NTE456 N−Channel Silicon JFET General Purpose Amp, Switch TO72 Type Package Description: The NTE456 is an N−Channel junction silicon field−effect transistor in a TO72 type package designed for general purpose amplifier and switching applications. Absolute Maximum Ratings: Drain−Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Drain−Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Gate−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −30V Drain Current, ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15mA Total Device Dissipation (TA = +255C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW Derate Above 255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2mW/5C Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +1505C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −655C to +2005C Electrical Characteristics: (TA = +255C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit −30 − − V VGS= −15V, VDS = 0 − − −0.1 nA VGS= −15V, VDS = 0, TA = +1505C − − −100 nA VGS(off) VDS = 15V, ID = 0.1nA − − −6 V VGS VDS = 15V, ID = 200 A −1.0 − −5.0 V Zero−Gate−Voltage Drain Current IDSS VDS = 15V, VGS = 0 2.0 − 6.0 mA Static Drain−Source On Resistance rDS(on) − 400 − 5 OFF Characteristics Gate−Source Breakdown Voltage Gate Reverse Current Gate−Source Cutoff Voltage Gate−Source Voltage V(BR)GSS VDS = 0, IG = −10 A IGSS ON Characteristics VDS = 0, VGS = 0 Rev. 10−13 Electrical Characteristics (Cont’d): (TA = +255C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 2000 − 5000 mhos Small−Signal Characteristics Forward Transfer Admittance Common Source |yfs| VDS = 15V, VGS = 0, f = 1kHz, Note 1 Output Admittance Common Source |yos| VDS = 15V, VGS = 0, f = 1kHz − − 20 mhos Input Capacitance Ciss VDS = 15V, VGS = 0, f = 1kHz − 4.5 6.0 pF Reverse Transfer Capacitance Crss VDS = 15V, VGS = 0, f = 1kHz − 1.2 2.0 pF Common−Source Output Capacitance Cosp VDS = 15V, VGS = 0, f = 30MHz − 1.5 − pF VDS = 15V, VGS = 0, RS = 1M5 , f = 100Hz − − 2.5 dB Functional Characteristics Noise Figure NF Note 1. Pulse test: Pulse Width = 630ms, Duty Cycle = 10%. .220 (5.58) Dia .185 (4.7) Dia .190 (4.82) .030 (.762) .500 (12.7) Min D G S .018 (0.45) Dia Source Drain Gate 455 Case .040 (1.02)