270

NTE270 (NPN) & NTE271 (PNP)
Silicon Complementary Transistors
Darlington Power Amp, Switch
TO−3PN Type Package
Description:
The NTE270 (NPN) and NTE271 (PNP) are silicon Darlington complementary power transistors in
a TO−3PN type package designed for general purpose amplifier and low frequency switching applications.
Features:
D High DC Current Gain: hFE = 1000 Min @ IC = 5A, VCE = 4V
D Collector−Emitter Sustaining Voltage: VCEO(sus) = 100V Min @ 30mA
D Monolithic Construction with Built−In Base−Emitter Shunt Resistor
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Emitter−Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Total Device Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125W
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0C/W
Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35.7C/W
Note 1. Pulse Width = 5ms, Duty Cycle  10%.
Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
100
−
−
V
OFF Characteristics
Collector−Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
VCEO(sus) IC = 30mA, IB = 0, Note 2
ICEO
VCE = 50V, IB = 0
−
−
2.0
mA
ICBO
VCB = 100V, IE = 0
−
−
1.0
mA
IEBO
VBE = 5V
−
−
2.0
mA
Note 2. Pulse Test: Pulse Width = 300s, Duty Cycle  2%.
Rev. 2−15
Electrical Characteristics (Cont’d): (TC = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
IC = 5A, VCE = 4V
1000
−
−
IC = 10A, VCE = 4V
500
−
−
IC = 5A, IB = 10mA
−
−
2.0
V
IC = 10A, IB = 40mA
−
−
3.0
V
IC = 10A, IB = 40mA
−
−
3.5
V
VCC = 30V, IC = 5A,
IB = 20mA, Duty Cycle  2%,
IB1 = IB2, RC & RB Varied,
TJ = +25C
−
0.15
−
s
−
0.55
−
s
−
2.5
−
s
−
2.5
−
s
ON Characteristics (Note 2)
DC Current Gain
hFE
Collector−Emitter Saturation Voltage
Base−Emitter Saturation Voltage
VCE(sat)
VBE(sat)
Switching Characteristics (Resistive Load)
Delay Time
td
Rise Time
tr
Storage Time
ts
Fall Time
tf
Note 2. Pulse Test: Pulse Width = 300s, Duty Cycle  2%.
NTE270
NTE271
C
C
B
B
E
E
.614 (15.6)
.189 (4.8)
.787
(20.0)
.590
(15.0)
.138
(3.5)
Dia
.889
(22.6)
B
.215 (5.45)
C
E