Vishay Intertechnology, Inc. P-CHANNEL GEN III MOSFETs PowerPAK® Thermally Enhanced, High Current Handling Capability LITTLE FOOT® Wide Range of Battery Operated Applications MICRO FOOT® Best RDS(on) per Outline Area DUAL P-CHANNELS Thermally Enhanced, Space Saving Solutions www.vishay.com V I S H AY I N T E R T E C H N O L O G Y, I N C . P-CHANNEL GEN III MOSFETs Focus Products Single P-Channel MOSFETs - PowerPAK® Package Approx. Outline (mm x mm) PowerPAK SO-8 5x6 PowerPAK 1212-8S 3x3 PowerPAK ChipFET 3x2 PowerPAK SC-70 PowerPAK SC-75 2x2 1.6 x 1.6 VDS (V) VGS (V) Si7157DP -20 12 Si7145DP -30 20 Part Number SiSS23DN -20 8 Si7655ADN -20 12 Si5411EDU -12 Si5415AEDU SiA447DJ RDS(on) (Ω) VGS = 10 V VGS = 4.5 V VGS = 2.5 V 0.0016 0.002 0.0032 0.0026 0.00375 VGS = 1.8 V VGS = 1.5 V 0.0045 0.0063 0.0048 0.0085 8 0.0082 0.0117 -20 8 0.0096 0.0132 0.022 -12 8 0.0135 0.0194 0.0344 0.071 SiA437DJ -20 8 0.0145 0.0205 0.033 0.065 SiA445EDJ -20 12 0.0165 0.03 0.0036 0.0185 0.0115 0.0206 SiA453EDJ -30 12 0.0235 0.0377 SiB441EDK -12 8 0.0255 0.036 0.06 0.115 SiB457EDK -20 8 0.035 0.049 0.079 0.157 Note Thermally enhanced PowerPAK runs cooler and enables high current handling capability Dual P-Channel MOSFETs Approx. Outline (mm x mm) Part Number PowerPAK SO-8 5x6 PowerPAK SC-70 2x2 Package VDS (V) VGS (V) Si7997DP -30 20 SiA923AEDJ -20 8 SiA929DJ -30 12 RDS(on) (Ω) VGS = 10 V VGS = 4.5 V 0.0055 0.0078 0.064 VGS = 2.5 V VGS = 1.8 V VGS = 1.5 V 0.054 0.07 0.104 0.165 0.078 0.12 VGS = 2.5 V VGS = 1.8 V VGS = 1.5 V 0.063 0.0675 0.15 0.13 0.188 Note Thermally enhanced, space saving solutions for battery and charging switches Single P-Channel MOSFETs - LITTLE FOOT® Package SO-8 Approx. Outline (mm x mm) Part Number 5x6 TSOP-6 3x3 SOT-23 VDS (V) VGS (V) Si4497DY -30 Si3421DV RDS(on) (Ω) VGS = 10 V VGS = 4.5 V 20 0.0033 0.0046 -30 20 0.0192 0.027 Si2333DDS Si2365EDS Si2371EDS -12 -20 -30 8 8 12 0.045 0.028 0.032 0.053 0.04 0.041 0.08 0.054 0.062 0.085 0.078 0.098 SC70-6 2x2 Si1443EDH -30 12 SC89-6 1.6 x 1.6 Si1077X -20 8 Note Available in a wide range of specifications to meet requirements of battery operated applications THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V I S H AY I N T E R T E C H N O L O G Y, I N C . P-CHANNEL GEN III MOSFETs Focus Products Single P-Channel MOSFETs - MICRO FOOT® Approx. Outline (mm x mm) Part Number Power MICRO FOOT 2.4 x 2 2.4 x 2 MICRO FOOT 1.6 x 1.6 1.6 x 1.6 Package MICRO FOOT 1.5 x 1 1.5 x 1 VDS (V) VGS (V) Si8851EDB -20 Si8425DB RDS(on) (Ω) VGS = 10 V VGS = 4.5 V VGS = 2.5 V VGS = 1.8 V 8 0.008 0.011 0.0185 -20 10 0.023 0.027 0.04 Si8487DB -30 12 0.035 0.045 Si8483DB -12 10 0.026 0.035 0.055 Si8499DB -20 12 0.032 0.046 0.12 Si8497DB -30 12 0.053 0.071 0.054 0.082 0.076 0.1 0.031 VGS = 1.5 V 0.092 MICRO FOOT 1x1 1x1 Si8489EDB -20 12 MICRO FOOT 0.8 x 0.8 0.8 x 0.8 Si8817DB -20 8 VDS (V) VGS (V) -30 12 VDS (V) VGS (V) -12 8 VDS (V) VGS (V) VGS = 4.5 V VGS = 2.5 V VGS = 1.8 V VGS = 1.5 V 12 8 0.029 0.034 0.044 0.065 -12 8 0.041 0.06 0.11 0.174 12 8 0.028 0.033 0.042 -20 8 0.054 0.07 0.104 0.044 0.145 0.32 VGS = 1.8 V VGS = 1.5 V VGS = 1.5 V Note Best RDS(on) per outline area Single P-Channel MOSFET Plus Integrated Schottky Package PowerPAK SC-70 Approx. Outline (mm x mm) Part Number 2x2 SiA817EDJ RDS(on) (Ω) VGS = 10 V VGS = 4.5 V VGS = 2.5 V 0.065 0.08 0.125 Note Multi-purpose solution for non-synchronous DC/DC applications Level Shift Package SC70-6 Approx. Outline (mm x mm) Part Number 2x2 Si1865DDL RDS(on) (Ω) VGS = 10 V VGS = 4.5 V VGS = 2.5 V VGS = 1.8 V 0.2 0.3 0.508 Note Minimize PCB usage for gate drive circuit and DC/DC applications N-Channel and P-Channel MOSFET Pairs Package PowerPAK SC-70 Approx. Outline (mm x mm) Part Number SiA527DJ 2x2 SiA537EDJ RDS(on) (Ω) VGS = 10 V 0.165 Note Space saving solutions for buck converters and load switches THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 LOWEST ON-RESISTANCE PER AREA FOR P-CHANNEL MOSFETs: DOWN TO HALF OF PREVIOUS INDUSTRY BEST Advantages of Vishay P-Channel Gen III MOSFETs • Lowest on-resistance per area enables the smallest PCBs • Lower voltage drops increase efficiency and battery run time • Dual devices offer the potential for reduced component count in typical battery charger designs For the Following Applications • • • • • Load switches Adaptor switches Battery switches DC motors Charger switches P-channel Gen III’s low on-resistance enables low conduction losses to save power and extend battery usage per charge A variety of package sizes and on-resistance ratings accommodates a wide range of applications Useful Links Also Available • P-channel Gen III MOSFETs www.vishay.com/mosfets/geniii-p/ • P-channel MOSFETs with on-resistance ratings down to 1.2 V www.vishay.com/mosfets/12-rated-on-res/ • Medical Hi-Rel p-channel MOSFETs www.vishay.com/mosfets/medical-mosfets/ A WORLD OF SOLUTIONS VMN-MS6912-1406