NJG1108HA8 WiMAX 1.8GHZ Band Application(英語)

Application Note 5
NJG1108HA8
WiMAX Application
5. WiMAX 1.8GHZ BAND APPLICATION
5-1 SUMMARY
The characteristics of WiMAX 1.8GHz band application have evaluated as follows. The
evaluation circuit structure and measured data are reviewed.
5-2-1 MEASURED DATA1 (DC)
General conditions: VDD=VINV=2.7V, Ta=+25°C, Zs=Zl=50Ω
Parameter
Symbol
Conditions
Measurement
Unit
data
Operating Voltage
VDD
2.7
V
Inverter Voltage
VINV
2.7
V
Control Voltage (High)
VCTL(H)
1.85
V
Control Voltage (Low)
VCTL(L)
0
V
2.20
mA
0
uA
Operating current
IDD1
RF OFF, VCTL=1.85V
Operating current
IDD2
RF OFF, VCTL=0V
Inverter current
IINV1
RF OFF, VCTL=1.85V
30.2
uA
Inverter current
IINV2
RF OFF, VCTL=0V
8.0
uA
Control current
ICTL
RF OFF, VCTL=1.85V
5.9
uA
5-2-2 MEASURED DATA2 (RF)
General conditions: VDD=VINV=2.7V, VCTL=1.85V, fRF=1770~1805MHz,
Ta=+25°C, Zs=Zl=50Ω
Measurement
Parameter
Symbol
Conditions
data
Small signal gain
Noise figure
Pin at 1dB
compression point
Input 3rd order
intercept point
Gain
NF
Exclude PCB, Connector Losses
(0.05dB)
P-1dB(IN)
IIP3
f1=fRF, f2=fRF+100kHz,
Pin=-34dBm
Unit
17.8 ~ 17.9
dB
0.91 ~ 0.97
dB
-13.7 ~ -13.3
dBm
+1.6 ~ +1.8
dBm
RF Input port VSWR
VSWRi
2.09 ~ 2.11
RF Output port VSWR
VSWRo
1.78 ~ 1.90
1
Application Note 5
NJG1108HA8
5-3 APPLICATION CIRCUIT
(Top View)
GND
3
L2
6.8nH
RFIN
RFOUT
4
RF IN
L4
12nH
C1
100pF
2
L1
39nH
RF OUT
L3
12nH
VDD=2.7V
C2
1000pF
Bias
Circuit
GND
VINV
Logic
Circuit
5
1
VINV=2.7V
C3
1000pF
VCTL
6
VCTL=0V or 1.85V
C4
1000pF
5-4 PCB DESIGN
(Top View)
Parts List
Parts ID
L1 ~ L4
VDD
C1 ~ C4
Comment
MURATA
(LQP03T Series)
MURATA
(GRM03 Series)
C2
L2
RF IN
L1
C4
VCTL
L3
L4
C1
RF OUT
C3
VINV
PCB (FR-4):
t=0.2mm
MICROSTRIP LINE WIDTH
=0.4mm (Z0=50Ω)
PCB SIZE=17.0mm x 17.0mm
CAUTION
In order not to couple with terminal RFIN and RFOUT, please layout ground pattern under the IC.
2
Application Note 5
NJG1108HA8
5-5-1 Typical Characteristics
Condition: Ta=+25oC, VDD=VINV=2.7V, VCTL=1.85V, Zs=Zl=50Ω
S11, S22
S21, S12
VSWR
Zin, Zout
S11, S22 (f=50MHz~20GHz)
S21, S12 (f=50MHz~20GHz)
3
Application Note 5
NJG1108HA8
5-5-2 Typical Characteristics
10
Pout vs. Pin
Gain, IDD vs. Pin
(VDD=VINV=2.7V, V CTL=1.85V, fRF=1787.5MHz)
(VDD=VINV=2.7V, V CTL=1.85V, fRF=1787.5MHz)
22
Gain (dB)
Pout
-5
-10
-15
P-1dB(IN)=-13.3dBm
-20
-25
-40
-30
-20
-10
0
18
6
16
5
IDD
14
12
3
10
2
8
0
-30
-20
Pin (dBm)
10
Pout, IM3 vs. Pin
(VDD=VINV=2.7V, V CTL=1.85V)
(VDD=VINV=2.7V, VCTL=1.85V, fRF=1787.5+1787.6MHz)
20
20
19
17
2
16
15
NF
Pout, IM3 (dBm)
2.5
1.5
0
18
Gain (dB)
Gain
3
Pout
-20
-40
-60
14
13
(NF:Exclude PCB, Connector Losses)
0
1.65
0
Pin (dBm)
3.5
0.5
-10
NF, Gain vs. frequency
4
1
1
P-1dB(IN)=-13.3dBm
6
-40
10
4
1.7
1.75
1.8
IDD (mA)
Gain
0
Pout (dBm)
7
20
5
Noise Figure (dB)
8
1.85
12
1.9
frequency (GHz)
IM3
IIP3=+1.7dBm
-80
-100
-40
-30
-20
-10
0
10
Pin (dBm)
k factor vs. frequency
(VDD=VINV=2.7V, VCTL=1.85V)
20
k factor
15
10
5
0
0
5
10
15
20
frequency (GHz)
4