NTE455 N−Channel Silicon Dual−Gate MOS Field Effect Transistor (MOSFET) Description: The NTE455 is an N−Channel silicon dual−gate MOSFET designed for use as an RF amplifier in UHF TV tuners. This device is especially recommended for use in half wave length resonator type tuners. Features: D Low Reverse Transfer Capacitance: Crss = 0.02pF Typ D High Power Gain: Gps = 18dB Typ D Low Noise Figure: NF = 3.8dB Typ D G2 S, Case G1 Absolute Maximum Ratings: (TA = +25 C unless otherwise specified) Drain−Source Voltage, VDSX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Gate1−Source Voltage, VG1S . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . m10V Gate2−Source Voltage, VG2S . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . m10V Drain Current, ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25mA Total Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW Maximum Channel Temperature, Tch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125 C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +125 C Electrical Characteristics: (TA = +25 C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Zero−Gate Voltage Drain Current IDSS VDS = 10V, VG2S = 4V, VG1S = 0 0.5 − 8.0 mA Forward Transfer Admittance |Yfs| VDS = 10V, VG2S = 4V, ID = 10mA, f = 1kHz 18 22 − ms Input Capacitance Ciss VDS = 10V, VG2S = 4V, ID = 10mA, f = 1MHz 1.5 2.0 3.5 pF Output Capacitance Coss VDS = 10V, VG2S = 4V, ID = 10mA, f = 1MHz 0.5 1.1 1.5 pF Reverse Transfer Capacitance Crss VDS = 10V, VG2S = 4V, ID = 10mA, f = 1MHz − 0.02 0.03 pF Power Gain Gps VDS = 10V, VG2S = 4V, ID = 10mA, f = 900MHz 15 18 22 dB Noise Figure NF VDS = 10V, VG2S = 4V, ID = 10mA, f = 900MHz − 3.8 5.5 dB VG1S(off) VDS = 10V, VG2S = 4V, ID = 10mA − − 2.0 V VG2S(off) − − −0.7 V Gate−Source Cutoff Voltage Gate Reverse Current Drain−Source Breakdown Voltage IG1SS VDS = 0, VG1S = m10V, VG2S = 0 − − m20 nA IG2SS VDS = 0, VG2S = m10V, VG1S = 0 − − m20 nA BVDSX VG1S = VG2S = −2V, ID = 10mA 20 24 − V Rev. 10−13 G2 D G1 .157 (4.0) Typ S .393 (10.0) Min .098 (2.5) Max .039 (1.0) .007 (0.20) Typ .027 (0.70) .157 (4.0) Dia Max