3041

NTE3041
Optoisolator
NPN Transistor Output
Description:
The NTE3041 is an optoisolator in a 6−Lead DIP type package consisting of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector.
Features:
D High Current Transfer Ratio: 100% Min @ Spec Conditions
D Guaranteed Switching Speeds
Applications:
D General Purpose Switching Circuits
D Interfacing and Coupling Systems of Different Potentials and Impedances
D Regulation Feedback Circuits
D Monitor & Detection Circuits
D Solid State Relays
Absolute Maximum Ratings: (TA = +255C unless otherwise specified)
Input LED
Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Continuous Forward Current, IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60mA
LED Power Dissipation (With Negligible Power in Output Detector), PD . . . . . . . . . . . . . . . . 120mW
Derate Above 255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.41mW/5C
Output Transistor
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150mA
Detector Power Dissipation (With Negligible Power in Output Detector), PD . . . . . . . . . . . . 150mW
Derate Above 255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.76mW/5C
Total Device
Isolation Source Voltage (Peak AC Voltage, 60Hz, 1sec Duration, Note 1), VISO . . . . . . . . . . 7500V
Total Device Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mW
Derate Above 255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.94mW/5C
Operating Ambient Temperature Range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1005C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1505C
Lead Temperature (During Soldering, 1/16” from case, 10sec), TL . . . . . . . . . . . . . . . . . . . . . +2605C
Note 1. Isolation Surge Voltage is an internal device dielectric breakdown rating. For this test, Pin1
and Pin2 are common, and Pin4, Pin5, and Pin6 are common.
Rev. 2−14
Electrical Characteristics: (TA = +255C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
IF = 10mA
0.8
1.15
1.5
V
IF = 10mA, TA = −555C
0.9
1.3
1.7
V
IF = 10mA, TA = +1005C
0.7
1.05
1.4
V
Input LED
Forward Voltage
VF
Reverse Leakage Current
IR
VR = 6V
−
−
10
A
Capacitance
CJ
V = 0, f = 1MHz
−
18
−
pF
VCE = 10V
−
1
50
nA
VCE = 30V, TA = +1005C
−
−
500
A
VCB = 10V
−
0.2
20
nA
VCB = 10V, TA = +1005C
−
100
−
nA
Output Transistor
Collector−Emitter Dark Current
Collector−Base Dark Current
ICEO
ICBO
Collector−Emitter Breakdown Voltage
V(BR)CEO
IC = 1mA
30
45
−
V
Collector−Base Breakdown Voltage
V(BR)CBO
IC = 100 A
70
100
−
V
Emitter−Base Breakdown Voltage
V(BR)EBO
IE = 100 A
7.0
7.8
−
V
DC Current Gain
hFE
IC = 2mA, VCE = 5V
−
400
−
Collector−Emitter Capacitance
CCE
VCE = 5V, f = 1MHz
−
7
−
pF
Collector−Base Capacitance
CCB
VCB = 0, f = 1MHz
−
19
−
pF
Emitter−Base Capacitance
CEB
VEB = 0, f = 1MHz
−
9
−
pF
IF = 10mA, VCE = 10V
10
30
−
mA
IF = 10mA, VCE = 10V, TA = −555C
4
−
−
mA
IF = 10mA, VCE = 10V, TA = +1005C
4
−
−
mA
IC = 0.5mA, IF = 10mA
−
0.14
0.3
V
IC = 2mA, VCC = 10V, RL = 1005
−
7.5
10
s
Coupled
Output Collector Current
Collector−Emitter Saturation Voltage
IC
VCE(sat)
Turn−On Time
ton
Turn−Off Time
toff
−
5.7
10
s
Rise Time
tr
−
3.2
−
s
Fall Time
tf
−
4.7
−
s
7500
−
−
V
−
−
100
A
1011
−
−
5
−
0.2
2.0
pF
Isolation Voltage
VISO
f = 60Hz, t = 1sec
Isolation Current
IISO
VI−O = 3550Vpk
Isolation Resistance
RISO
V = 500V
Isolation Capacitance
CISO
V = 0, f = 1MHz
Pin Connection Diagram
Base
Anode
1
6
Cathode
2
5 Collector
N.C.
3
4 Emitter
6
1
5
4
2
3
.260
(6.6)
Max
.070 (1.78) Max
.350 (8.89)
Max
.200 (5.08)
Max
.085 (2.16) Max
.300 (7.62)
.350
(8.89)
Max
.100 (2.45)
NOTE: Pin1 locator dot is for reference ONLY.
For additional Pin1 location options, click here.