2570

NTE2570 (NPN) & NTE2571 (PNP)
Silicon Complementary Transistors
High Current Switch
TO−220 Full Pack
Features:
D Low Collector−Emitter Saturation Voltage
D High Current Capacity
Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Collector Power Dissipation, PC
TA = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cut−Off Current
ICBO
VCB = 80V, IE = 0
−
−
0.1
mA
Emitter Cut−Off Current
IEBO
VEB = 4V, IC = 0
−
−
3.0
mA
DC Current Gain
hFE
VCE = 2V, IC = 1A
100
−
280
VCE = 2V, IC = 4A
30
−
−
VCE = 5V, IC = 1A
−
20
−
MHz
IC = 5A, IB = 10mA
−
−
0.4
V
−
−
0.5
V
90
−
−
V
Collector−Emitter Breakdown Voltage V(BR)CEO IC = 1mA, RBE = 
80
−
−
V
Emitter−Base Breakdown Voltage
6
−
−
V
Gain−Bandwidth Product
Collector−Emitter Saturation Voltage
NTE2570
fT
VCE(sat)
NTE2571
Collector−Base Breakdown Voltage
V(BR)CBO IC = 1mA, IE = 0
V(BR)EBO IC = 1mA, IC = 0
Rev. 6−15
Electrical Characteristics (Cont’d): (TA = +25C unless otherwise specified)
Parameter
Symbol
Turn−On Time
NTE2570
ton
VCC = 50V, VBE = −5V,
10IB1 = −10IB2 = IC = 2A,
Pulse Width = 20s
Duty Cycle  1%
NTE2571
Storage Time
NTE2570
Test Conditions
tstg
NTE2571
Fall Time
NTE2570
tf
NTE2571
Min
Typ
Max
Unit
−
0.1
−
s
−
0.2
−
s
−
1.6
−
s
−
0.7
−
s
−
0.4
−
s
−
0.2
−
s
Note 1. For NTE2571, the polarity is reversed.
.402 (10.2) Max
.173 (4.4) Max
.224 (5.7) Max
.122 (3.1)
Dia
.114 (2.9) Max
.295
(7.5)
.165
(4.2)
.669
(17.0)
Max
B
C
E
.531
(13.5)
Min
.100 (2.54)
.059 (1.5) Max
NOTE: Tab is isolated