INTERSIL HGTP20N60A4

HGTG20N60A4, HGTP20N60A4
Data Sheet
October 1999
File Number
600V, SMPS Series N-Channel IGBTs
Features
The HGTG20N60A4 and HGTP20N60A4 are MOS gated
high voltage switching devices combining the best features
of MOSFETs and bipolar transistors. These devices have
the high input impedance of a MOSFET and the low on-state
conduction loss of a bipolar transistor. The much lower
on-state voltage drop varies only moderately between 25oC
and 150oC.
• >100kHz Operation at 390V, 20A
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power
supplies.
• Temperature Compensating SABER™ Model
www.intersil.com
Formerly Developmental Type TA49339.
Packaging
• 200kHz Operation at 390V, 12A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 55ns at TJ = 125oC
• Low Conduction Loss
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards
JEDEC TO-220AB ALTERNATE VERSION
Ordering Information
E
PART NUMBER
4781.1
PACKAGE
BRAND
HGTP20N60A4
TO-220AB
20N60A4
HGTG20N60A4
TO-247
20N60A4
C
G
COLLECTOR
(FLANGE)
NOTE: When ordering, use the entire part number.
Symbol
C
JEDEC STYLE TO-247
E
C
G
G
E
COLLECTOR
(FLANGE)
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
SABER™ is a trademark of Analogy, Inc.
1-888-INTERSIL or 407-727-9207 | Copyright © Intersil Corporation 1999
HGTG20N60A4, HGTP20N60A4
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified
HGTG20N60A4, HGTP20N60A4
UNITS
600
V
70
40
280
±20
±30
100A at 600V
290
2.32
-55 to 150
A
A
A
V
V
W
W/oC
oC
300
260
oC
oC
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TPKG
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
TJ = 25oC, Unless Otherwise Specified
Electrical Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
-
-
V
Collector to Emitter Breakdown Voltage
BVCES
IC = 250µA, VGE = 0V
600
Emitter to Collector Breakdown Voltage
BVECS
IC = 10mA, VGE = 0V
Collector to Emitter Leakage Current
ICES
VCE = 600V
15
-
-
V
TJ = 25oC
-
-
250
µA
TJ = 125oC
-
-
2.0
mA
TJ = 25oC
TJ = 125oC
-
1.8
2.7
V
Collector to Emitter Saturation Voltage
VCE(SAT)
IC = 20A,
VGE = 15V
Gate to Emitter Threshold Voltage
VGE(TH)
IC = 250µA, VCE = 600V
-
1.6
2.0
V
4.5
5.5
7.0
V
-
-
±250
nA
100
-
-
A
IGES
VGE = ±20V
Switching SOA
SSOA
TJ = 150oC, RG = 3Ω, VGE = 15V
L = 100µH, VCE = 600V
Gate to Emitter Plateau Voltage
VGEP
IC = 20A, VCE = 300V
-
8.6
-
V
VGE = 15V
-
142
162
nC
VGE = 20V
-
182
210
nC
-
15
-
ns
-
12
-
ns
-
73
-
ns
Gate to Emitter Leakage Current
On-State Gate Charge
Qg(ON)
IC = 20A,
VCE = 300V
Current Turn-On Delay Time
td(ON)I
IGBT and Diode at TJ = 25oC
ICE = 20A
VCE = 390V
VGE =15V
RG = 3Ω
L = 500µH
Test Circuit (Figure 20)
Current Rise Time
trI
Current Turn-Off Delay Time
td(OFF)I
Current Fall Time
tfI
-
32
-
ns
-
105
-
µJ
EON2
-
280
350
µJ
EOFF
-
150
200
µJ
Turn-On Energy (Note 3)
EON1
Turn-On Energy (Note 3)
Turn-Off Energy (Note 2)
2
HGTG20N60A4, HGTP20N60A4
TJ = 25oC, Unless Otherwise Specified (Continued)
Electrical Specifications
PARAMETER
SYMBOL
Current Turn-On Delay Time
TEST CONDITIONS
td(ON)I
Current Rise Time
trI
Current Turn-Off Delay Time
td(OFF)I
Current Fall Time
MIN
TYP
MAX
UNITS
-
15
21
ns
IGBT and Diode at TJ = 125oC
ICE = 20A
VCE = 390V
VGE = 15V
RG = 3Ω
tfI
L = 500µH
Test Circuit (Figure 20)
-
13
18
ns
-
105
135
ns
-
55
73
ns
-
115
-
µJ
µJ
Turn-On Energy (Note 3)
EON1
Turn-On Energy (Note 3)
EON2
-
510
600
Turn-Off Energy (Note 2)
EOFF
-
330
500
µJ
0.43
oC/W
Thermal Resistance Junction To Case
RθJC
-
-
NOTES:
2. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in
Figure 20.
