NTE454 MOSFET, N−Ch, Dual Gate, TV UHF/RF Amp, Gate Protected TO72 Type Package Description: The NTE454 is a depletion mode dual gate MOSFET transistor designed for VHF amplifier and mixer applications. Features: D Low Reverse Transfer Capacitance − Crss = 0.03pf (Max) D High Forward Transfer Admittance − |yfe| = 0−20 mmhos D Diode Protected Gates D G2 G1 S, Case Absolute Maximum Ratings: Drain Source Voltage, VDSX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20Vdc Drain−Gate Voltage, VDG1, VDG2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30Vdc Gate Current, IG1, IG2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +10mAdc Drain Current−Continuous, ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60mAdc Total Power Dissipation (TA = +255C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360mW Derate above 255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4mW/5C Total Power Dissipation (TC = +255C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2Watt Derate above 255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.0mW/5C Storage Channel Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +2005C Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +1755C Lead Temperature, 1/16” from Seated Surface for 10 Seconds, TL . . . . . . . . . . . . . . . . . . . . . +3005C Rev. 10−13 Electrical Characteristics: (TA = 255C unless otherwise noted) Characteristics Symbol Test Conditions Min Typ Max Unit 20 − − Vdc OFF CHARACTERISTICS Drain−Source Breakdown Voltage V(BR)DSX ID = 103Adc, V5 = 0, VGIS = VG25 = 5.0Vdc Gate 1= Source Breakdown Voltage (Note 1) V(BR)G1SO IG1 = +10mAdc, VGIS = VDS = 0 +6.0 +12 +30 Vdc Gate 2−Source Breakdown Voltage (Note 1) V(BR)G2SO IG2 = +10mAdc, VG15 = VD5 = 0 +5.0 +12 +30 Vdc Gate 1 to Source Cutoff Voltage VGIS(off) VDS = 15Vdc, VG2S = 4.0Vdc, ID = 203Adc −0.5 −1.5 −5.0 Vdc Gate 2 to Source Cutoff Voltage VG2S(off) VDS = 15Vdc, VG15 = 0, ID = 203Adc −0.2 −1.4 −5.0 Vdc VGIS = +5.0Vdc, VG2S = VDS = 0 − +0.04 +10 nAdc VG2S = −5.0Vdc, VG2S = VDS = 0, TA = 1505C − − −10 3Adc VG2S = +5.0Vdc, VGIS = VDS = 0 − +0.05 +10 nAdc VG2S = −5.0Vdc, VGIS = VDS = 0, TA = 1505C − − −10 3Adc VDS = 15Vdc, VGIS = 0, VG25 = 4.0Vdc 6.0 13 30 mAdc Gate 1 Leakage Current IG1SS Gate 2 Leakage Current IG2SS ON CHARACTERISTICS Zero−Gate Voltage Drain Current (Note 2) IDSS SMALL−SIGNAL CHARACTERISTICS Forward Transfer Admittance (Note 3) |yfe| VDS = 15Vdc, VG2S = 4.0Vdc, VGIS = 0, f = 1.0kHZ 8.0 12.8 20 mmhos Input Capacitance Ciss VDS = 15Vdc, VG2S = 4.0Vdc, ID = IDSS, f = 1.0MHZ − 3.3 − pF Output Capacitance Coss VDS = 15Vdc, VG2S = 4.0Vdc, ID = IDSS, f = 1.0MHZ − 1.7 − pF Reverse Transfer Capacitance Crss VDS = 15Vdc, VG2S = 4.0Vdc, ID = 10mAdc, f = 1.0MHZ 0.005 0.014 0.03 pF Noise Figure NF VDD = 18Vdc, VGG = 7.0Vdc, f = 200MHZ − 1.8 4.5 dB Common Source Power Gain Gps VDD = 18Vdc, VGG = 7.0Vdc, f = 200MHZ 15 20 25 dB Bandwidth BW VDD = 18Vdc, VGG = 7.0Vdc, f = 200MHZ 5.0 − 9.0 MHZ VGG(GC) VDD = 18Vdc, +Gps = −30dB, f = 200MHZ 0 −1.0 −3.0 Vdc FUNCTIONAL CHARACTERISTICS Gain Control Gate Supply Voltage (Note 4) Note 1. All gate breakdown voltages are measured while the device is conducting rated gate current. This ensures that the gate−voltage limiting network is functioning properly. Note 2. Pulse Test: Pulse Width = 3003s, Duty Cycle 3 2.0%. Note 3. This parameter must be measured with bias voltages supplied for less than 6 seconds to avoid overheating. Note 4. +Gps is defined as the change in Gpe from the values at VGG = 7.0V power gain conversion. .220 (5.58) Dia .185 (4.7) Dia .190 (4.82) .030 (.762) .500 (12.7) Min .018 (0.45) Dia Gate 2 Drain Gate 1 455 Source/Case .040 (1.02)