SiHG22N 6 0 S, SiHP22N 6 0 S, SiHB22N 6 0 S, SiHF22N 6 0 S Super Junction Technology in TO-220, TO-247, TO-220F, and TO-263 Packages Key Benefits • • • • • • • • • • • Dramatic reduction of maximum RDS(on) at VGS = 10 V: 0.190 Ω Ultra-low gate charge: Qg = 98 nC Increased efficiency for SMPS High E AR capability Low figure-of-merit (FOM) Ron x Qg 100% avalanche tested High peak current capability dV/dt ruggedness Effective COSS specified Improved transconductance High power dissipation capability APPLICATIONS • Power factor correction (PFC) and pulse width modulation (PWM) in a wide range of electronics including: º LCD TVs º PCs º Servers º Switchmode power supplies (SMPS) ºTelecom systems w w w. v i s h a y. c o m Datasheets are available on our web site at www.vishay.com for 600-V MOSFETs - http://www.vishay.com/doc?91373, 91393, 91394, 91395 Product Sheet New 600-V MOSFETs with Super Junction Technology p o w e r m o s f e ts High-Voltage Power MOSFETs G D G D S S N-Channel MOSFET N-Channel S MOSFET S D D 0.190 0.190 AR SiHP22N60S-E3 TO-220 FULLPAK TO-220 SiHF22N60S-E3 TO-220 TO-220 TC = 25 °C VGS at 10 V 25 °C °C T TC= =100 VGS at 10 V C TC = 100 °C TJ, Tstg PEDAR PD dV/dt TJdV/dt , Tstg EAS EEAR AS IDM IDM VGS ID ID SYMBOL VDS VVGS DS W/°C W/°C mJ mJ W W V/ns 265 2 690 690 25 300 - 55 to7.3 + 150 - 55300 to + 150 25 250 250 7.3 www.vishay.com 1 www.vishay.com 1 V/ns °C °C A A 22 13 13 65 ±600 20 ± 20 22 UNIT UNIT V V TO-220 650 Single • Effective Coss Specified • dV/dt Ruggedness • High Peak Current Capability • 100 % Avalanche Tested S 0.190 FEATURES • High Power Dissipation Capability For technical questions, contact [email protected] TO-220 • Effective Coss Specified • dV/dt Ruggedness • High Peak Current Capability • 100 % Avalanche Tested SiHP22N60S-E3 • Improved trr/Qrr ORDERING INFORMATION • Improved Gate Charge c • High EAR Capability • Compliant to RoHS Directive LIMIT 2002/95/EC SYMBOL 2 65 PD 250 25 V/ns W mJ W/°C D • Effective Coss Specified 250 TO-247 PD Charge • Improved Gate ORDERING INFORMATION TO-247 2 • TO-220 Improved Transconductance FULLPAK EAS 690 • SiHF22N60S-E3 Improved trrE/Q 25 ARrr W mJ W/°C AR VGS PD 25 250 7.3 PD dV/dt 690 2 65 13 22 ± 20 600 - 55 to + 150 LIMIT 300 7.3 250 25 690 2 65 13 22 V/ns W VMN-PT0192-1002 mJ W/°C A www.vishay.com UNIT°C 1 V V/ns W mJ W/°C A 600 SiHB22N60S-E3 V ± 20 EAR EAS IDM ID dV/dt Peak Diode Recovery dV/dt * Pb containing terminations are not RoHS compliant, exemptions may apply ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Operating Junction and Storage Temperature Range TJ, Tstg Document Number: 91393 PARAMETER SYMBOL e for 10 s Soldering Recommendations (Peak Temperature) S09-2398-Rev. B, 16-Nov-09 Drain-Source Voltage VDS Notes d Maximum Power Dissipation Voltage Lead (Pb)-free VDS NotesDrain-Source S S a. Limited by maximum junction temperature. Gate-Source Voltage VGS b. Repetitive rating; pulse width limited by maximum junction temperature. T = 25 °C N-Channel MOSFET C at10 10A. V ID Continuous Drain Current = 50 V, starting TJ = 25 a°C, L = 13.8 mH, Rg = 25 Ω,VIAS c. VDD GS = TC = 100 °C d. ISD ≤ 22 A, dI/dt ≤ 340 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. b Pulsed Drain Current I DM e. 1.6 mm from case. ORDERING INFORMATION Linear Derating Factor Package D2PAK (TO-263) E Single Pulse Avalanche Energyc AS Lead (Pb)-freeAvalanche Energyb SiHB22N60S-E3 E Repetitive G d dV/dt 7.3 V/ns Peak Diode Recovery dV/dt * Pb containing terminations are not RoHS compliant, exemptions may apply• High Power Dissipation Capability G 2PAK (TO-263) ABSOLUTE MAXIMUM RATINGS unless otherwise Operating Junction and Storage