Unless Otherwise Specified
VGE = 15V
DIE CAPABILITY
80
PACKAGE LIMIT
60
40
20
0
25
50
75
100
125
150
120
TJ = 150oC, RG = 3Ω, VGE = 15V, L = 100µH
100
80
60
40
20
0
0
100
200
300
400
500
600
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
TC , CASE TEMPERATURE (oC)
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
fMAX, OPERATING FREQUENCY (kHz)
500
TC
VGE
75oC
15V
300
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
100 fMAX2 = (PD - PC) / (EON2 + EOFF)
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RØJC = 0.43oC/W, SEE NOTES
TJ = 125oC, RG = 3Ω, L = 500µH, V CE = 390V
40
5
10
20
30
40
50
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
3
tSC , SHORT CIRCUIT WITHSTAND TIME (µs)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
700
14
450
VCE = 390V, RG = 3Ω, TJ = 125oC
12
400
ISC
10
350
8
300
6
250
4
200
tSC
2
0
150
10
11
12
13
14
15
100
VGE , GATE TO EMITTER VOLTAGE (V)
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
ISC, PEAK SHORT CIRCUIT CURRENT (A)
ICE , DC COLLECTOR CURRENT (A)
100
ICE, COLLECTOR TO EMITTER CURRENT (A)
Typical Performance Curves
HGTG20N60A4, HGTP20N60A4
100
Unless Otherwise Specified (Continued)
DUTY CYCLE < 0.5%, VGE = 12V
PULSE DURATION = 250µs
80
60
40
TJ = 125oC
20
0
TJ = 25oC
TJ = 150oC
0
0.4
1.6
2.0
2.4
2.8
0.8
1.2
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
3.2
TJ = 125oC, VGE = 12V, VGE = 15V
800
600
400
0
TJ = 25oC, VGE = 12V, VGE = 15V
60
40
TJ = 125oC
20
0
TJ = 150oC
0
0.4
10
15
20
25
30
35
ICE , COLLECTOR TO EMITTER CURRENT (A)
1.2
1.6
2.0
2.4
2.8
RG = 3Ω, L = 500µH, VCE = 390V
700
600
500
TJ = 125oC, VGE = 12V OR 15V
400
300
200
TJ = 25oC, VGE = 12V OR 15V
100
5
40
10
15
20
25
30
35
40
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
36
22
RG = 3Ω, L = 500µH, VCE = 390V
RG = 3Ω, L = 500µH, VCE = 390V
20
32
trI , RISE TIME (ns)
TJ = 25oC, TJ = 125oC, VGE = 12V
18
16
14
12
TJ = 25oC, TJ = 125oC, VGE = 12V
28
24
20
16
12
TJ = 25oC, TJ = 125oC, VGE = 15V
10
8
0.8
TJ = 25oC
0
5
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
td(ON)I, TURN-ON DELAY TIME (ns)
80
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
EOFF, TURN-OFF ENERGY LOSS (µJ)
EON2 , TURN-ON ENERGY LOSS (µJ)
1200
200
DUTY CYCLE < 0.5%, VGE = 15V
PULSE DURATION = 250µs
800
RG = 3Ω, L = 500µH, VCE = 390V
1000
100
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
1400
ICE, COLLECTOR TO EMITTER CURRENT (A)
ICE, COLLECTOR TO EMITTER CURRENT (A)
Typical Performance Curves
TJ = 25oC OR TJ = 125oC, VGE = 15V
8
4
5
10
15
20
25
30
35
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
4
40
5
10
15
20
25
30
35
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
40
HGTG20N60A4, HGTP20N60A4
Typical Performance Curves
Unless Otherwise Specified (Continued)
80
RG = 3Ω, L = 500µH, VCE = 390V
RG = 3Ω, L = 500µH, VCE = 390V
72
110
VGE = 12V, VGE = 15V, TJ = 125oC
tfI , FALL TIME (ns)
td(OFF)I , TURN-OFF DELAY TIME (ns)
120
100
90
80
VGE = 12V, VGE = 15V, TJ = 25oC
64
TJ = 125oC, VGE = 12V OR 15V
56
48
TJ = 25oC, VGE = 12V OR 15V
40
32
70
24
60
5
10
15
20
25
30
35
16
40
5
10
ICE , COLLECTOR TO EMITTER CURRENT (A)
16
240
DUTY CYCLE < 0.5%, VCE = 10V
PULSE DURATION = 250µs
160
120
TJ = 25oC
80
TJ = 125oC
TJ = -55oC
40
0
6
7
8
9
11
10
12
VCE = 600V
10
0.8
ICE = 20A
ICE = 10A
0.2
0
50
75
100
125
TC , CASE TEMPERATURE (oC)
FIGURE 15. TOTAL SWITCHING LOSS vs CASE
TEMPERATURE
5
150
ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ)
ETOTAL, TOTAL SWITCHING ENERGY LOSS (mJ)
