Vishay Intertechnology, Inc. LOW AND MEDIUM VOLTAGE N-CHANNEL MOSFET s TrenchFET® GEN IV High-Performance MOSFETs from 30 V to 60 V ThunderFET® High-Performance MOSFETs from 80 V to 200 V PowerPAK® SC-70 PowerPAK SC-75 High-Performance MOSFETs from 60 V to 150 V in Ultra-Compact, Thermally Enhanced Packages www.vishay.com V I S H AY I N T E R T E C H N O L O G Y, I N C . LOW AND MEDIUM VOLTAGE N-CHANNEL MOSFETs Focus Products Single N-Channel MOSFETs - 30 V to 80 V PowerPAK® RDS(on) (Ω) Qg (nC) VDS (V) 30 LITTLE FOOT® SO-8 / SO-8L 1212-8 / 1212-8S ChipFET SC-70 SO-8 TSOP6 5x6 3x3 3 x 1.9 2x2 5x6 3x3 VGS = 10 V VGS = 4.5 V VGS = 10 V 0.001 0.00135 147 66 SiRA00DP 0.002 0.0027 78 34.3 SiRA02DP 0.00215 0.0031 51 22.5 SiRA04DP SiSA04DN 0.0025 0.0035 51 22.5 SiRA06DP SiS476DN 0.0028 0.0042 37 17.3 SiRA36DP 0.0034 0.0044 51 22.5 0.0037 0.005 34 15.4 SiRA10DP SiSA10DN 0.0043 0.006 29.5 13.6 SiRA12DP SiSA12ADN 0.0051 0.0085 19.4 9.4 SiRA14DP SiSA14DN 0.0064 0.0085 19.7 8.8 0.0067 0.0098 16.7 8 SiRA34DP 0.0075 0.012 14.3 6.9 SiRA18DP ® VGS = 4.5 V Si4010DY Si5446DU SiSA18ADN Increases power density and operates cooler with reduced power loss; RDS(on) down to less than 1 mΩ 40 60 0.002 0.0025 60 28.5 SiR640ADP 0.0024 0.003 56 27.2 SiR642DP 0.0027 0.004 47 21.3 SiR644DP 0.0024 0.0032 58 28 0.0055 0.0075 21.3 9.8 0.0027 0.0035 64 30 0.0042 0.0069 40 18.8 0.008 0.0125 20.8 9.3 0.0085 0.0125 20.8 8.7 0.032 0.052 6.2 3 Si4038DY SiS488DN SiR662DP Si4062DY SiJ462DP SiS862DN SiA442DJ Increase efficiency for synchronous rectification; low Qgd / Qgs ratio enhances immunity to shoot-through 80 0.0055 0.0087 57 25 SiR826ADP 0.0063 0.0089 47.5 24 SiR880ADP 0.0062 0.0095 47 24 SiJ482DP 0.008 0.0115 35.5 17.1 SiJ478DP 0.0195 0.032 18.1 8.7 0.093 0.126 4.9 2.6 SiS468DN Si3476DV* Improves efficiency of isolated DC/DC; PowerPAK SO-8L option offers additional relief under thermal stress Note * Target specification, release in Q4 2014 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V I S H AY I N T E R T E C H N O L O G Y, I N C . LOW AND MEDIUM VOLTAGE N-CHANNEL MOSFETs Focus Products Single N-Channel MOSFETs - 100 V to 150 V PowerPAK® RDS(on) (Ω) Qg (nC) VDS (V) 1212-8 / 1212-8S SC-70 SC-75 SO-8 SSOT23 / SC70-6 5x6 3x3 2x2 1.6 x 1.6 5x6 3x3/2x2 VGS = 4.5 V VGS = 10 V VGS = 4.5 V 0.0066 0.0105 53.5 25.2 SiR870ADP 44 26.7 SiR846ADP SiR882ADP 0.0087 0.0115 39.5 19.5 0.0088 0.012 44.4 20.7 0.0091 100 SO-8 / SO-8L VGS = 10 V 0.0078 36.9 Si4190ADY SiJ470DP 0.0108 0.0145 32.8 16.3 SiR876ADP 0.0140 0.0180 27.9 13.9 SiR878ADP 16 10 0.0210 LITTLE FOOT® 0.0230 0.0310 19.6 9.7 0.0235 0.0315 19.1 9.5 0.0830 0.130 6.5 3.5 0.126 0.189 5.2 2.9 0.185 0.310 3.3 1.8 0.200 0.320 3.3 1.8 SiSS40DN Si7456DDP Si4056DY SiS890DN SiA416DJ Si2392ADS SiB456DK Si1480DH Reduce all power loss elements in ZVS isolated DC/DC topologies; thermally enhanced solution down to 4 mm² package footprint 150 200 0.018 42.5 0.058 9.5 0.177 5.3 0.029 30 SiR872DP SiS888DN SiA446DJ SiR690DP** 48 % RDS - Qg FOM reduction to improve performance in DC/DC, solar micro inverters, and class-D amplifiers Note ** Target specification, release in Q1 2015 Dual N-Channel MOSFETs and N & P Complementary MOSFETs Approximate Footprint Package PowerPAK SO-8 RDS(on) (Ω) Qg (nC) Part Number Configurations VDS (V) Si7252DP Dual 100 0.017 17.5 Si7946ADP* Dual 150 0.186 5.3 100 0.085 5.2 100 0.057 0.072 7.5 -100 0.183 0.205 24 VGS = 10 V VGS = 4.5 V VGS = 10 V 5x6 PowerPAK 1212-8 3x3 SiS990DN Dual SO-8 5x6 Si4590DY N&P Integrated solution reduces component count in DC/DC conversion and BLDC motors Note * Target specification, release in Q4 2014 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 LATEST TECHNOLOGIES PROVIDE GREATER THAN 50 % LOWER ON-RESISTANCE COMPARED TO PREVIOUS GENERATION Advantages of Vishay Siliconix Low and Medium Voltage N-Channel MOSFETs • 30 % lower RDS(on) x Qg FOM enables lower power losses than previous generation • Exceptionally low Qgd / Qgs ratios enhance immunity to shoot-through • Includes thermally enhanced PowerPAK® packaging for increased power densities • A wide range of compact package sizes for optimization in a variety of applications For the Following Applications Vishay’s new n-channel MOSFETs with optimized RDS(on), Qgd and QOSS increase efficiency by balancing conduction and switching power losses • DC/DC converters • DC/AC inverters • Synchronous rectification • ORing, eFuse Providing high-performance, thermally enhanced power stage solutions for today’s power conversion topologies An extensive range of solutions to achieve high efficiency and reliability Useful Links • www.vishay.com/mosfets/trenchfet-gen-iv/ • www.vishay.com/mosfets/medium-voltage/ Vishay is your true one-stop shop for building blocks in power conversion by providing high performance MOSFETs from 30 V to 650 V and power passive components. A WORLD OF SOLUTIONS VMN-MS6926-1406