ROHM 2SC5824_11

Power transistor (60V, 3A)
2SC5824
Dimensions (Unit : mm)
Features
1) High speed switching. (Tf : Typ. : 30ns at IC = 3A)
2) Low saturation voltage, typically
(Typ. : 200mV at IC = 2A, IB = 200mA)
3) Strong discharge power for inductive load and
capacitance load.
4) Complements the 2SA2071.
MPT3
Applications
Low frequency amplifier
High speed switching
(1)Base(Gate)
(2)Collector(Drain)
(3)Emitter(Sourse)
Each lead has same dimensions
Abbreviated symbol : UP
Structure
NPN Silicon epitaxial planar transistor
Packaging specifications
Package
Type
Taping
Code
T100
Basic ordering unit
(pieces)
1000
2SC5824
Absolute maximum ratings (Ta=25C)
Symbol
Limits
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
60
V
Emitter-base voltage
VEBO
6
V
IC
3
A
ICP
6
A
PC
500
mW
PC
2.0
W
Tj
150
°C
Tstg
−55 to +150
°C
Parameter
Collector current
Power dissipation
Junction temperature
Range of storage temperature
∗1
∗2
∗3
∗1 Pw=100ms
∗2 Each terminal mounted on a recommended land.
∗3 Mounted on a 40x40x0.7(mm) ceramic substrate
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2011.03 - Rev.C
2SC5824
Data Sheet
Electrical characteristics (Ta=25C)
Parameter
Symbol
Min.
Typ.
Max.
BVCBO
60
−
−
V
IC=100μA
Collector−emitter breakdown voltage BVCEO
60
−
−
V
IC=1mA
−
V
IE=100μA
1.0
μA
VCB=40V
Collector−base breakdown voltage
Conditions
Unit
BVEBO
6
−
Collector cut-off current
ICBO
−
−
Emitter cut-off current
IEBO
−
−
1.0
μA
VEB=4V
VCE(sat)
−
200
500
mV
IC=2A, IB=200mA
hFE
120
−
390
−
fT
−
200
−
MHz
Collector output capacitance
Cob
−
20
−
pF
VCB=10V, IE=0mA, f=1MHz
Turn-on time
ton
−
50
−
ns
Storage time
tstg
−
150
−
ns
Fall time
tf
−
30
−
ns
IC=3A,
IB1=300mA
IB2= −300mA
VCC 25V ∗2
Emitter−base breakdown voltage
Collector−emitter staturation voltage
DC current gain
Transition frequency
∗1
VCE=2V, IC=100mA
VCE=10V, IE= −100mA, f=10MHz ∗1
∗1 Non repetitive pulse
∗2 See switching charactaristics measurement circuits
hFE RANK
Q
R
120-270
180-390
Electrical characteristic curves
1000
10
1000
1
Ta=100°C
Ta= −40°C
Ta=25°C
0.01
0.5
1
2
1.5
VCE=3V
VCE=2V
10
1
0.001
BASE TO EMITTER VOLTAGE : VBE (V)
0.01
0.1
1
COLLECTOR SATURATION
VOLTAGE : VCE(sat)(V)
COLLECTOR SATURATION
VOLTAGE : VCE (sat)(V)
IC/IB=20/1
IC/IB=10/1
1
0.1
1
IC/IB=10/1
Ta=125°C
1
Ta=100°C
0.1
Ta=25°C
Ta= −40°C
Ta=25°C
1
Ta=125°C
Ta=100°C
Ta= −40°C
10
COLLECTOR CURRENT : IC (A)
Fig.4 Collector-emitter saturation voltage
vs. collector current
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0.01
0.001
10
10
IC/IB=10/1
1
0.1
0.01
Fig.3 DC current gain vs. collector
current
10
Ta=25°C
0.01
Ta=125°C
COLLECTOR CURRENT : IC (A)
Fig.2 DC current gain vs. collector
current
10
0.01
0.001
Ta=100°C
1
0.001
10
Ta=25°C
10
COLLECTOR CURRENT : IC (A)
Fig.1 Ground emitter propagation
characteristics
0.1
Ta= −40°C
100
BASE EMITTER SATURATION
VOLTAGE : VBE(sat) (V)
0
100
DC CURRENT GAIN : hFE
VCE=5V
Ta=125°C
0.1
VCE=2V
Ta=25°C
DC CURRENT GAIN : hFE
COLLECTOR CURRENT : IC (A)
VCE=2V
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.5 Collector-emitter saturation voltage
vs. Collector Current
2/3
0.1
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.6 Base-emitter saturation voltage
vs. collector current
2011.03 - Rev.C
Data Sheet
TRANSITION FREQUENCY : FT (MHz)
1000
Ta=25°C
VCE=10V
100
10
1
−0.001
−0.01
−0.1
−1
−10
1000
100
Ta=25°C
VCC=25V
IC/IB=10/1
Ta=25°C
f=1MHz
tstg
SWITCHING TIME (ns)
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
2SC5824
10
1
0.1
1
10
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.7 Transition frequency
Fig.8 Collector output capacitance
ton
tf
10
0.01
100
EMITTER CURRENT : IE (A)
100
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.9 Switching Time
Switching characteristics measurement circuits
RL=8.3Ω
VIN
IB1
IC
VCC 25V
PW
IB2
PW 50 S
Duty cycle
1%
IB1
IB2
Base current
waveform
90%
IC
Collector current
waveform
10%
ton
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tstg tf
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2011.03 - Rev.C
Notice
Notes
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R1120A