Temperature Range TC = 25 °C,Package TJ, Tnoted - 55 to + D 150 stg °C Document Number: 91373 www.vishay.com • Compliant to RoHS Directive 2002/95/EC PARAMETER SYMBOL LIMIT UNIT1 for 10 s 300 Soldering Recommendations (Peak Temperature)e D 16-Nov-09 S09-2398-Rev. B, Maximum Power Dissipation Lead (Pb)-free Repetitive Avalanche Energyb ORDERING INFORMATION Linear Derating Factor D2PAK (TO-263) Package Single Pulse Avalanche Energyc FULLPAK °C VDS at TJ max. (V) 650 • Compliant to RoHS Directive PARAMETER SYMBOL LIMIT UNIT for 10 s 3002002/95/EC Soldering Recommendations (Peak Temperature)e • Lower Figure-of-Merit Ron x Qg RDS(on) (Ω) VGS = 10 V 0.190 600 SiHF22N60S-E3 Drain-Source Voltage Lead (Pb)-freeVDS Notes V 98 Qg (Max.) (nC) • 100 % Avalanche Tested a. Gate-Source Limited by maximum Voltage junction temperature. VGS ± 20 S 17 junction temperature. gs (nC) rating; pulse width limited b. Q Repetitive G D Sby maximum • High Peak Current Capability T = 25 °C 22 C N-ChannelatMOSFET V A. ID Current = 50 V,Drain starting TJ = a25 °C, L = 13.8 mH,25 Rg = 25VΩ, = 10 c. Continuous Vgd Q GSIAS 10 DD(nC) °C Ruggedness 13 TC = 100 A • dV/dt ≤ 150 °C. d. Configuration ISD ≤ 22 A, dI/dt ≤ 340 A/µs, VDD ≤ VDS, TJ Single b IDM 65 e. Pulsed 1.6 mmDrain from Current case. Peak Diode Recovery dV/dtd V SiHB22N60S A Vishay Siliconix • Improved Gate Charge ORDERING INFORMATION TO-220 SiHG22N60S-E3 EAR • Improved trr/Qrr AS D Power MOSFET • Improved TO-247 E Transconductance 690 • Effective Coss Specified TO-220 IDM • dV/dt Ruggedness TC = 25 •°CHigh Peak Current Capability 22 ID 13 TC = 100 °C • 100 % Avalanche Tested ± 20 VGS Qg SiHG22N60S-E3 • Lower Figure-of-Merit Ron x600 VDS Lead (Pb)-free FEATURES dV/dt 7.3 PRODUCT SUMMARY • High Power Dissipation Capability G TC = 25 °C, unless otherwise ABSOLUTE RATINGS noted Operating JunctionMAXIMUM and Storage Temperature Range - 55 to + TO-220 150 J, Tstg • High EARTCapability Package Maximum Power Dissipation Package Single Pulse Avalanche Energy TO-220 FULLPAK Lead (Pb)-free Repetitive Avalanche Energyb ORDERING INFORMATION Linear Derating Factor 25 GS S Single 98 17 0.190 Configuration Pulsed Drain Currentb VGS = 10 V N-Channel V MOSFET at 10 V S Qgs (nC) Continuous Drain Currenta Qgd (nC) G D UNIT Vishay Siliconix SiHF22N60S • Compliant to RoHS Directive 2002/95/EC • Lower Figure-of-Merit Ron x Qg SiHP22N60S-E3 Lead (Pb)-free Package • High EAR Capability • Improved Transconductance TO-220 Power MOSFET D • Improved trr/Qrr ORDERING INFORMATION • Improved Gate Charge Vishay Siliconix SiHG22N60S Vishay Siliconix SiHF22N60S Vishay Siliconix FEATURES •otherwise High Power Dissipation Capability PRODUCTMAXIMUM SUMMARY G ABSOLUTE RATINGS TC = 25 °C, unless noted Package TO-247 VDS at TJ max. (V) PARAMETER RDS(on) (Ω)Voltage Drain-Source (nC) Qg (Max.)Voltage Gate-Source TO-247 Lead (Pb)-free Package ORDERING INFORMATION Configuration • High EAR Capability • Lower Figure-of-Merit Ron x Qg • Improved Transconductance Power MOSFET D 0.190 N-Channel MOSFET 98 25 VGS = 10 V 17 S 650 Qgd (nC) G D G Single 25 17 98 650 Qgs (nC) Qg (Max.) (nC) RDS(on) (Ω) VDS at TJ max. (V) PRODUCT SUMMARY Configuration Qgd (nC) Qgs (nC) Qg (Max.) (nC) VGS = 10 V FEATURES Power MOSFET Voltage DISCLAIMER All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all personsGate-Source acting on its or their behalf (collectively, “Vishay”), disclaim any a. Limited by maximum junction temperature. and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising b. outRepetitive of the userating; or application oflimited any product described herein or TC = 25 °C pulse width by maximum junction temperature. a at Continuous Drain Currentbut GSexpressed of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of including limited to the warranty starting TJ =not 25 °C, L = 13.8 mH, Rg =V25 Ω, 10 IASV= 10TCA.