ICE = 30A
1.0
25
VCE = 400V
VCE = 200V
6
4
2
20
0
40
60
80
100
120
140
160
FIGURE 14. GATE CHARGE WAVEFORMS
ETOTAL = EON2 + EOFF
0.4
40
QG , GATE CHARGE (nC)
1.4
0.6
35
8
0
12
RG = 3Ω, L = 500µH, VCE = 390V, VGE = 15V
1.2
30
IG(REF) = 1mA, RL = 15Ω, TJ = 25oC
FIGURE 13. TRANSFER CHARACTERISTIC
1.6
25
14
VGE, GATE TO EMITTER VOLTAGE (V)
1.8
20
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
VGE, GATE TO EMITTER VOLTAGE (V)
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
200
15
ICE , COLLECTOR TO EMITTER CURRENT (A)
TJ = 125oC, L = 500µH, VCE = 390V, VGE = 15V
ETOTAL = EON2 + EOFF
10
ICE = 30A
1
ICE = 20A
ICE = 10A
0.1
3
10
100
1000
RG, GATE RESISTANCE (Ω)
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
HGTG20N60A4, HGTP20N60A4
Unless Otherwise Specified (Continued)
5
C, CAPACITANCE (nF)
FREQUENCY = 1MHz
4
3
CIES
2
1
COES
CRES
0
0
20
40
60
80
100
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Typical Performance Curves
2.2
DUTY CYCLE < 0.5%, TJ = 25oC
PULSE DURATION = 250µs,
2.1
2.0
ICE = 30A
ICE = 20A
1.9
1.8
ICE = 10A
1.7
8
9
FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
ZθJC , NORMALIZED THERMAL RESPONSE
10
11
12
13
14
15
FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE
vs GATE TO EMITTER VOLTAGE
100
0.5
0.2
10-1
0.1
t1
0.05
PD
0.02
0.01
10-2
t2
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
SINGLE PULSE
10-5
10-4
10-3
10-2
10-1
100
t1 , RECTANGULAR PULSE DURATION (s)
FIGURE 19. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveforms
HGTG20N60A4D
DIODE TA49372
90%
10%
VGE
EON2
L = 500µH
EOFF
VCE
RG = 3Ω
90%
DUT
+
-
VDD = 390V
ICE
10%
td(OFF)I
tfI
trI
td(ON)I
FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT
6
16
VGE, GATE TO EMITTER VOLTAGE (V)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 21. SWITCHING TEST WAVEFORMS
HGTG20N60A4, HGTP20N60A4
Handling Precautions for IGBTs
Operating Frequency Information
Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge
built in the handler’s body capacitance is not discharged
through the device. With proper handling and application
procedures, however, IGBTs are currently being extensively
used in production by numerous equipment manufacturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions are
taken:
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (ICE) plots are possible using
the information shown for a typical unit in Figures 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows fMAX1 or fMAX2 ; whichever is smaller at each
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD™ LD26” or equivalent.
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.
5. Gate Voltage Rating - Never exceed the gate-voltage
rating of VGEM. Exceeding the rated VGE can result in
permanent damage to the oxide layer in the gate region.
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate
open-circuited or floating should be avoided. These
conditions can result in turn-on of the device due to
voltage buildup on the input capacitor due to leakage
currents or pickup.
fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I).
Deadtime (the denominator) has been arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
are possible. td(OFF)I and td(ON)I are defined in Figure 21.
Device turn-off delay can establish an additional frequency
limiting condition for an application other than TJM .
fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The
allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC .
