RHRD660, RHRD660S Data Sheet January 2000 File Number 3746.3 6A, 600V Hyperfast Diodes Features The RHRD660 and RHRD660S are hyperfast diodes with soft recovery characteristics (trr < 30ns). They have half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction. • Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . . . <30ns • Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175oC • Reverse Voltage Up To . . . . . . . . . . . . . . . . . . . . . . . .600V • Avalanche Energy Rated These devices are intended for use as freewheeling/ clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. Applications Formerly developmental type TA49057. • General Purpose • Planar Construction • Switching Power Supplies • Power Switching Circuits Packaging Ordering Information JEDEC STYLE TO-251 PART NUMBER PACKAGE BRAND RHRD660 TO-251 RHR660 RHRD660S TO-252 RHR660 ANODE CATHODE NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-252 variant in tape and reel, e.g. RHRD660S9A. CATHODE (FLANGE) Symbol JEDEC STYLE TO-252 K CATHODE (FLANGE) CATHODE A ANODE Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV) (TC = 152oC) Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFRM (Square Wave, 20kHz) Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM (Halfwave, 1 Phase, 60Hz) Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAVL Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ Maximum Lead Temperature for Soldering (Leads at 0.063 in. (1.6mm) from case for 10s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TPKG 1 RHRD660, RHRD660S 600 600 600 6 UNITS V V V A 12 A 60 A 50 10 -65 to 175 W mJ oC 300 260 oC 1-888-INTERSIL or 321-724-7143 | Copyright oC © Intersil Corporation 2000 RHRD660, RHRD660S TC = 25oC, Unless Otherwise Specified Electrical Specifications SYMBOL TEST CONDITION MIN TYP MAX UNITS IF = 6A - - 2.1 V IF = 6A, TC = 150oC - - 1.7 V VR = 600V - - 100 µA VR = 600V, TC = 150oC - - 500 µA IF = 1A, dIF/dt = 200A/µs - - 30 ns IF = 6A, dIF/dt = 200A/µs - - 35 ns ta IF = 6A, dIF/dt = 200A/µs - 16 - ns tb IF = 6A, dIF/dt = 200A/µs - 8.5 - ns QRR IF = 6A, dIF/dt = 200A/µs - 45 - nC VR = 10V, IF = 0A - 20 - pF - - 3 oC/W VF IR trr CJ RθJC DEFINITIONS VF = Instantaneous forward voltage (pw = 300µs, D = 2%). IR = Instantaneous reverse current. trr = Reverse recovery time (See Figure 9), summation of ta + tb. ta = Time to reach peak reverse current (See Figure 9). tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9). QRR = Reverse recovery charge. CJ = Junction capacitance. RθJC = Thermal resistance junction to case. pw = Pulse width. D = Duty cycle. Typical Performance Curves 30 1000 IR , REVERSE CURRENT (µA) IF, FORWARD CURRENT (A) 175oC 10 175oC 25oC 100oC 1 0.5 0 0.5 1 1.5 2 2.5 VF, FORWARD VOLTAGE (V) FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE 2 3 100 100oC 10 1 0.1 25oC 0.01 0 100 200 300 400 500 VR , REVERSE VOLTAGE (V) FIGURE 2. REVERSE CURRENT vs REVERSE 600 RHRD660, RHRD660S Typical Performance Curves (Continued) 30 50 TC = 25oC, dIF/dt = 200A/µs TC = 100oC, dIF/dt = 200A/µs t, RECOVERY TIMES (ns) t, RECOVERY TIMES (ns) 25 trr 20 15 ta 10 tb 5 0 0.5 1 40 trr 30 ta 20 tb 10 0 0.5 6 1 IF, FORWARD CURRENT (A) IF, FORWARD CURRENT (A) FIGURE 3. trr, ta AND tb CURVES vs FORWARD CURRENT FIGURE 4. trr, ta AND tb CURVES vs FORWARD CURRENT IF(AV) , AVERAGE FORWARD CURRENT (A) 75 t, RECOVERY TIMES (ns) TC = 175oC, dIF/dt = 200A/µs 60 trr 45 30 ta tb 15 0 0.5 1 6 6 5 DC 4 SQ. WAVE 3 2 1 0 140 145 150 FIGURE 5. trr, ta AND tb CURVES vs FORWARD CURRENT CJ , JUNCTION CAPACITANCE (pF) 160 165 170 FIGURE 6. CURRENT DERATING CURVE 50 40 30 20 10 0 50 100 150 200 VR , REVERSE VOLTAGE (V) FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE 3 155 TC , CASE TEMPERATURE (oC) IF, FORWARD CURRENT (A) 0 6 175 RHRD660, RHRD660S Test Circuits and Waveforms VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF L DUT CURRENT SENSE RG IF + VGE - IGBT t1 VDD dIF trr dt ta tb 0 0.25 IRM t2 IRM FIGURE 8. trr TEST CIRCUIT FIGURE 9. trr WAVEFORMS AND DEFINITIONS IMAX = 1A L = 20mH R < 0.1Ω EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) VAVL L CURRENT SENSE R + VDD IL IL I V Q1 VDD DUT t0 FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT t1 t2 t FIGURE 11. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site www.intersil.com 4