IRF9230, IRF9231, IRF9232, IRF9233 Semiconductor -5.5A and -6.5A, -150V and -200V, 0.8 and 1.2 Ohm, P-Channel Power MOSFETs January 1998 Features Description • -5.5A and -6.5A, -150V and -200V These devices are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. • rDS(ON) = 0.8Ω and 1.2Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Formerly Developmental type TA17512. Symbol Ordering Information D PART NUMBER PACKAGE BRAND IRF9230 TO-204AA IRF9230 IRF9231 TO-204AA IRF9231 IRF9232 TO-204AA IRF9232 IRF9233 TO-204AA IRF9233 G S NOTE: When ordering, use the entire part number. Packaging JEDEC TO-204AA DRAIN (FLANGE) SOURCE (PIN 2) GATE (PIN 1) CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 1997 6-1 File Number 2226.1 IRF9230, IRF9231, IRF9232, IRF9233 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain to Source Breakdown Voltage (Note 1). . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . VDGRVGS Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . .IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . EAS Operating and Storage Temperature . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . .TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . Tpkg IRF9230 -200 -200 -6.5 -4.0 -26 ±20 75 0.6 500 -55 to 150 IRF9231 -150 -150 -6.5 -4.0 -26 ±20 75 0.6 500 -55 to 150 IRF9232 -200 -200 -5.5 -3.5 -22 ±20 75 0.6 500 -55 to 150 IRF9233 -150 -150 -5.5 -3.5 -22 ±20 75 0.6 500 -55 to 150 UNITS V V A A A V W W/oC mJ oC 300 260 300 260 300 260 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to TJ = 125oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER MIN TYP MAX UNITS IRF9230, IRF9232 -200 - - V IRF9231, IRF9233 -150 - - V VGS = VDS, ID = -250µA -2 - -4 V VDS = Rated BVDSS, VGS = 0V - - -25 µA VDS = 0.8 x Rated BVDSS, VGS = 0V TC = 125oC - - -250 µA -6.5 - - A -5.5 - - A - - ±100 nA IRF9230, IRF9231 - 0.5 0.8 Ω IRF9232, IRF9233 - 0.8 1.2 Ω Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current On-State Drain Current (Note 2) SYMBOL BVDSS VGS(TH) IDSS ID(ON) IRF9230, IRF9231 TEST CONDITIONS ID = -250µA, VGS = 0V, (Figure10) VDS > ID(ON) x rDS(ON) MAX, VGS = -10V, (Figure 7) IRF9232, IRF9233 Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Forward Transconductance (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate to Source + Gate to Drain) IGSS rDS(ON) VGS = ±20V ID = -3.5A, VGS = -10V, (Figures 8, 9) gfs VDS > ID(ON) x rDS(ON) MAX, ID = -3.5A, (Figure 12) 2.2 3.5 - S td(ON) VDD = 0.5 x Rated BVDSS, ID ≈ -6.5A, RG = 50Ω, VGS = -10V, (Figure 17, 18) RL = 14.7Ω for VDSS = 200V RL = 10.9Ω for VDSS = 150V MOSFET Switching Times are Essentially Independent of Operating Temperature - 30 50 ns - 50 100 ns - 50 100 ns - 40 80 ns - 31 45 nC - 18 - nC - 13 - nC tr td(OFF) tf Qg(TOT) Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd VGS = -10V, ID = -6.5A, VDS = 0.8 x Rated BVDSS, (Figures 14, 19, 20) Gate Charge is Essentially Independent of Operating Temperature 6-2 IRF9230, IRF9231, IRF9232, IRF9233 Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS - 550 - pF Input Capacitance CISS Output Capacitance COSS - 170 - pF Reverse Transfer Capacitance CRSS - 50 - pF - 5.0 - nH - 12.5 - nH - - 1.67 oC/W - - 60 oC/W MIN TYP MAX UNITS - - -6.5 A - - -26 A TC = 25oC, ISD = -6.5A, VGS = 0V, (Figure 13) - - -1.5 V trr TJ = 150oC, ISD = -6.5A, dISD/dt = 100A/µs - 400 - ns QRR TJ = 150oC, ISD = -6.5A, dISD/dt = 100A/µs - 2.6 - µC Internal Drain Inductance Internal Source Inductance LD LS VDS = -25V, VGS = 0V, f = 1MHz, (Figure 11) Measured Between the Contact Screw on the Flange that is Closer to Source and Gate Pins and the Center of Die Modified MOSFET Symbol Showing the Internal Devices Inductances D LD Measured From the Source Lead, 6mm (0.25in) From the Flange and the Source Bonding Pad G LS S Thermal Resistance Junction to Case RθJC Thermal Resistance Junction to Ambient RθJA Typical Socket Mount Source to Drain Diode Specifications PARAMETER Continuous Source to Drain Current Pulse Source to Drain Current (Note 3) SYMBOL ISD ISDM TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode D G S Source to Drain Diode Voltage (Note 2) Reverse Recovery Time Reverse Recovery Charge VSD NOTES: 2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 50V, starting TJ = 25oC, L = 17.75mH, RG = 25Ω, peak IAS = 6.5A (Figures 15, 16). 