UNISONIC TECHNOLOGIES CO., LTD 2SB1188 PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB1188 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. 1 FEATURES SOT-89 *High current output up to 3A *Low saturation voltage ORDERING INFORMATION Ordering Number Note: 2SB1188G-x-AB3-R Pin Assignment: B: Base C: Collector Package SOT-89 Pin Assignment 1 2 3 B C E Packing Tape Reel E: Emitter MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 3 QW-R208-041.D 2SB1188 PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector -Base Voltage VCBO -40 V Collector -Emitter Voltage VCEO -30 V Emitter -Base Voltage VEBO -5 V Peak Collector Current ICM -7 A DC Collector Current IC -3 A Base Current IB -0.6 A Power Dissipation PD 0.5 W Junction Temperature TJ +150 °C Storage Temperature TSTG -40~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL RESISTANCES CHARACTERISTICS PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJC UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER Collector Base Breakdown Voltage Collector Emitter Breakdown Voltage Emitter Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current SYMBOL BVCBO BVCEO BVEBO ICBO IEBO hFE1 DC Current Gain(Note) hFE2 Collector-Emitter Saturation Voltage VCE(SAT) Base-Emitter Saturation Voltage VBE(SAT) Current Gain Bandwidth Product fT Output Capacitance Cob Note: Pulse test: PW<300μs, Duty Cycle<2% RATINGS 250 35.7 TEST CONDITIONS IC= -50μA IC= -1mA IE=-50μA VCB=-30V,IE=0 VEB=-4V,IC=0 VCE=-2V,Ic=-20mA VCE=-2V,Ic=-1A Ic=-2A,IB=-0.2A Ic=-2A,IB=-0.2A VCE=-5V,Ic=-0.1A VCB=-10V,IE=0,f=1MHz MIN -40 -30 -5 TYP MAX UNIT V V V μA μA -1 -1 30 100 200 150 -0.3 -1.0 80 45 400 -0.5 -2.0 V V MHz pF CLASSIFICATION OF hFE2 RANK RANGE Q 100 ~ 200 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw P 160 ~ 320 E 200 ~ 400 2 of 3 QW-R208-041.D 2SB1188 ■ PNP SILICON TRANSISTOR TYPICAL CHARACTERICS UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R208-041.D