forward Voltage Drop
Fig.15 Peak Diode Recovery dv/dt Test Circuit & Waveform
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WFF12N65L
Product Description
Silicon N-Channel MOSFET
TO-220F Package Dimension
U n it:m m
E
符 号
Symbol
M IN
MAX
A
4 .5
4 .9
B
-
1 .4 7
b
0 .7
0 .9
c
0 .4 5
0 .6
D
1 5 .6 7
1 6 .0 7
E
9 .9 6
1 0 .3 6
Q
F
L2
D
P
e
L
B
b
C
2.54TYPE
F
2 .3 4
2 .7 4
L
1 2 .5 8
1 3 .3 8
L2
3 .1 3
3 .3 3
ФP
3 .0 8
3 .2 8
Q
3 .2
3 .4
Q1
2 .5 6
2 .9 6
Q1
e
A
e
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WFF12N65L
Product Description
Silicon N-Channel MOSFET
NOTE:
1.We strongly recommend customers check carefully on the trademark when buying our product, if there is any
question, please don't be hesitate to contact us.
2.Please do not exceed the absolute maximum ratings of the device when circuit designing.
3.Winsemi Microelectronics Co., Ltd reserved the right to make changes in this specification sheet and is
subject to change without prior notice.
CONTACT:
Winsemi Microelectronics Co., Ltd.
ADD:Room 1002, East, Phase 2, HighTech Plaza,Tian-An Cyber Park,Che gong miao, FuTian, Shenzhen, P.R.
China.
Post Code : 518040
Tel : +86-755-8250 6288
FAX : +86-755-8250 6299
Web Site : www.winsemi.com
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