Datasheet

UNISONIC TECHNOLOGIES CO., LTD
UT134E
TRIAC
TRIAC

DESCRIPTION
Glass passivated, sensitive gate triac in a plastic envelope,
intended for use in general purpose bidirectional switching and
phase control aplications, where high sensitivity is required in all
four quadrants.

SYMBOL

ORDERING INFORMATION
Order Number
Normal
UT134E-x-T60-K

Lead Free Plating
UT134E-x-T60-K
Package
TO-126
Pin Assignment
1
2
3
MT1
MT2 GATE
Packing
Bulk
MARKING
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UT134E

TRIAC
ABSOLUTE MAXIMUM RATING
PARAMETER
SYMBOL
UT134E-5
UT134E-6
UT134E-8
Repetitive peak off-state voltages
RMS on-state current
full sine wave; Tmb ≤107°C
Non-repetitive peak on-state current
(Full sine wave; TJ = 25°C prior to surge)
I2t for fusing
VDRM
RATINGS
500
600
800
UNIT
V
4
A
IT(RMS)
t = 20ms
t = 16.7 ms
25
A
27
2
t = 10 ms
It
3.1
A2 s
50
A/μS
T2+ G+
Repetitive rate of rise of on-state current
T2+ G50
A/μS
after triggering
dIT /dt
T2- G50
A/μS
ITM = 6 A; IG = 0.2A;dIG /dt = 0.2A/μs
T2- G+
10
A/μS
Peak gate voltage
VGM
5
V
Peak gate current
IGM
2
A
Peak gate power
PGM
5
W
Average gate power (over any 20 ms period)
PG(AV)
0.5
W
Junction Temperature
TJ
125
°C
Operating Temperature
TOPR
-20 ~ +85
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. The device is guaranteed to meet performance specification within 0°C~70°C operating temperature range
and assured by design from –20°C ~ 85°C.
3. Although not recommended, off-state voltages up to 800V may be applied without damage, but the traic
may switch to the on-state. The rate of rise of current should not exceed 3A/s.

THERMAL RESISTANCES
PARAMETER
Thermal resistance Junction to Ambient (In free air)
Full cycle
Thermal resistance Junction to mounting
base
Half cycle

ITSM
SYMBOL
θJA
MIN
TYP
100
MAX
3.0
3.7
θJC
UNIT
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise stated)
PARAMETER
Gate trigger current
SYMBOL
IGT
Latching current
IL
Holding current
On-state voltage
IH
VT
Gate trigger voltage
VGT
Off-state leakage current
ID
TEST CONDITIONS
T2+G+
T2+GVD = 12 V; IT = 0.1 A
T2-GT2-G+
T2+G+
T2+GVD = 12 V; IGT = 0.1 A
T2-GT2-G+
VD = 12 V; IGT = 0.1 A
IT = 5 A
VD = 12 V; IT = 0.1 A
VD = 400V ; IT = 0.1 A; TJ =125°C
VD = VDRM(max) ; TJ= 125°C
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MIN
0.25
TYP
2.5
4.0
5.0
11
3.0
10
2.5
4.0
2.2
1.4
0.7
0.4
0.1
MAX UNIT
10
mA
10
mA
10
mA
25
mA
15
mA
20
mA
15
mA
20
mA
15
mA
1.7
V
1.5
V
V
0.5
mA
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TRIAC
DYNAMIC CHARACTERISTICS (TJ=25°C, unless otherwise stated)
PARAMETER
SYMBOL
Critical rate of rise of Off-state voltage
dVD /dt
Gate controlled turn-on time
tGT
CONDITIONS
VDM = 67% VDRM(max) ; TJ=125°C;
exponential waveform; gate open
circuit
ITM = 6A; VD=VDRM(max) ; IG=0.1A;
dIG/dt=5A/μs
UNISONIC TECHNOLOGIES CO., LTD
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MIN
TYP
MAX UNIT
50
V/μs
2
μs
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TRIAC
TYPICAL CHARACTERISTICS
Fig 3. Maximum Permissible Non-repetitive Peak
On-state Current, ITSM, Versus Number Of Cycles,
For Sinusoidal Currents, f=50Hz.
ITSM/A
30
ITSM
IT
25
time
T
TJ initial=25°C max
20
15
Fig 4. Maximum Permissible Rms Current, lT(RMS)
Versus Mounting Base Temperature, Tmb
IT(RMS)/A
5
107°C
4
3
2
10
1
5
0
0
10
100
Number of cycles at 50Hz
1000
IT(RMS)/A
1.4
8
1.2
6
1
4
0.8
2
0.6
0.1
1
surge duration /S
10
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50
100
150
Fig 6. Normalised Gate Trigger Voltage,
VGT(TJ)/VGT(25°C), Versus Junction
Temperature, TJ
VGT(TJ)
VGT(25°C)
1.6
10
0
0.01
0
Tmb/C
Fig 5. Maximum Permissible Repetitive Rms On-State
Current , lT(RMS) ,Versus Surge Duration, For
Sinusoidal Currents, f=50HZ, Tmb 107°C
12
0
-50
0.4
-50
0
50
100
150
TJ /°C
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TRIAC
TYPICAL CHARACTERISTICS(Cont.)
Fig 9. Normalised Holding Current, IH(TJ)/IH(25°C),
versus junction temperature, TJ
IH(TJ)
IH(25°C)
3
Fig 10. Typical And Maximum On-state
Characteristic
12
2
max
typ
8 VoUT=1.27V
RS=0.091Ohms
6
1.5
1
4
0.5
2
0
-50
0
50
TJ /°C
100
150
Fig 11. Transient Thermal Impedance
Zthj-mb,Versus Pulse Width tp
Zth j-mb(K/W)
unidirectional
0
0
0.5
1
1.5
VT/V
2
2.5
3
Fig 12. Typical Critical Rate Of Rise Of Off-satate
Voltage, dVD/dt Versus Junction
Temperature, TJ
dVD/dt(V/us)
1000
bidirectional
1
0.1
TJ=125°C
10 TJ=25°C
2.5
10
IT/A
PD
tp
10
t
0.01
10us 0.1ms 1ms 10ms 0.1s
1s
10s
tp/s
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1
0
50
100
150
TJ /°C
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TRIAC
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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