2540

NTE2540
Silicon NPN Transistor
Darlington, High Voltage Switch
TO−220 Full Pack
Features:
D High DC Current Gain: hFE = 600 Min (VCE = 2V, IC = 2A)
D Monolithic Construction w/Built−In Base−Emitter Shunt Resistor
Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
Collector Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Emitter Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A
Base Current. IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Collector Power Dissipation, PC
TA = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
Collector Cutoff Current
ICBO
VCB = 600V, IE = 0
−
−
0.5
mA
Emitter Cutoff Current
IEBO
VEB = 5V, IC = 0
−
−
3
mA
400
−
−
V
VCE = 2V, IC = 2A
600
−
−
VCE = 2V, IC = 4A
100
−
−
Collector−Emitter Breakdown Voltage
DC Current Gain
V(BR)CEO IC = 10mA, IB = 0
hFE
Collector−Emitter Saturation Voltage
VCE(sat)
IC = 4A, IB = 40mA
−
−
2.0
V
Base−Emitter Saturation Voltage
VBE(sat)
IC = 4A, IB = 40mA
−
−
2.5
V
IE = 4A, IB = 0
−
−
3.0
V
Emitter−Collector Forward Voltage
VECF
Collector Output Capacitance
Cob
VCB = 50V, IE = 0, f = 1MHz
−
35
−
pF
Turn−On Time
ton
−
1
−
s
Storage Time
tstg
VCC = 100V,
IB1 = −IB2 = 40mA,
Duty Cycle  1%
−
8
−
s
−
5
−
s
Fall Time
tf
Rev. 6−15
Darlington Internal Schematic
C
B
E
.402 (10.2) Max
.224 (5.7) Max
.122 (3.1)
Dia
.295
(7.5)
.165
(4.2)
.669
(17.0)
Max
B
C
E
.531
(13.5)
Min
.100 (2.54)
.059 (1.5) Max
.173 (4.4)
Max
.114 (2.9)
Max