= 100 °C c. purchase, VDD = 50 V, therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct The≤b products not°C. designed for 22 A, dI/dt 340 A/µs, shown VDD ≤ Vherein ≤ 150 d. ISDof≤ Vishay. DS, TJ are Pulsed Drain Current use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use ine.such applications 1.6 mm from case.do so entirely at their own risk and agree to D2PAK fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed Linear Derating Factor for such applications. Product names and (TO-263) markings noted herein may be trademarks of their respective owners. Single Pulse Avalanche Energyc Repetitive Avalanche Energyb D2PAK Maximum Power Dissipation (TO-263) * Pb containing terminations are not RoHS compliant, exemptions may apply Peak Diode Recovery dV/dtd * Pb containing terminations are not RoHS compliant, exemptions may apply * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91394 SPending-Rev. A, 10-Dec-09 Work-in-Progress Document Number: 91373 S09-2398-Rev. B, 16-Nov-09 for 10 s for 10 s Soldering Recommendations (Peak Temperature)e Notes a.Notes Limited by maximum junction temperature. b.a. Repetitive rating; pulse width limited by maximum junction temperature. Limited by maximum junction temperature. starting TJ =width 25 °C,limited L = 13.8 mH, Rg = 25 Ω, IAStemperature. = 10 A. c.b. VRepetitive pulse by maximum junction DD = 50 V,rating; ≤ 22 A,V, dI/dt ≤ 340TA/µs, , TJmH, ≤ 150 d.c. ISD = 50 starting LV =DS 13.8 Rg°C. = 25 Ω, IAS = 10 A. VDD DD ≤ J = 25V°C, e.d. 1.6 case. ≤ 22from A, dI/dt ≤ 340 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. ISDmm e. 1.6 mm from case. d Peak Diode Recovery Operating Junction and dV/dt Storage Temperature Range e OperatingRecommendations Junction and Storage Temperature Range Soldering (Peak Temperature) RepetitivePower Avalanche Energyb Maximum Dissipation Maximum Dissipation Peak DiodePower Recovery dV/dtd LinearPulse Derating Factor Energyc Single Avalanche c b Single Pulse Avalanche Energy Repetitive Avalanche Energy Gate-Source Voltage Continuous Drain Currenta Continuous Drain Currenta Pulsed Drain Currentb PulsedDerating Drain Current Linear Factorb PARAMETER Drain-Source Voltage Drain-SourceVoltage Voltage Gate-Source VDS at TJ max. (V) PRODUCT SUMMARY RDS(on) (Ω) Power MOSFETs LIMIT LIMIT 600 • Compliant to RoHS Directive 2002/95/EC Improved Charge Capability • • High PowerGate Dissipation High Power Capability • • Compliant to Dissipation RoHS Directive 2002/95/EC Improvedt Transconductance • • Improved rr/Qrr ImprovedGate trr/QrrCharge • • Improved dV/dt Ruggedness • • Effective Coss Specified Effective Transconductance Coss Specified • • Improved 100 Peak % Avalanche • • High Current Tested Capability High Ruggedness Peak Current Capability • • dV/dt High EFigure-of-Merit AR Capability R x Q • • Lower on g Lower Figure-of-Merit Ron x Qg • • 100 % Avalanche Tested ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL Package Lead (Pb)-free Lead (Pb)-free G G 25 Single Single 98 17 17 25 650 VGS = 10 V 650 VGS = 10 V 98 ORDERING INFORMATION ORDERING INFORMATION Package TO-220 TO-220 FULLPAK Configuration (Max.) (nC) QQgsg (nC) (nC) QQgdgs(nC) Qgd (nC) Configuration TJ max. (V) RVDS(on) DS at (Ω) (Max.)(Ω) (nC) QRgDS(on) PRODUCT SUMMARY SUMMARY VPRODUCT DS at TJ max. (V) FEATURES • FEATURES High E Capability Power MOSFET Power MOSFET SiHF22N60S SiHP22N60S Vishay Siliconix Vishay Siliconix Revision 10-Dec-09