2336

NTE2336
Silicon NPN Transistor
Darlington Switch w/Internal Damper
& Zener Diode
TO−220 Full Pack
Features:
D 60V Zener Diode Built−In Between Collector and Base
D Low Fluctuation in Breakdown Voltages
D High Energy Handling Capability
D High Speed Switching
Absolute Maximum Ratings: (TC = +25C unless otherwise specified)
Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 10V
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 10V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Collector Power Dissipation (TC = +25C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45W
Collector Power Dissipation (TA = +25C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C
Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
ICBO
VCB = 50V, IE = 0
−
−
100
A
Emitter Cutoff Current
IEBO
VEB = 7V, IC = 0
−
−
2
mA
Collector−Emitter Voltage
VCEO
IC = 5mA, IB = 0
50
−
70
V
VCE = 3V, IC = 4A
2000
−
5000
VCE = 3V, IC = 8A
500
−
−
DC Current Gain
hFE
Collector−Emitter Saturation Voltage
VCE(sat)
IC = 4A, IB = 8mA
−
−
1.5
V
Base−Emitter Saturation Voltage
VBE(sat)
IC = 4A, IB = 8mA
−
−
2.0
V
VCE = 10V, IC = 500mA, f = 1MHz
−
20
−
MHz
Transition Frequency
fT
Rev. 6−15
Electrical Characteristics (Cont’d): (TC = +25C unless otherwise specified)
Parameter
Symbol
Turn−On Time
ton
Storage Time
tstg
Fall Time
Test Conditions
VCC = 50V, IC = 4A,
IB1 = 8mA, IB2 = −8mA
tf
Energy Handling Capacity
Es/b
IC = 1A, L = 100mH, RBE = 100
Min
Typ
Max
Unit
−
0.5
−
s
−
4
−
s
−
1
−
s
50
−
−
mJ
C
B
E
.402 (10.2) Max
.173 (4.4) Max
.224 (5.7) Max
.122 (3.1)
Dia
.114 (2.9) Max
.295
(7.5)
.165
(4.2)
.669
(17.0)
Max
B
C
E
.531
(13.5)
Min
.100 (2.54)
.059 (1.5) Max
NOTE: Tab is isolated