The sum of device switching and conduction losses must not
exceed PD. A 50% duty factor was used (Figure 3) and the
conduction losses (PC) are approximated by
PC = (VCE x ICE)/2.
EON2 and EOFF are defined in the switching waveforms
shown in Figure 21. EON2 is the integral of the
instantaneous power loss (ICE x VCE) during turn-on and
EOFF is the integral of the instantaneous power loss
(ICE x VCE) during turn-off. All tail losses are included in the
calculation for EOFF; i.e., the collector current equals zero
(ICE = 0).
7. Gate Protection - These devices do not have an internal
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.
7
ECCOSORBD™ is a trademark of Emerson and Cumming, Inc.
HGTG20N60A4, HGTP20N60A4
TO-220AB (Alternate Version)
3 LEAD JEDEC TO-220AB PLASTIC PACKAGE
A
E
ØP
INCHES
A1
Q
H1
TERM. 4
D
L1
b1
c
MIN
MAX
MIN
MAX
A
0.170
0.180
4.32
4.57
-
0.048
0.052
1.22
1.32
2, 4
b
0.030
0.034
0.77
0.86
2, 4
b1
0.045
0.055
1.15
1.39
2, 4
c
0.018
0.022
0.46
0.55
2, 4
D
0.590
0.610
14.99
15.49
-
E
0.395
0.405
10.04
10.28
e1
60o
H1
1
2
3
J1
e
e1
NOTES
A1
e
b
L
MILLIMETERS
SYMBOL
0.100 TYP
0.200 BSC
0.235
0.255
-
2.54 TYP
5
5.08 BSC
5
5.97
6.47
-
J1
0.095
0.105
2.42
2.66
6
L
0.530
0.550
13.47
13.97
-
L1
0.110
0.130
2.80
3.30
3
ØP
0.149
0.153
3.79
3.88
-
Q
0.105
0.115
2.66
2.92
-
NOTES:
1. These dimensions are within allowable dimensions of Rev. J of
JEDEC TO-220AB outline dated 3-24-87.
2. Dimension (without solder).
3. Solder finish uncontrolled in this area.
4. Add typically 0.002 inches (0.05mm) for solder plating.
5. Position of lead to be measured 0.250 inches (6.35mm) from bottom of dimension D.
6. Position of lead to be measured 0.100 inches (2.54mm) from bottom of dimension D.
7. Controlling dimension: Inch.
8. Revision 3 dated 7-97.
8
HGTG20N60A4, HGTP20N60A4
TO-247
3 LEAD JEDEC STYLE TO-247 PLASTIC PACKAGE
A
E
SYMBOL
ØP
Q
ØR
D
L1
b1
c
2
1
3
3
J1
e
MAX
MILLIMETERS
MIN
MAX
NOTES
0.180
0.190
4.58
4.82
-
b
0.046
0.051
1.17
1.29
2, 3
b1
0.060
0.070
1.53
1.77
1, 2
b2
0.095
0.105
2.42
2.66
1, 2
c
0.020
0.026
0.51
0.66
1, 2, 3
D
0.800
0.820
20.32
20.82
-
E
0.605
0.625
15.37
15.87
e1
b
MIN
A
e
b2
L
INCHES
TERM. 4
ØS
0.219 TYP
0.438 BSC
5.56 TYP
11.12 BSC
4
4
J1
0.090
0.105
2.29
2.66
1
L
0.620
0.640
15.75
16.25
-
BACK VIEW
L1
0.145
0.155
3.69
3.93
1
2
e1
5
ØP
0.138
0.144
3.51
3.65
-
Q
0.210
0.220
5.34
5.58
-
ØR
0.195
0.205
4.96
5.20
-
ØS
0.260
0.270
6.61
6.85
-
NOTES:
1. Lead dimension and finish uncontrolled in L1.
2. Lead dimension (without solder).
3. Add typically 0.002 inches (0.05mm) for solder coating.
4. Position of lead to be measured 0.250 inches (6.35mm) from bottom
of dimension D.
5. Position of lead to be measured 0.100 inches (2.54mm) from bottom
of dimension D.
6. Controlling dimension: Inch.
7. Revision 1 dated 1-93.
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
Sales Office Headquarters
NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (407) 724-7000
FAX: (407) 724-7240
EUROPE
Intersil SA
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
9
ASIA
Intersil (Taiwan) Ltd.
7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029