NTE2528 (NPN) & NTE2529 (PNP) Silicon Complementary Transistors High Voltage Switch TO251 Features: D High Voltage and High Current Capacity D Fast Switching Time D TO251 Type Package Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180V Collector Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V Emitter Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A Pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5A Collector Power Dissipation, PC TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +150°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current ICBO VCB = 120V, IE = 0 − − 1.0 μA Emitter Cutoff Current IEBO VEB = 4V, IC = 0 − − 1.0 μA DC Current Gain hFE VCE = 5V, IC = 100mA 100 − 400 VCE = 5V, IC = 10A 80 − − VCE = 10V, IC = 50mA − 120 − MHz VCB = 10V, f = 1MHz − 12 − pF − 22 − pF − 0.13 0.5 V − 0.2 0.45 V Gain−Bandwidth Product Output Capacitance NTE2528 fT Cob NTE2529 Collector−Emitter Saturation Voltage NTE2528 NTE2529 VCE(sat) IC = 500mA, IB = 50mA Rev. 8−10 Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Base−Emitter Saturation Voltage Symbol Test Conditions VBE(sat) IC = 500mA, IB = 50mA Min Typ Max Unit − 0.85 1.2 V Collector−Base Breakdown Voltage V(BR)CBO IC = 10μA, IE = 0 180 − − V Collector−Emitter Breakdown Voltage V(BR)CEO IC = 1mA, RBE = ∞ 160 − − V Emitter−Base Breakdown Voltage V(BR)EBO IE = 10μA, IC = 0 6 − − V − 60 − ns − 1.2 − ns − 0.7 − ns − 80 − ns − 50 − ns Turn−On Time ton Storage Time NTE2528 tstg VCC = 100V, VBE = −5V, 10IB1 = −10IB2 = IC = 700mA, Pulse Width = 20μs, Duty Cycle ≤ 1%, Note 1 NTE2529 Fall Time NTE2528 tf NTE2529 Note 1. For NTE2529, the polarity is reversed. .256 (6.5) .090 (2.3) .002 (0.5) .197 (5.0) .059 (1.5) C .275 (7.0) B C E .295 (7.5) .002(0.5) .090 (2.3)