99

NTE99
Silicon NPN Transistor
Darlington w/Base−Emitter Speed−up Diode
TO−3 Type Package
Description:
The NTE99 is a silicon NPN Darlington transistor in a TO3 type package designed for high−voltage,
high−speed, power switching in inductive circuits where fall time is critical. This device is particularly
suited for line−operated switchmode applications.
Applications:
D Switching Regulators
D Motor Controls
D Inverters
D Solenoid and Relay Drivers
Features:
D Fast Turn−Off Times:
1.0s (max) Inductive Crossover Time − 20 Amps
2.5s (max) Inductive Storage Time − 20 Amps
D Operating Temperature Range: −65 to +200C
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Collector−Emitter Voltage, VCEV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
Emitter−Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75A
Base Current, IB
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Total Power Dissipation, PD
TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250W
Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.43W/C
TC = +100C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 143W
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.7C/W
Maximum Lead Temperature (During Soldering, 1/8” from case for 5sec), TL . . . . . . . . . . . . +275C
Note 1. Pulse Test: Pulse Width = 5ms, Duty Cycle  10%.
Rev. 3−16
Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
400
−
−
V
OFF Characteristics (Note 2)
Collector−Emitter Sustaining Voltage
VCEO(sus) IC = 100mA, IB = 0, Vclamp = 400V
Collector Cutoff Current
ICEV
VCEV = 600V, VBE(off) = 1.5V
−
−
0.25
mA
Emitter Cutoff Current
IEBO
VBE = 2V, IC = 0
−
−
350
mA
hFE
IC = 20A, VCE = 5V
25
−
−
IC = 40A, VCE = 5V
10
−
−
IC = 20A, IB = 1A
−
−
2.2
V
IC = 50A, IB = 10A
−
−
5.0
V
VBE(sat)
IC = 20A, IB = 1A
−
−
2.75
V
Vf
IF = 20A, Note 3
−
2.5
5.0
V
VCB = 10V, IE = 0, ftest = 100kHz
−
−
750
pF
VCC = 250V, IC = 20A,
IB1 = 1A, VBE(off) = 5V,
tp = 25s, Duty Cycle  2%
−
0.14
0.3
s
−
0.3
1.0
s
−
0.8
2.5
s
−
0.3
1.0
s
−
1.0
2.5
s
−
0.36
1.0
s
ON Characteristics (Note 2)
DC Current Gain
Collector−Emitter Saturation Voltage
Base−Emitter Saturation Voltage
Diode Forward Voltage
VCE(sat)
Dynamic Characteristic
Output Capacitance
Cob
Switching Characteristics
Resistive Load
Delay Time
td
Rise Time
tr
Storage Time
ts
Fall Time
tf
Inductive Load, Clamped
Storage Time
tsv
Crossover Time
tc
IC = 20A(pk), Vclamp = 250V,
IB1 = 1A, VBE(off) = 5V
Note 2. Pulse Test: Pulse Widtg = 300s, Duty Cycle  2%.
Note 3. The internal Collector−to−Emitter diode can eliminate the need for an external diode to
clamp inductive loads. Tests have shown that the Forward Recovery Voltage (Vf) of this
diode is comparable to that of typical fast recovery rectifiers.
Circuit Outline
C
B
[ 50
[8
E
.135 (3.45) Max
.350 (8.89)
.875 (22.2)
Dia Max
Seating
Plane
.312 (7.93) Min
Emitter
.060 (1.52)
1.187 (30.16)
.665
(16.9)
.215 (5.45)
.156 (3.96) Dia
(2 Holes)
.430
(10.92)
.188 (4.8) R Max
Base
.525 (13.35) R Max
Collector/Case