V i s h ay I n t e r t e c h n o l o g y, I n c . Power MOSFETs MOSFETs - Save Space, Increase Performance SkyFET® Integrated MOSFET and Schottky Diode Solution Key Benefits • • • • Increases efficiency for DC/DC converter applications Reduces space and solution cost by eliminating external Schottky diodes Ideal low-side switch for synchronous rectification Reduces power losses linked to the body diode of the MOSFET APPLICATIONS • • • • • oint of load (POL) P Synchronous rectification VRM Synchronous buck low side for core voltages Graphics cards Resources • For the latest list of devices and datasheets: http://www.vishay.com/mosfets/skyfet/ • More featured products: http://www.vishay.com/landingpage/tradeshows/ powermanagement/2011/mosfets.html • For technical questions contact [email protected] One of the World’s Largest Manufacturers of Discrete Semiconductors and Passive Components PRODUCT SHEET 1/2 VMN-PT0104-1302 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V i s h ay I n t e r t e c h n o l o g y, I n c . Power MOSFETs SkyFET Efficiency Performance, 300 kHz VIN = 19 V, VOUT = 1.3 V Standard TrenchFET SkyFET® Industry FET + Schottky SkyFET Efficiency (%) 93 92 91 90 89 88 87 86 85 84 83 82 81 80 SkyFET® MOSFETs are ideal for increasing efficiency at light loads and6 at higher frequencies, thus 18 reducing power 3 9 12 15 21 losses in servers, notebooks, and VRMs. Their low VF and Qrr provide an advantage overIOUT standard trench MOSFETs Load Current, (A) that can be seen from the efficiency comparsions below at 300 kHz and 1 MHz. SkyFET Efficiency Performance, 1 MHz SkyFET Efficiency Performance, 300 kHz VIN = 19 V, VOUT = 1.3 V VIN = 19 V, VOUT = 1.3 V 93 92 91 90 89 88 87 86 85 84 83 82 81 80 Industry FET + Schottky 3 6 9 12 15 Load Current, IOUT (A) 18 21 SkyFET Efficiency Performance, 1 MHz V = 19 V, VOUT = 1.3 VVDS IN Part Number Standard TrenchFET 86 85 84 83 82 81 80 79 78 77 76 75 74 73 72 71 70 Standard TrenchFET SkyFET Efficiency (%) Efficiency (%) Standard TrenchFET VGS (V) (V) Industry FET + Schottky SkyFET 86 85 84 83 82 81 80 79 78 77 76 75 74 73 72 71 70 3 6 RDS(on) (Ω) VGS = 10 V VGS = 4.5 V 9 Industry FET + Schottky 12 15 Load Current, IOUT (A) Qg (nC) SkyFET 18 21 VGS = 4.5 V Qrr (nC) Samples Available Single MOSFET and Schottky Diode Efficiency (%) MOSFETs - Save Space, Increase Performance SkyFET MOSFET and Schottky Diode PowerPAK® SO-8 3 Si7792DP 30 20 0.0021 0.0026 41 27 SiR798DP 30 20 0.00205 0.003 41.6 30 Available SiR774DP 30 20 0.0026 0.0034 28.5 17.5 Available SiR788DP 6 9 12 30 15 Si7774DPLoad Current, IOUT (A)30 18 20 0.0034 0.0043 24 10.5 Available 20 0.0038 0.0047 21.5 11 Available 21 Si7748DP 30 20 0.0048 0.0066 27.8 13 Available Si7772DP 30 20 0.013 0.0165 8.3 7 Available Si4628DY 30 20 0.003 0.0038 27.5 21 Available Si4774DY 30 20 0.0095 0.012 9.5 7.5 Available Si4712DY 30 20 0.013 0.0165 8.3 7 Available Si4776DY 30 20 0.016 0.02 5.5 4.5 Available SiS778DN 30 20 0.005 0.0062 13.3 8 Available SiS782DN 30 20 0.0095 0.012 9.5 7.5 Available SiS780DN 30 20 0.0135 0.0175 7.3 5 Available tbd Q113 SO-8 PowerPAK 1212-8 Dual MOSFETs and Schottky Diode PowerPAIR® SiZ914DT* 1 30 20 0.00600 0.00900 7.6 2 30 20 0.00137 0.00189 43.2 * target specification For a list of latest devices, see http://www.vishay.com/mosfets/skyfet/ PRODUCT SHEET 2/2 VMN-PT0104-1302 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000