NTE2515 (NPN) & NTE2516 (PNP) Silicon Complementary Transistors High Current Switch Features: D Low Collector Emitter Saturation Voltage D High Gain−Bandwidth Product D Excellent Linearity of hFE D Fast Switching Time Applications: D Display Drivers D High Speed Inverters D Converters Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V Collector Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Emitter Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Collector Power Dissipation, PC TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2W TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +150°C Note 1. NTE2516 is a discontinued device and no longer available. Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current ICBO VCB = 100V, IE = 0 − − 1.0 μA Emitter Cutoff Current IEBO VEB = 4V, IC = 0 − − 1.0 μA DC Current Gain hFE VCE = 5V, IC = 500mA 140 − 240 VCE = 5V, IC = 3A 40 − − VCE = 10V, IC = 500mA − 180 − MHz − 130 − MHz Gain−Bandwidth Product NTE2515 NTE2516 fT Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Symbol Output Capacitance NTE2515 Cob Test Conditions VCB = 10V, f = 1MHz NTE2516 Collector Emitter Saturation Voltage NTE2515 VCE(sat) IC = 2A, IB = 200mA NTE2516 Base Emitter Saturation Voltage VBE(sat) IC = 2A, IB = 200mA Min Typ Max Unit − 40 − pF − 65 − pF − 150 400 mV − 200 500 mV − 0.9 1.2 V Collector Base Breakdown Voltage V(BR)CBO IC = 10μA, IE = 0 120 − − V Collector Emitter Breakdown Voltage V(BR)CEO IC = 1mA, RBE = ∞ 100 − − V Emitter Base Breakdown Voltage V(BR)EBO IE = 10μA, IC = 0 6 − − V − 100 − ns − 900 − ns − 800 − ns − 50 − ns Turn−On Time ton Storage Time NTE2515 tstg VCC = 25V, VBE = −5V, 10IB1 = −10I 10IB2 = IC = 2A, 2A Pulse Width = 20μs, Duty Cycle ≤ 1%, Note 2 NTE2516 Fall Time tf Note 2. For NTE2516, the polarity is reversed. .315 (8.0) .106 (2.7) .433 (11.0) E C B .610 (15.5) .094 (2.4)