6-3 IRF9230, IRF9231, IRF9232, IRF9233 Typical Performance Curves Unless Otherwise Specified POWER DISSIPATION MULTIPLIER 1.2 -10 1.0 ID, DRAIN CURRENT (A) -8 0.8 0.6 0.4 -4 IRF9232, IRF9233 -2 0.2 0 0.0 0 25 50 75 100 TA , CASE TEMPERATURE (oC) 125 25 150 50 100 75 125 150 TC, CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE ZθJC, NORMALIZED TRANSIENT THERMAL IMPEDANCE (oC/W) IRF9230, IRF9231 -6 FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 1 0.5 0.2 0.1 PDM 0.1 0.05 0.02 0.01 t1 t2 SINGLE PULSE 0.01 10-5 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC 10-4 10-3 10-2 10-1 1 10 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE -100 -15 IRF9232, 3 -10 IRF9230, 1 10µs 100µs IRF9232, 3 1ms -1 -0.1 -1 10ms 100ms DC TC = 25oC TJ = MAX RATED VGS = -9V VGS = -10V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) IRF9230, 1 OPERATION IN THIS AREA IS LIMITED BY rDS(ON) VGS = -8V 80µs PULSE TEST -12 VGS = -7V -9 VGS = -6V -6 VGS = -5V -3 VGS = -4V IRF9231, 3 IRF9230, 2 -10 -100 VDS, DRAIN TO SOURCE VOLTAGE (V) 0 -1000 0 -10 -20 -30 -40 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS 6-4 -50 IRF9230, IRF9231, IRF9232, IRF9233 Typical Performance Curves Unless Otherwise Specified (Continued) -15 -15 ID(ON), ON-STATE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 80µsPULSE TEST VGS = -10V -12 VGS = -9V VGS = -8V -9 -6 VGS = -7V VGS = -6V -3 VGS = -5V VGS = -4V 0 0 -4 -2 -6 -8 80µs PULSE TEST VDS ≥ I D(ON) x rDS(ON) MAX -12 TJ = 125oC TJ = 25oC -9 TJ = -55oC -6 -3 0 -10 0 -2 -4 -6 -8 VGS, GATE TO SOURCE VOLTAGE (V) VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 7. TRANSFER CHARACTERISTICS 2.0 2.5 2.0µs PULSE TEST VGS = -10V, ID = -2.0A NORMALIZED DRAIN TO SOURCE ON RESISTANCE DRAIN TO SOURCE ON RESISTANCE (Ω) FIGURE 6. SATURATION CHARACTERISTICS 1.6 1.2 VGS = - 10V 0.8 VGS = - 20V 0.4 0 0 -5 -10 -15 ID, DRAIN CURRENT (A) -20 2.0 1.5 1.0 0.5 0 -40 -25 0 40 80 120 160 TJ , JUNCTION TEMPERATURE (oC) NOTE: Heating effect of 2µs pulse is minimal. FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT 1.25 2000 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS ≈ CDS + CGD ID = 250µA 1600 1.15 C, CAPACITANCE (pF) NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE -10 1.05 0.95 0.85 1200 800 CISS 400 COSS CRSS 0.75 -40 0 40 80 120 0 160 TJ , JUNCTION TEMPERATURE (oC) 0 -10 -20 -30 -40 -50 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 6-5 IRF9230, IRF9231, IRF9232, IRF9233 Typical Performance Curves Unless Otherwise Specified (Continued) -100 80µs PULSE TEST VDS > ID(ON) x rDS(ON)MAX ISD, DRAIN CURRENT (A) 5.6 TJ = -55oC TJ = 25oC 4.2 TJ = 125oC 2.8 1.4 0 0 -3 -6 -9 -12 TJ = 150oC -10 TJ = 25oC -1.0 -0.1 -0.4 -15 I D , DRAIN CURRENT (A) -0.8 -0.6 -1.0 -1.4 -1.6 FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE 0 ID = -6.5A FOR TEST CIRCUIT SEE FIGURES 19, 20 -5 -10 IRF9230, IRF9232 VDS = -160V VDS = -100V VDS = -40V -15 0 -1.2 VSD, SOURCE TO DRAIN VOLTAGE (V) FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT VGS, GATE TO SOURCE VOLTAGE (V) gfs, TRANSCONDUCTANCE (S) 7.0 8 16 24 32 Qg(TOT), TOTAL GATE CHARGE (nC) 40 FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE 6-6 -1.8 IRF9230, IRF9231, IRF9232, IRF9233 Test Circuits and Waveforms VDS tAV L 0 VARY tP TO OBTAIN - RG REQUIRED PEAK IAS + VDD DUT 0V tP VGS VDD IAS IAS 0.01Ω VDS tP BVDSS FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS tON tOFF td(OFF) td(ON) tf tr RL 0 - DUT VDD RG VGS 10% 10% VDS VGS 0 90% 90% + 10% 50% 50% PULSE WIDTH 90% FIGURE 18. RESISTIVE SWITCHING WAVEFORMS FIGURE 17. SWITCHING TIME TEST CIRCUIT -VDS (ISOLATED SUPPLY) CURRENT REGULATOR 0 VDS DUT 12V BATTERY 0.2µF 50kΩ 0.3µF Qgs VGS Qgd D Qg(TOT) DUT G VDD 0 0 S IG(REF) IG CURRENT SAMPLING RESISTOR +VDS ID CURRENT SAMPLING RESISTOR IG(REF) FIGURE 20. GATE CHARGE WAVEFORMS FIGURE 19. GATE CHARGE TEST CIRCUIT 6-7