Power Transistor (−50V, −3A) 2SA1797 zDimensions (Unit : mm) zFeatures 1) Low saturation voltage. VCE (sat) = −0.35V (Max.) at IC / IB = −1A / 50mA. 2) Excellent DC current gain characteristics. 3) Complements the 2SC4672. MPT3 1.5 2.5 4.0 0.5 4.5 1.6 (1) (2) (3) 1.0 zPackaging specifications Type 2SA1797 Package hFE Marking ∗ Code Basic ordering unit (pieces) MPT3 PQ AG T100 1000 0.5 0.4 1.5 0.4 0.4 1.5 3.0 (1)Base (2)Collector (3)Emitter ∗Denotes hFE zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit VCBO VCEO −50 −50 V V VEBO ∗1 IC −6 −3 −6 V A (DC) A (Pulse) ∗2 0.5 2 W Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power 2SA1797 dissipation Junction temperature Storage temperature PC Tj 150 Tstg −55 to +150 °C °C + + ∗1 Single pulse, Pw=10ms ∗2 When mounted on a 40 40 0.7mm ceramic board. zElectrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Symbol Min. Typ. Max. Unit BVCBO BVCEO BVEBO ICBO −50 −50 −6 − − − − − − − − −0.1 V V V µA IC=−50µA IC=−1mA IE=−50µA VCB=−50V IEBO VCE(sat) ∗ hFE1 ∗ hFE2 ∗ − − 82 − −0.15 − −0.1 −0.35 270 µA V − VEB=−5V IC/IB=−1A/−50mA 45 − − − 200 36 − − − − MHz pF fT ∗ Cob Conditions VCE/IC=−2V/−0.5A VCE/IC=−2V/−1.5A VCE=−2V, IE=0.5A, f=100MHz VCB=−10V, IE=0A, f=1MHz ∗ Measured using pulse current www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/2 2009.04 - Rev.C 2SA1797 Data Sheet z Electrical characteristic curves 6mA 5mA 1 800m 4mA 600m 3mA 400m 2mA 1mA 200m 0 1 2 3 4 5 6 7 8 9 −0.5 −0.2 −0.1 −0.05 DC CURRENT GAIN : hFE 1.2 −0.02 −0.01 −5m 10 VCE=2V 2000 −2 −1 Ta=−4 0°C 1.4 5000 VCE=2V −5 Ta=1 00°C Ta=25 °C COLLECTOR CURRENT : IC (mA) mA lB=10 9mA 8mA 7mA 1.6 0 COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) −10 Ta=25°C −2m −1m 0 1000 500 Ta=100°C 200 Ta=25°C 100 Ta=−40°C 50 20 10 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 5 -1m -5m -0.02 -0.1 -0.5 -2 -5-10 -2m -0.01 -0.05 -0.2 -1 COLLECTOR TO EMITTER VOLTAGE : VCE (V) BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR CURRENT : IC (A) Fig.1 Grounded EmitterOutput Characteristics Fig.2 Grounded Emitter Propagation Characteristics Fig.3 DC Current Gain vs. Collector Current -1 10 lC/lB=20 -0.5 -0.2 Ta=100°C Ta=25°C Ta=−40°C -0.1 -0.05 -0.02 -0.01 -1m -5m -0.02 -0.1 -0.5 -2 -5-10 -2m -0.01 -0.05 -0.2 -1 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : lC (A) COLLECTOR CURRENT : lC (A) 2.0 1.8 10ms 100ms 1ms 1 DC 0.1 0.01 0.001 Ta=25°C Single non repetitive pulse Mounted on epoxy board t 12mm×15mm× 0.8mm 0.1 10 1 100 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.4 Collector-Emitter Saturation Voltage vs. Collector Current www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ Fig.5 Safe Operating Area 2/2 2009.04 - Rev.C Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. 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